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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nd-Fe-B as-cast alloys in the form of small ingots 4–5 mm thick and with composition Nd2.1Fe14B were transformed into high coercivity magnets using the hydrogenation disproportionation desorption (HDD) process without decrepitation of the blocks taking place. Magnetic measurements revealed that it was possible to produce blocks with coercivity of ∼780 kA m−1, remanence of ∼680 mT and a BHmax of ∼68 kJ m−3 (8.6 MGOe). The high coercivities in these samples were attributed to the disproportionation and subsequent recrystallization process. SEM metallographs of the samples processed at optimum temperature revealed an absence of the original large (∼200 μm) grains of Nd2Fe14B containing areas of free iron; instead an extremely fine grained, submicron, microstructure of single phase Nd2Fe14B grains was observed. In samples processed at temperatures higher than that found to be the optimum, larger Nd2Fe14B grains with extremely rectangular morphologies could be observed growing from surrounding submicron matrix grains. Domain patterns observed on these larger grains, using the Kerr effect, indicated that Nd2Fe14B matrix grains appear to grow predominantly with rectangular morphologies from the disproportionated material with the a and c crystal axis running parallel to the edges of the rectangle.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1295-1297 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Several versions of Mevva ion sources have been developed in our institute since 1988. It operates in a pulsed mode with a pulse length of 1.2 ms and a repetition rate of up to 50 pps. A time-averaged beam current of 10 or 50 mA has been extracted at 30–80 kV from Mevva IIA-H and Mevva IIB, respectively. In order to develop surface modification of materials by ion implantation we have constructed three kinds of Mevva ion source implantation systems. High dose (3–5×1017 cm−2) implantation with Ti, Ce, Y, and Ti+C, etc. has been carried out for improving the lifetime of metal cutting tools, relay contacts, dies, and some sophisticated components.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1263-1265 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The charge density and the charge state distribution of ions extracted from metal vapor vacuum arc ion source have been measured by single, double probe, and time of flight systems, and the ion beam density distributions near the extracting electrode have been measured with and without a cusped magnetic field in order to improve the performance of ion beams. The charge state distributions as a function for many operational cathode materials were investigated.
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Biochemistry 30 (1991), S. 2012-2017 
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2179-2181 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new approach of growing thick Ge layers on Si substrates by molecular beam epitaxy is presented. A 30–80 A(ring) thick Ge overlayer is first deposited on the Si(100) substrate at room temperature. By thermally annealing the sample to 300 or 500 °C for 10 min, the Ge atoms cluster into randomly distributed islands which would play a role in releasing the mismatch stress at the interface. The Ge film of 10 000 A(ring) thickness epitaxially grown on this surface at 550 °C shows a better crystalline quality than that grown by a conventional method. A full width at half maximum of 262 s for the Ge (400) x-ray diffraction peak has been achieved.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 488-490 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements are reported for x-ray diffraction topography (XRDT) images of implantation and superstructure details in an integrated circuit device investigated with the reflection method of line modified-asymmetric crystal topography (LM-ACT). The x-ray penetration depth and the micron grain size of thin-film nuclear emulsions used to record the diffraction images are shown to limit spatial resolution in the x-ray topographs. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4559-4561 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: With Bi3TiNbO9 (BTN) ferroelectric samples, in situ electrical-field-induced growth of ferroelectric thin films was demonstrated to control the films' microstructure and manipulate their ferroelectric properties. BTN films on Ti/SiO2/Si substrates were grown at a relatively low temperature (650 °C) with a biased electrical field during pulsed-laser deposition. The (001) orientation of the films, which makes no contribution to their polarization, was effectively reduced by the in situ electrical field of strength of 70 V/cm. This results in a large increase of remnant polarization from 1.1 to 6.2 μC/cm2, and reduction of the coercive field from 70 to 50 kV/cm, comparing the films grown freely under the same condition. Furthermore, the films showed an excellent fatigue-free property of up to 1010 switching cycles. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 28 (1995), S. 624-630 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: EDPDB is a Fortran program that simplifies the analysis of protein structure and makes it easy to extract various types of geometrical and biologically relevant information for the molecule both in isolation as well as in its crystallographic context. EDPDB offers a large set of functions by which the user can evaluate, select and manipulate the coordinates of protein structures. Types of calculation available include the determination of solvent accessibility, bond lengths and torsion angles, determination of the van der Waals volume of a group of atoms, determination of the best-fit plane through a set of points, evaluation of crystal contacts between a molecule in a crystal and all symmetry-related molecules, and the determination of `hinge-bending' motion between protein domains. It is also possible to compare different structures, to perform coordinate manipulations and to edit coordinate files. The program augments the graphic analysis of protein structure by allowing the user to construct a simple set of commands that will rapidly screen an entire structure. It may also make special purpose analyses feasible without complicated programming.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 50 (1994), S. 675-686 
    ISSN: 1399-0047
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: Crystals of macromolecules often have two or more molecules per asymmetric unit, or contain domains of a macromolecule or a macromolecular complex that are structurally independent. In such cases the conventional molecular-replacement method attempts to determine the position of each structural unit independently. Typically, some parts of the structure can be determined more easily or more reliably than other parts. Methods are proposed whereby information from a part of a crystal structure that has been determined can be used to help determine the structure of the remainder. Two different strategies are discussed, `subtraction' and `addition'. With `subtraction' strategy the Patterson function of the known part of the structure is subtracted from the `observed' Patterson. This approach is found to be most effective in the context of the rotation function in that it eliminates peaks that are irrelevant to the desired solution. With `addition' strategy the structure factors of the known component are added to those of the search model. This procedure is most effective in the context of the translation function because it brings the structure factors calculated from the search model closer to those observed. Methods of applying the fast Fourier transform to facilitate these calculations are described. A number of examples are provided including structures of mutants of T4 lysozyme that might not have been solved without recourse to the proposed methods. A method of including information from a heavy-atom derivative in a translation function is also developed and shown to be superior in some situations to the conventional translation function.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Free Radical Biology and Medicine 15 (1993), S. 494 
    ISSN: 0891-5849
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Medicine
    Type of Medium: Electronic Resource
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