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  • 1
    Electronic Resource
    Electronic Resource
    The optical nonlinearity and structure for a PbO, TiO2, SiO2, and K2O quaternary glass system (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3756-3760 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nonlinear refractive index n2 of a PbO, TiO2, SiO2, and K2O quaternary glass system measured by the laser beam longitudinal scanning (Z-SCAN) method was found to be 7.72×10−19 m2/W and it was strongly correlated with the presence of more polarizable ions rather than the nonbridging oxygen content. The structural units of the present glass system has been studied by infrared (IR), Raman spectra, and x-ray photoelectron spectroscopy (XPS) techniques. The results indicate that the IR absorption band at 1020 cm−1 and the Raman peak at 1100 cm−1 attributed to the stretching vibration of the Si—O—Si bond shift to a lower wave number with an increase of the relative content of K2O. The XPS O1s spectra are decomposed into two main components, which reveal that oxygen atoms of the glass network occur in both bridging and nonbridging oxygen with binding energies of 531.77±0.30 eV and 530.17±0.40 eV, respectively. Si4+ ions are in the form of SiO4 to form the glass network, Ti4+ ions are dual 4- and 6-coordinated with oxygen ions, K+ ions act as network modifiers, and Pb2+ as network modifiers at a low content of PbO, but are network formers at high content. A structural model has been proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356048
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  • 2
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy observations of ferroelectric domains in the tetragonal Pb(Ni1/3Nb2/3)O3–PbZrO3–PbTiO3 ceramics modified by bismuth and zinc (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5079-5082 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric domains of the tetragonal (Pb0.985Bi0.01)(Ni1/4Zn1/12Nb2/3)0.2(ZrσTi1−σ)0.8O3 (σ=0.30 and 0.40) ceramics were investigated by transmission electron microscopy and electron diffraction. It was observed that the 90° macrodomains displayed the shape of simple lamella twinning, and that the δ-fringe contrast was frequently observed within these configurations of 90° domains. The 180° domain walls with zigzag structure between 90° domain walls were also observed. The formation sequences of the 90° and 180° domain structures were discussed in terms of energy minimization during the phase transition from cubic to tetragonal ferroelectric phase on cooling. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1362404
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  • 3
    Electronic Resource
    Electronic Resource
    Domain structures and planar defects in SrBi2Ta2O9 single crystals observed by transmission electron microscopy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 799-801 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, the domain structures and structural planar defects in SrBi2Ta2O9 (SBT) single crystals with (001) orientation were investigated by transmission electron microscopy. The 90° domain walls are identified by the 90° rotation relationship of the electron diffraction pattern about the [001] zone axis, and which exhibit irregular configurations. Antiphase boundaries (APBs) in SBT single crystals are also observed, which exhibit ribbon-like morphologies. Fourfold vertices formed by four APBs meeting together are observed as predominant singularities, and are explained by a four-state clock model, in which the four states are considered as the TaO6 octahedra tilting left, right, forward, or backward along the crystallographic directions. Some threefold vertices are also observed since both threefold and fourfold vertices are energetically allowed in the present model. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1347383
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  • 4
    Electronic Resource
    Electronic Resource
    Dissociation of grain boundary dislocations in SrBi2Ta2O9 ferroelectric thin films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1345-1347 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, the dissociation of grain boundary dislocations (GBDs) is reported in SrBi2Ta2O9 (SBT) ferroelectric thin films with c-axis orientation grown by pulsed-laser deposition on Pt/TiO2/SiO2/Si(100) substrates. Small-angle (8.2°) [001] tilt grain boundaries with a boundary plane close to the (110) plane exhibit partial GBDs separated by stacking faults. The dissociated grain-boundary structures have twice the number of GBDs and interdislocation core channel width smaller than that Frank's geometrical rule predicts. At the equilibrium, the repulsive elastic force between partial dislocations is balanced by an attractive force produced by the formation of a stacking fault between the partials. Based on this, the stacking fault energy is evaluated to be 0.27–0.29 J/m2. The relationship between the leakage current of SBT films and dissociation of GBDs is also discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1388866
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  • 5
    Electronic Resource
    Electronic Resource
