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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8210-8215 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bi12(GaxBi1−x)O19.5 (BGaO) films with thickness in the range 100–1000 nm have been deposited on (100) Y-stabilized zirconia (YSZ) and (100) Bi12GeO20 (BGO) substrates using a KrF excimer pulsed laser and polycrystalline targets with composition x=0.63–0.72. The laser power density threshold for ablation of the targets has been determined to be J0=4.8 J/cm2. A deposition rate of 0.03 A(ring)/pulse was found for the substrate-target distance (6 cm) and laser fluence (J=7 J/cm2) used. Transparent and crystalline films were obtained heating the substrate in the 450–550 °C range under 1.5×10−1 mbar of oxygen pressure. Films deposited on hot substrates have a Ga stoichiometry x=0.5 but a Bi content slightly lower than that corresponding to sillenite. Films deposited on YSZ show preferential orientation. From the x-ray diffraction results and the comparison of the ionic distributions, it has been concluded that the most likely orientation between both lattices is 〈310〉{130}BGaO(parallel)〈011〉{100}YSZ. A {100}BGaO(parallel){100}BGO epitaxy has been inferred from Rutherford backscattering analysis. On both substrates the films behave as step waveguides with refractive index close to the value determined in bulk BGaO. © 1996 American Institute of Physics.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7510-7518 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: KTiOPO4 (KTP) samples heated in vacuum at temperatures in the 400–650 °C range show a broad optical absorption similar to that observed by H2 reduction. The position of the maximum depends on the reduction degree. The transparency of the sample is recovered by heating in air at high temperature (600 °C). Vacuum annealing leads to the reduction of Ti4+ to Ti3+ and also to the reduction of Fe, W, and Rh impurities present in the samples, as inferred from electron paramagnetic resonance measurements. X-ray irradiation at 15 K induces an optical absorption peaking at 585 nm. This absorption has been ascribed to the superposition of the 2T2→2E transition of Ti3+ in the two different Ti sites of the lattice. It is suggested that the absorption observed in vacuum-reduced samples consists of the overlapping of the latter contribution and a charge transfer band of Fe-Ti pairs. A loss of K and P ions has been observed after the annealing of KTP in vacuum at 800 °C forming a surface layer that scatters light. Moreover, the K and P loss decreases the optical absorption induced at lower temperature (T〈650 °C). © 1994 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3242-3248 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical damage has been induced in doped c-cut KTiOPO4 (KTP) crystals by low intensity (I0≤0.1 W/cm2) continuous-wave illumination with ultraviolet (λ=364 nm) light. The presence of two growth sectors with different sensibility to optical damage has been observed and it is related to their different impurity concentrations. Impurities shift the optical absorption edge of KTP to lower energy and make the induced damage more stable at room temperature. The damage saturation depends on the ultraviolet power density and on the impurity concentration. It has also been observed that some impurities (W and others) change their valence due to ultraviolet irradiation. A dynamic model considering the excitation of electrons from donors and their release from traps is proposed. The model allows us to describe the main features of the optical damage and erasure kinetics. © 2000 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2114-2121 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optically induced gratings have been created in Bi4Ge3O12 single crystals doped with Fe and Mn impurities. The writing kinetics of the holograms depends on the previous illumination with ultraviolet (UV) light, λ=310 nm. It has been concluded that there is a photorefractive contribution due to Fe impurities ([Fe]=2.7×1017 atoms/cm3) which can be observed when the holograms are written with 457.9 nm light. This contribution is essentially independent of the previous UV illumination, the steady state diffraction efficiency η of a 633 nm He-Ne laser beam is ≈2×10−4, and the corresponding modulation of the refractive index Δn at λ=633 nm is ≈4×10−6. The UV illumination induces a transient behavior of the diffraction efficiency with ηmax≈8×10−4, this regime is dominated by the photorefractive effect. After this maximum, η decreases to ≤0.3×10−4 and a quasi steady state is reached; in this steady state regime the contribution of a photochromic grating dominates the value of η. Mn-doped samples ([Mn]=4.3×1017 atoms/cm3) also show the transient behavior and the photochromic contribution.
