Publication Date:
2019-07-13
Description:
A well-collapse source-injection mode for SRAM SEU is demonstrated through TCAD modeling. The recovery of the SRAM s state is shown to be based upon the resistive path from the p+-sources in the SRAM to the well. Multiple cell upset patterns for direct charge collection and the well-collapse source-injection mechanisms are then predicted and compared to recent SRAM test data.
Keywords:
Electronics and Electrical Engineering
Type:
Nuclear and Space Radiation Effects Conference (NSREC); Jul 14, 2008 - Jul 18, 2008; Tucson, AZ; United States
Format:
application/pdf
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