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  • 1
    Electronic Resource
    Electronic Resource
    Step Polymerization with Unequal Reactivities of Functional Groups (1980)
    s.l. : American Chemical Society
    Macromolecules 13 (1980), S. 791-797 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma60076a004
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  • 2
    Electronic Resource
    Electronic Resource
    Heat transfer and material removal in pulsed excimer-laser-induced ablation: Pulsewidth dependence (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3052-3058 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The pulsewidth-dependent ablation of polyimide, poly(methylmethacrylate), poly (etheretherketone), poly(ethylene terepthalate), and poly(ethersulphone) exposed to 248 and 308 nm, nanosecond UV laser pulses was modeled assuming one-dimensional heat transfer and a published model [G. H. Pettit and R. Sauerbrey, Appl. Phys. A 56, 51 (1993)] for photon absorption. The polymers were assumed to degrade/ablate after reaching a threshold temperature determined either from published temperature calculations of the ablating surface or the ceiling temperature. Since heat transfer calculations suggest that this temperature is reached before the end of the laser pulse, it was assumed that the degraded/ablated material continues to attenuate the incoming laser energy for the remaining duration of the laser pulse. Since the fluence-dependent absorption coefficient of this degraded material is unknown, it was obtained by fitting the experimental pulsewidth dependent ablation rate data of Schmidt, Ihlemann, and Wolff-Rottke (unpublished). The resulting values are consistent with mass spectrometric analysis of the ablation products and with the absence or occurrence of incubation. The threshold fluences and ablation rates predicted by this model are in good agreement with reported literature values; however, the use of a well-defined threshold temperature in the model leads to a different limiting etch rate dependence on the fluence at the threshold.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357486
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  • 3
    Electronic Resource
    Electronic Resource
    Deposition of copper films on silicon substrates: Film purity and silicide formation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2326-2332 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deposition of copper films on silicon substrates by the radio-frequency plasma reduction of spin-coated copper formate films in hydrogen and oxygen plasma discharges has been investigated further. The atomic compositions of these films, determined by Auger electron and x-ray photoelectron spectroscopy, were found to be a strong function of the processing conditions, especially power density and temperature. Rutherford backscattering studies (RBS) of the silicon–copper interface revealed the formation of copper silicide at deposition temperatures that are nominally as low as 40 °C. The silicide formation was further investigated by depositing pure copper films on silicon substrates by thermal evaporation. The Cu/Si interface was analyzed before and after in situ annealing at 300 °C and 10−8 Torr and compared with the results for the plasma deposited films. RBS data show that diamondlike carbon films are excellent diffusion barriers between Si and Cu.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353137
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of inert gas dilution of 1,3 butadiene on plasma deposition of a-C:H films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2496-2504 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous hydrogenated carbon films (a-C:H) were deposited by the plasma decomposition of mixtures of 1,3 butadiene with different inert gas diluents (Ar, Ne, and He). Several characteristics of the plasma and the deposited films were investigated for deposition gas mixtures ranging in concentration from 0% to 90% of the diluent. Measurement of the optical emission from the plasma indicated the presence of the same dominant species from the hydrocarbon source (CH 430 nm system, and hydrogen Balmer lines) for all the mixtures containing the diluents, although the relative intensities were markedly different. The H*/H*2 and H*/CH* emission intensity ratios increased with the concentration of butadiene in argon- and neon-diluted mixtures while remaining relatively constant in butadiene/helium plasmas. Details of some the bonding configurations were determined from an analysis of the various IR-absorption bands. Film characterization included etch rate measurements in an oxygen plasma as well as the determination of the density and the optical band gap for different deposition gas mixtures. All the measurements suggest that, when the diluent concentration exceeds about 75%, the film structure undergoes a well-defined transition to a predominantly sp2 structure. The relation between the film properties and the deposition gas mixture and the reactive species present in the plasma is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353109
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  • 5
    Electronic Resource
    Electronic Resource