    Epitaxial growth and planar dielectric properties of compositionally graded (Ba1−xSrx)TiO3 thin films prepared by pulsed-laser deposition (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3376-3378 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have heteroepitaxially deposited compositionally graded (Ba1−xSrx)TiO3 (BST) thin films with increasing x from 0.0 to 0.25 on (100)-oriented MgO substrates using pulsed-laser deposition. The compositional gradients along the depth in the graded films were characterized by Rutherford backscattering spectroscopy. By using surface interdigital electrodes, the planar dielectric response of epitaxial graded BST films was measured as a function of frequency, temperature, and dc applied voltage. At room temperature, the dielectric constant of the graded BST film was about 450 with a dielectric loss, tan δ of 0.007 at 100 kHz. Measurements varying the dc bias voltage showed hysteresis of the dielectric response and a tunability of 25% at an applied electric field of 80 kV/cm. The graded BST films undergo a diffuse phase transition with a broad and flat profile of the capacitance versus temperature. Such behavior of the dielectric response in graded BST films is attributed to the presence of the compositional and/or residual strain gradients in the epitaxial graded films. With such a graded structure, it is possible to a build a dielectric thin-film capacitor with a low-temperature dependence of the capacitor over a broad temperature regime. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1475367
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  • 6
    Electronic Resource
    Electronic Resource
    Origin of optical nonlinearity for PbO, TiO2, K2O, and SiO2 optical glasses (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 867-869 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nonlinear optical properties for the PbO, TiO2, K2O, and SiO2 system have been measured by the Z-scan method. The magnitude and sign of the nonlinear refractive index n2 were determined, as was the negative sign, which indicated a self-defocusing optical nonlinearity. Two optical absorption bands at 540 and 660 nm, respectively, are observed in the optical absorption spectra. The sources of the absorption bands are attributed to the 3d-shell electronic transitions of Ti3+ ions from the ground state to the excited states. The origin of the negative nonlinear refractive index was the contribution of resonant electronic transition processes, which can cancel the positive nonresonant refractive index that mainly resulted from the hyperpolarizabilities of the Pb–O and Ti–O pairs. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119672
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  • 7
    Electronic Resource
    Electronic Resource
    Erratum: "Dissociation of grain boundary dislocations in SrBi2Ta2O9 ferroelectric thin films" [Appl. Phys. Lett. 79, 1345 (2001)] (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2666-2666 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1412229
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  • 8
    Electronic Resource
    Electronic Resource
    Interdiffusion reaction in the PZT/PNN functionally gradient piezoelectric ceramic materials (1998)
    Springer
    Journal of materials science 33 (1998), S. 1023-1030 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The interfacial diffusion reaction between lead zirconate titanate (PZT) and lead nickel niobate (PbNi1/3Nb2/3O3:PNN) phases in the PZT/PNN functionally gradient piezoelectric ceramics were investigated as a function of the diffusion temperature and time, respectively. The ionic composition distribution profiles in the interdiffusion region were examined by electron probe microbeam analysis (EPMA). Based on a diffusion model of the overlapped diffusion solution from thin slab, the numerical simulation for the ionic composition distribution was carried out by computer, which was in agreement with the EPMA result. The diffusion coefficients for the Ni2+, Nb5+, Ti4+ and Zr4+ ions were determined, which were 33.8, 22.6, 10.8 and 9.9×10-12 m2 s-1, respectively. The apparent activation energies for these ions were 94.4, 171.7, 257.5 and 325.8 kJ mol-1, respectively. The differences in the ionic diffusion coefficients and apparent activation energies were discussed from the viewpoint of the crystal chemistry. © 1998 Chapman & Hall
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1004324214533
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  • 9
    Electronic Resource
    Electronic Resource
    EPMA and TEM investigations on the interdiffusion layer of the PNN/PZT functionally gradient piezoelectric ceramics (2000)
    Springer
    Journal of materials science 35 (2000), S. 1031-1036 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The compositional profile, distribution of the phases and the ordering behavior in the interdiffusion layer of the PNN/PZT functionally gradient piezoelectric ceramics have been investigated by electron probe microbeam analyses (EPMA) and transmission electron microscopy (TEM) respectively. The results show that the thickness of the interdiffusion layers (d) for Ni2+, Nb5+, Ti4+ and Zr4+ ions are ordered as dNi 2+ 〉 dNb 5+ 〉 dTi 4+ 〉 dZr 4+. It is demonstrated by TEM observation and selected area electron diffraction (SAED) patterns that a clear interface between the rhombohedral and pseudocubic phases exists in the interdiffusion layer. The SAED studies also reveal the presence of F spots along the [111] direction of the perovskite cubic unit cell. The origin of this superstructure is determined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1004783332166
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  • 10
    Electronic Resource
    Electronic Resource
    A functionally gradient piezoelectric actuator prepared by powder metallurgical process in PNN-PZ-PT system (1995)
    Springer
    Journal of materials science 14 (1995), S. 516-518 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00665920
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