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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 112 (2000), S. 2463-2469 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Surface-aligned photo-oxidation of CO with O2 was demonstrated on two stepped surfaces, Pt(335) and Pt(779). UV light photolysis of O2, localized exclusively on step sites, generates reactive oxygen atoms which oxidize preferentially the step-site CO. This effect was observed by monitoring labeled-CO consumption from step and terrace sites by reflection–absorption infrared spectroscopy, and also by monitoring labeled-CO2 desorbed in the gas phase from step and terrace sites by mass spectrometry. Photo-oxidation of step-CO was found to be about 2 times more efficient than photo-oxidation of terrace-CO, irrespective of the surface step density. This effect was attributed to the initial alignment of the O2 intramolecular axis on stepped Pt surfaces, parallel to the step edge. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 8651-8658 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Infrared reflection-absorption spectroscopy and density functional theory, within the generalized gradient approximation, were used to investigate both experimentally and theoretically N2 chemisorption on stepped and smooth Pt surfaces. N2 chemisorption was observed to occur only on the edge atoms of step defect sites in atop configuration by both methods. The calculated vibrational frequency of N2 chemisorbed on Pt(112) step sites (2244 cm−1) is in good agreement with the frequency observed experimentally (2231–2234 cm−1) at saturation coverage on Pt(335) and Pt(779). The predicted small N2 binding energy confirmed its weak chemisorption on Pt surfaces claimed in previous studies. The calculations indicate that N2 decreases and CO increases the work function of the Pt(112) surface. N2 could be coadsorbed with CO below saturation coverage of the steps with CO and there is a charge transfer between the two adspecies through the substrate. © 1999 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 103 (1995), S. 9438-9443 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: CO chemisorption has been studied on TiO2(110) under surface conditions where oxygen anion vacancy sites are not present (oxidized surface), compared to conditions where the vacancy sites are present (annealed surface). The binding energy of CO on the nondefective TiO2(110) surface is 9.9 kcal/mole in the limit of zero coverage. CO...CO repulsive interactions have been observed at higher coverages. When anion vacancy sites are produced under controlled annealing conditions in vacuum at 900 K, a significant increase in the desorption temperature of a portion of the chemisorbed CO is observed. This observation, coupled with measurements showing that defective TiO2(110) does not have enhanced CO chemisorption capacity, suggests that CO adsorbs more strongly on lattice Ti sites in the vicinity of anion vacancy sites. It is postulated that enhanced CO bonding occurs via the interaction of the O moiety of CO with the anion vacancy site while primary adsorbate bonding occurs via the C moiety to Ti lattice sites. Neither CO2 production nor oxygen exchange in CO occurs when CO desorbs from defective TiO2(110).
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 563-572 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Electron stimulated desorption (ESD) of CO+, O+, metastable neutral CO*, and ground state neutral CO from the CO/Pt(111) was studied, using isotopic substitution of CO. Four isotopic versions of CO were compared in their desorption behavior. Contrary to the prediction of theoretical models that suggest a decrease of the ESD yield with increasing mass of a given desorption product, the CO+ and CO* ESD yields were found to be larger from the (heavier) 12C18O than from the (lighter) 13C16O adsorbate. The O+ ESD yields followed the expected trend Y(16O+)(approximately-greater-than)Y(18O+). No isotope effect was observed for ground state neutral CO desorption. Qualitative arguments explaining the anomalous isotope effect, and emphasizing the importance of internal dynamics, in particular, the rotation of diatomic desorption products in the ESD process, are presented. Here it is shown that the velocity of departure of the carbon end of the rotating CO molecule may control neutralization or quenching effects for CO+ or CO* produced by electron stimulated desorption. Thus, neutralization or quenching of the excited CO species occurs via carbon-centered orbitals of the departing species. © 1995 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Langmuir 11 (1995), S. 2054-2059 
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Langmuir 11 (1995), S. 2592-2599 
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Langmuir 10 (1994), S. 3663-3667 
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2842-2853 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron spectroscopic comparison of the C-rich SiC(0001¯) and Si-rich SiC(0001) surfaces after cleaning and disordering by Ar+ ion sputtering and subsequent annealing is reported. The chemical behavior of the two disordered surfaces differs significantly. Three distinct temperature regions with different carbon surface segregation kinetics are discernible on SiC(0001¯). On SiC(0001) only one temperature region for C-segregation is observed. Below 900 K, no spectroscopic differences between the two crystal surfaces are observed. Between 900 and 1300 K, both faces are terminated by a surface graphite layer and the C-rich face shows an additional carbon surface segregation process. Above 1300 K, the C-terminated surface graphitizes at a higher rate than the Si-terminated surface. Massive graphitization on both surfaces above 1300 K is attributed to Si(g) sublimation from the SiC surfaces. The results demonstrate that extensive surface disordering of polar SiC faces does not destroy the memory for the polarity of the original crystal insofar as high-temperature surface chemistry is concerned.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2558-2563 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comparison of the kinetics of oxidation at 995 and 1345 K of the SiC(0001¯) and SiC(0001) crystal faces is made. The oxidation rate on the SiC(0001¯) (C-rich face) is higher at both temperatures. SiO2 is formed. At 1345 K, the initial oxidation process is retarded by excess surface carbon. When the excess carbon is volatilized by either CO or CO2 formation, the oxidation rate is higher at 1345 K than at 995 K.
    Type of Medium: Electronic Resource
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