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 83 (1985), S. 6197-6200 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The absorption and luminescence data reported in this paper definitely confirm that the precipitates formed during high-temperature aging of Pb-doped NaCl are PbCl2 microcrystals. A detailed comparison of the optical spectra of the precipitates and free PbCl2 is presented. The absorption and luminescence spectra are essentially similar in both cases, although the splitted structure of the prominent exciton band has now been resolved for the first time in the absorption spectrum of the precipitates. The splitting has been interpreted in terms of the noncubic crystal field effect on the 3P1 excited level of Pb+2 which is considered as a cationic exciton. The gap energy Eg and the binding energy εb of the exciton have also been determined (Eg=4.86 eV, εb=0.18 eV). The same UV and blue luminescence bands, as well as a thermally induced interconversion among them, have now been observed for the precipitates as well as for free PbCl2. This luminescence behavior, not previously understood, has been explained in terms of two coexisting AT and Ax minima in the adiabatic energy surface of the 3P1 level of a Pb+2 localized exciton (Fukuda's model).
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2904-2906 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nd-doped LiNbO3 films have been prepared on (012) sapphire substrates by pulsed laser deposition. LiNbO3 phase is formed using Li rich targets, a 1.5×10−2 mbar oxygen pressure atmosphere, and heating the substrate to 520 °C. The crystallinity of 1-μm-thick films has been enhanced by postdeposition thermal treatments at 600 °C. The [Nd]/[Nb] concentration ratio in the film is equal to its value in the target; however, a limit for the Nd incorporation to the LiNbO3 phase has been found due to the preferential nucleation of Li deficient phases for [Nd]/[Nb]〉0.1. The Nd photoluminescence of the films have been studied at 77 K exciting the 4F3/2 multiplet. The photoluminescence of congruent LiNbO3 single crystals is well reproduced in films prepared from targets with a [Li]/[Nb]=1.6 composition. Films prepared from targets with a [Li]/[Nb]=3 composition, additionally show an emission, with a main maximum at 1064 nm, the splitting of the 4F3/2 multiplet being 80 cm−1. The possible origin of the latter photoluminescence is discussed. © 1997 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2037-2039 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The chemical composition, structure and extension of the Pb-enriched nonferroelectric near-surface region of stoichiometric (Pb, La)TiO3 ferroelectric films was characterized by x-ray diffraction, Rutherford backscattering spectroscopy and x-ray photoemission spectroscopy. Its origin as a result of the Pb excess segregation from the growing (Pb, La)TiO3 bulk and subsequent oxidation was revealed. A postdeposition procedure to control its composition and thereby its properties was provided. Thus, a decrease of the near-surface Pb excess of about 75% was achieved. © 2001 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 502-504 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Crystalline and stoichiometric KNbO3 thin films have been grown on (100) oriented MgO substrates by pulsed laser deposition technique. Electron microprobe analysis and Rutherford backscattering spectroscopy of the films show a progressive loss of K with increasing substrate-target distance. To compensate for this K loss the ceramic KNbO3 targets were enriched with K2CO3 powder, pressed at room temperature, and sintered at 650 °C. For a substrate-target distance of 6 cm, targets with [K]/[Nb] molar ratio=2.85 yield stoichiometric KNbO3 films. A partial oxygen pressure of 2×10−2 mbar was optimum for growing transparent films. Films grown between 650 and 700 °C show the KNbO3 crystalline phase with its (110) axis preferentially oriented perpendicular to the surface of the substrate. At these temperatures KNbO3 diffusion into the MgO substrate is observed. Films grown from KNbO3 single crystal targets only contain a Mg4Nb2O9 crystalline layer.
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  • 9
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Applied Surface Science 69 (1993), S. 149-155 
    ISSN: 0169-4332
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Luminescence 24-25 (1981), S. 193-196 
    ISSN: 0022-2313
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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