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  • 1
    Electronic Resource
    Electronic Resource
    Fluence Dependence of the Formation of Open-Volume Defects in Silicon After Ion Implantation (1997)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 255-257 (Sept. 1997), p. 472-474 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/02/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.255-257.472.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Measurements of spectral induced polarization for environmental purposes (1996)
    Springer
    Environmental geology 27 (1996), S. 329-334 
    Details
    ISSN: 1432-0495
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences
    Notes: Abstract Hydraulic permeability is one of the most important parameters for the evaluation of sediments relevant to environmental and hydrogeological problems. Up to now, permeability could be determined only by time-consuming and expensive methods like pumping tests or sampling and laboratory investigations. The results are confined to few locations, and they depend on the scale of the investigation method. Measurements on rock samples in a laboratory can differ significantly from well test results. Geophysical measurements are performed on different scales from high resolution measurements in boreholes up to large-scale soundings. Variations in permeability are mainly caused by varying grain size and by changes in porosity. A decrease of average grain diameter results in an increasing internal surface area. Petrophysical investigations have shown a reliable correlation between the imaginary part of electrical conductivity and the porespace-related internal surface. The formation resistivity factor, which is related to porosity, can be determined by geoelectrical measurements if the electrical conductivity of the pore fluid is known. The internal surface area and the formation factor are the only two parameters used by a Kozeny-Carman-like equation to evaluate the permeability or hydraulic conductivity for the investigated representative volume. Complex electrical conductivity is determined by measurements of induced polarization in the frequency domain. Frequencies below 10 Hz are used to avoid electromagnetic coupling. The permeability values determined by electrical measurements in boreholes can well be compared with those derived from the grain size distribution of samples. The same algorithm can be applied to evaluate the hydraulic conductivity of subsurface layers by complex resistivity soundings. The high sensitivity of the imaginary conductivity component to changes at the internal surface may be used as an indicator for contaminations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00766702
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  • 3
    Electronic Resource
    Electronic Resource
    The Sloc Positron Beam Technique – A Unique Tool for the Study of Vacancy-Type Defects in Semiconductors (1998)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 63-64 (Dec. 1998), p. 291-300 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.63-64.291.pdf
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  • 4
    Electronic Resource
    Electronic Resource
    CONTAMINATION INDICATIONS DERIVED FROM ELECTRICAL PROPERTIES IN THE LOW FREQUENCY RANGE (1993)
    Oxford, UK : Blackwell Publishing Ltd
    Geophysical prospecting 41 (1993), S. 0 
    Details
    ISSN: 1365-2478
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences , Physics
    Notes: Electrical measurements are an important and integrated component of geophysical investigations connected with environmental problems. As a result of an analysis of the electrical conductivity, basic experiments on sandstones at frequencies below 10 kHz show that the complex behaviour of conductivity is caused exclusively by a complex interface conductivity. Its value is determined mainly by the internal rock interface to porosity ratio, the composition of the pore fluid and connected matrix-water interactions resulting in a specific microstructure of the interface. Therefore, it can be expected that the interface region of a soil or rock material is very sensitive to changes in composition caused by contamination. Contaminated sandstone and clay samples were investigated using a low-frequency measurement system. The investigations are directed at the influence of different contaminants and their concentration. Results show that the complex electrical conductivity (real and imaginary parts) is influenced by properties of the pore-filling contaminant. This influence results in a change of the level of both parts and the shape of their frequency dependence. The imaginary part in particular seems to provide important secondary information; in some cases this part alone allows a differentiation of the various contaminants. The different behaviour of various rock types shows that the effects observed are the result of interactions between pore fluid properties and the internal pore surface structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2478.1993.tb00566.x
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  • 5
    Electronic Resource
    Electronic Resource
    Defect identification in GaAs grown at low temperatures by positron annihilation (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8368-8379 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use positron annihilation to study vacancy defects in GaAs grown at low temperatures (LT–GaAs). The vacancies in as-grown LT–GaAs can be identified to be Ga monovacancies, VGa, according to their positron lifetime and annihilation momentum distribution. The charge state of the vacancies is neutral. This is ascribed to the presence of positively charged AsGa+ antisite defects in vicinity to the vacancies. Theoretical calculations of the annihilation parameters show that this assignment is consistent with the data. The density of VGa is related to the growth stoichiometry in LT–GaAs, i.e., it increases with the As/Ga beam equivalent pressure (BEP) and saturates at 2×1018 cm−3 for a BEP≥20 and a low growth temperature of 200 °C. Annealing at 600 °C removes VGa. Instead, larger vacancy agglomerates with a size of approximately four vacancies are found. It will be shown that these vacancy clusters are associated with the As precipitates formed during annealing. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373549
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  • 6
    Electronic Resource
    Electronic Resource
    Impurity gettering by vacancy-type defects in high-energy ion-implanted silicon at Rp /2 (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3932-3934 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vacancy-type defects were studied after high-energy self-implantation of Si and subsequent rapid thermal annealing by means of a depth-resolution enhanced positron beam technique. Two different types of open-volume defects were found at a depth of Rp/2 and Rp, respectively. The defect type at Rp/2 is an agglomeration of point defects containing vacancies. This defect getters diffusing copper atoms. The vacancy-type defect observed in a depth of Rp could be connected to the interstitial loops formed there. The positron annihilation parameters suggest that this detected defect is not decorated by diffusing copper atoms. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1332814
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  • 7
    Electronic Resource
    Electronic Resource
    Determination of the defect depth profile after saw cutting of GaAs wafers measured by positron annihilation (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2255-2262 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Positron lifetime measurements and Doppler broadening spectroscopy using slow positrons were combined to investigate open-volume defects created by sawing wafers from GaAs ingots by a diamond saw cutter. It was found during step-by-step polishing that the depth distribution represents a wedgelike profile. The depth and the concentration of the defects introduced by the diamond saw depend on the advance of the saw blade. An isochronal annealing experiment was carried out to study the thermal stability of the observed defects. The positron lifetime of the dominant open-volume defect was estimated to be larger than 330 ps. It was concluded from this lifetime value and from the Doppler broadening parameters as well as from the annealing behavior that vacancy aggregates consisting of at least two vacancies are created by the sawing procedure. More extended defects such as microcracks were analyzed by scanning electron microscopy. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368291
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  • 8
    Electronic Resource
    Electronic Resource
    Taschenwörterbuch der botanischen Pflanzennamen (1967)
    Springer
    Journal of pest science 40 (1967), S. 15-15 
    Details
    ISSN: 1612-4766
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01873176
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  • 9
    Electronic Resource
    Electronic Resource
    Positron Beam Studies of Defects in Semiconductors (2001)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 363-365 (Apr. 2001), p. 404-408 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/05/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.363-365.404.pdf
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  • 10
    Electronic Resource
    Electronic Resource
    Positron Annihilation Studies of Subsurface Zones in Copper Created under Lubrication Conditions (2001)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 363-365 (Apr. 2001), p. 517-519 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/05/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.363-365.517.pdf
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