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  • 1
    Electronic Resource
    Electronic Resource
    The Griffiths theory of tricritical phase behavior and its application to a model microemulsion system (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 7167-7172 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The Griffiths theory is used to model the three-phase behavior of a microemulsion system composed of heptane, water, sodium dodecyl sulphate, butanol, and salt. It is shown that this particular system requires a Griffiths theory extended to (at least) the eighth power in the order parameter when that parameter is taken proportional to the oil-in-water concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.457333
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  • 2
    Electronic Resource
    Electronic Resource
    Drift mobilities and Hall scattering factors of holes in ultrathin Si1−xGex layers (0.3〈x〈0.4) grown on Si (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2016-2023 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sheet resistivity and Hall measurements have been performed on a series of p-type modulation-doped Si/Si1−xGex heterostructures. The structures were grown by a production-compatible atmospheric-pressure chemical-vapor deposition technique and all the epitaxial layers were lattice matched to the silicon substrates. A depleted-doping technique was used to supply the quantum well with holes, and this approach has enabled the transport properties of the SiGe layers to be characterized between 4.2 and 295 K. Measurements of the Hall scattering factor and drift mobility are reported for ultrathin, high-Ge content layers (0.3〈x〈0.4) with a range of hole densities up to 4×1012 cm−2. The drift mobilities are shown to be substantially and consistently higher than comparable mobilities reported for holes in Si/SiO2 inversion layers. A drift mobility of 460±20 cm2/V s was measured at 295 K for a 6 nm-thick Si0.65Ge0.35 layer. This is more than a factor of 2 greater than the equivalent Si inversion layer mobility and is comparable to the highest room-temperature mobilities reported for holes in fully strained Si/SiGe heterostructures. The Hall scattering factor is shown to be very dependent upon temperature and, at 295 K, very dependent upon the hole density. At 295 K the Hall scattering factor does not exhibit a strong dependence upon Ge content. The variation of the hole drift mobility with temperature has been shown to fit a power dependence μ∼Tγ in the range 120–300 K. The γ values are consistent with simple acoustic phonon scattering theory, although a variation in γ with hole density is also observed, suggesting that a more rigorous theoretical treatment is required. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1305555
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  • 3
    Electronic Resource
    Electronic Resource
    Low-temperature chemical vapor deposition of epitaxial Si and SiGe layers at atmospheric pressure (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1286-1288 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In an effort to determine the low-temperature limit for the growth of Si and Si1−xGex epitaxial layers in an atmospheric-pressure chemical vapor deposition (CVD) reactor, good quality material has been obtained at temperatures down to 600 °C, using SiH2Cl2 and GeH4 in H2 ambient. Si/Si1−xGex/Si heteroepitaxial structures are of good crystalline quality as well, showing abrupt interfaces. The Si-growth rate enhancement, caused by the addition of GeH4 to the gas flow at low temperatures, turns into growth-rate inhibition at higher temperatures. In this experiment oxygen and water partial pressures are several orders of magnitude higher than in ultrahigh vacuum CVD, without causing noticeable negative effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104338
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  • 4
    Electronic Resource
    Electronic Resource
    Si/SiGe resonant-cavity photodiodes for optical storage applications (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1550-1552 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a resonant cavity photodiode with a Si/SiGe Bragg mirror grown by low temperature chemical vapor deposition suitable for short wavelength detection around 600–700 nm. The presence of Fabry-Pérot oscillations in the spectral response of the photodiode are indicative of its wavelength selectivity. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121111
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  • 5
    Electronic Resource
    Electronic Resource
    Characterization of epitaxial layers by the depth dependence of boron diffusivity (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1513-1515 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Differences in boron diffusivity have been used to characterize epitaxially grown silicon layers. After oxidation-enhanced diffusion of boron spikes, a decrease in boron diffusivity with increasing depth is observed in epitaxial silicon layers grown by molecular beam epitaxy and fast gas switching vapor deposition, in contrast to layers grown by low-temperature chemical vapor deposition. The reduced boron diffusivity is thought to be caused by an oversaturation of vacancy defects, acting as interstitial traps, suppressing the diffusion of boron.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107533
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  • 6
    Electronic Resource
    Electronic Resource
    New technique for measuring two-dimensional oxidation-enhanced diffusion in silicon at low temperatures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2130-2132 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, a new high-resolution technique is presented for determining the lateral extent of oxidation-enhanced diffusion (OED). A periodic grid of lines and spacings is used as an oxidation mask. It will be shown that a simple secondary ion mass spectroscopy measurement permits the extraction of parameters in the lateral direction with a resolution which can be as good as 10 nm. The lateral extent of OED is depth dependent, consistent with a physical model of point-defect recombination at the Si/SiO2 interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111706
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of heating ramp rates on transient enhanced diffusion in ion-implanted silicon (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 889-891 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron marker-layer structures have been used to analyze the heating ramp-rate dependence of transient enhanced dopant diffusion (TED) during rapid thermal annealing of Si implantation damage. The study uses short anneals with heating ramp rates in the range 0.1–350 °C/s, and peak temperatures in the range 900–1100 °C. Increasing the ramp rate is found to reduce the amount of profile broadening caused by TED, as well as reducing the smaller amount of normal "thermal-equilibrium" diffusion which is related to thermal budget. The results show why high ramp rates lead to improved B-implant activation and junction-depth control in Si devices. An Ostwald ripening model of interstitial-cluster evolution describes the detailed trends in the data and predicts further improvements in the case of ultrarapid annealing. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1347397
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  • 8
    Electronic Resource
    Electronic Resource
    Differential Rejection of Neurones and Neuroglia in Canine Cardiac Allografts (1970)
    [s.l.] : Nature Publishing Group
    Nature 228 (1970), S. 69-71 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] As part of a study of the effects of immunosuppressive agents on the survival of canine cardiac allografts, we have noted the presence of histologically normal neurones in ganglia in proximity to both the sino-atrial and atrio-ventricular nodes in transplanted hearts. We used the technique of ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/228069a0
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  • 9
    Electronic Resource
    Electronic Resource
    Renal Transplantation in Cattle Twins (1967)
    [s.l.] : Nature Publishing Group
    Nature 215 (1967), S. 741-742 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The kidney, usually the left, was transplanted to the left side of the neck after perfusion with heparin and procaine containing cold (4 C) Hartmann solution. The vascular anastomoses were completed within 30 min and the ureter was anastomosed to the oesophagus. In each animal only one of its own ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/215741a0
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  • 10
    Electronic Resource
    Electronic Resource
    Species Distribution of Gastrointestinal Antigens (1966)
    [s.l.] : Nature Publishing Group
    Nature 210 (1966), S. 960-962 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The investigation was conducted on separate tissue blocks from stomach, small intestine and large intestine taken usually within 1 h of death from a large variety of mammals, as listed in Table 1, and other vertebrate species. Blocks, snap frozen in liquid nitrogen-isopentane freezing mixture at ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/210960a0
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