ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have investigated arsenic precipitation in arsenide heterostructures grown at low temperature by molecular beam epitaxy. In these heterostructures, both doping and bond strength are found to affect arsenic precipitation during thermal annealing. For GaAs/Al0.3Ga0.7As multiple quantum wells, where GaAs is Be doped and Al0.3Ga0.7As is Si doped, arsenic precipitates preferentially appear in the GaAs region after annealing. For In0.1Ga0.9As/GaAs/In0.1Al0.9As heterostructures, whether they are doped or not, arsenic precipitates always tend to condense in the In0.1Ga0.9As region, indicating that the bond strength effect dominates the process of arsenic precipitation over the doping effect. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.124274
Permalink