    Computationally simple model for multiphoton-induced chemical processes (1982)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 86 (1982), S. 3210-3217 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100213a028
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  • 6
    Electronic Resource
    Electronic Resource
    First quantum corrections to the second virial coefficient of a Stockmayer gas (1970)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 74 (1970), S. 1113-1115 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100700a026
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  • 7
    Electronic Resource
    Electronic Resource
    Structural-modification mechanism for polyimide-doped poly(tetrafluoroethylene) at subthreshold fluences using 248 nm radiation (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3049-3051 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-photon excimer laser ablation of neat poly(tetrafluoroethylene) (PTFE) is not observed at emissions in the "quartz'' UV, i.e., from about 190–380 nm. However, it has been successfully demonstrated that, when the fluoropolymer is doped with small quantities of polyimide (PI), ablation in the quartz UV, e.g., at 248 and 308 nm and pulse widths of about 25 ns, is readily achieved. When PI-PTFE blends are exposed to subthreshold fluences, considerable changes in surface topography occur although clearly defined structures, e.g., pits, are not formed. Using photoacoustic infrared spectroscopy to evaluate surface and bulk chemical changes to blends exposed to subthreshold excimer laser fluences, 〈100 mJ/cm2, it is shown that PI (1) is distributed throughout the bulk and resides at the surface and (2) is selectively absorbing the high-energy photons and as a result being preferentially removed from the surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357485
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  • 8
    Electronic Resource
    Electronic Resource
    Excimer laser ablation of polyimide-doped poly(tetrafluoroethylene) at 248 and 308 nm (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5972-5980 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental data on the 248 and 308 nm wavelength excimer laser ablation at poly(tetrafluoroethylene) doped with polymide (PI) are reported for a range of fluences and dopant concentrations. Threshold fluences were determined and a correlation was obtained between the dopant concentration and the threshold fluence. The threshold fluences and the limiting etch rates at high fluences decreased with increasing dopant concentration, and there is a minimum dopant concentration below which there is no ablation at both of the wavelengths. The side wall taper of the ablated holes increased with increasing dopant concentration. At subthreshold fluences, the polymer surface was modified with selective removal of PI from the polymer blend. The etch rates have been modeled using a two parameter thermal model to describe the etching process. The parameters obtained by fitting the data are qualitatively correlated to the dopant concentration and the measured limiting etch rates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355210
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  • 9
    Electronic Resource
    Electronic Resource
    Excimer laser induced ablation of polyetheretherketone, polyimide, and polytetrafluoroethylene (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 692-698 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: New experimental data on the photoablation rate of polyetheretherketone and Kapton film by 25 ns pulses of XeCl laser radiation are presented. The fluences used were in the range of 5–70 J/cm2. The etching rate increases with fluence up to about 50 J/cm2 and then saturates for both the polymers. The data can be described very well by the model proposed earlier by Srinivasan, Smrtic, and Babu (SSB), which includes both thermal and photochemical contributions to polymer ablation. This model is compared with that of Sauerbrey and Petit for describing the etch rate of polyimide with 308 nm laser pulses of various durations. It is also shown that the polytetrafluoroethylene ablation rate data of Kuper and Stuke obtained with 300 fs 248 nm laser pulses can also be described by the SSB model by modifying it to include the effects of nonlinear absorption.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351855
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  • 10
    Electronic Resource
    Electronic Resource
    Excimer laser etching of polymers (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3861-3867 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ablative decomposition of polyimide, poly(methylmethacrylate), and TNS2 photoresist at high excimer laser (ArF and KrF) fluences (〉1 J/cm2) is investigated. It is found that the mechanism of etching is both photochemical and thermal in nature at these fluences. A model, in which a thermal contribution to etching is added to the photochemical contribution derived from low fluence measurements, has been found to represent the experimental data satisfactorily. It is also shown that feature sizes as small as 0.4 μm can be delineated on polymeric materials in a self-developing manner using 193-nm laser pulses and contact-printing techniques.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336728
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