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  • 1
    Electronic Resource
    Electronic Resource
    The effects of a surface magnetic field on reactive ion etching (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 447-451 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of a surface magnetic field on reactive ion etching are described. The surface magnetic field is formed by the construction of a surface-multimagnetic mirror configuration (SURMAC) cage that consists of permanent magnets arranged inside the wall of a parallel plate rf discharge chamber. The experimental results of ion density, electron temperature, negative self-bias of an rf-generated N2 plasma, and etching of Si and SiO2 with a CF4 plasma are obtained with and without the SURMAC cage (rf power 40–520 W, gas pressure 20–100 mTorr). The results show that a surface magnetic field increases the etch rates of Si and SiO2 at high power (〉250 W) and high pressure (100 mTorr), improves the Si to SiO2 selectivity at low power (〈200 W) and decreases the magnitude of negative self-bias at all conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347682
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  • 2
    Electronic Resource
    Electronic Resource
    Electron ejection from MgO thin films by low energy noble gas ions: Energy dependence and initial instability of the secondary electron emission coefficient (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4049-4051 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low energy ion-induced secondary electron emission from the surface of thin (500–5000 Å) polycrystalline MgO films has been investigated with various noble gas ions at energies ranging from 45 to 300 eV. The dependence of secondary electron emission coefficient γi on the type and energy of ions is reported and interpreted in terms of electron ejection mechanisms. As-deposited MgO films showed an initial fluctuation in the secondary emission current, which upon annealing or after a certain ion bombardment time irreversibly disappeared. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371328
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  • 3
    Electronic Resource
    Electronic Resource
    Characteristics of vacuum ultraviolet emission from a surface discharge type alternating current plasma display panel cell (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3092-3096 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the time variation of 147 nm vacuum ultraviolet (VUV) resonance emission as well as the continuum such as 152 and 173 nm VUV and the two-dimensional images of 147 nm VUV from the He–Xe discharge in a surface discharge type single alternating current (ac) plasma display panel (PDP) cell using an image intensified charge-coupled device camera. A detailed measurement of the resonance radiation exhibits a fast rising to its peak and decay with multiple time constants. The changes in decay time constants, relative intensities of resonance, and dimer radiation change with the total gas pressure as well as the Xe partial pressure implies that collisional excitation, deexcitation, and interlevel transition play important roles in determining the VUV emission characteristics. The two-dimensional images show that a weak, broad VUV emission comes out from the cathode area with a strong, narrow emission from the anode area. We have solved the He–Xe discharge reaction equations together with the two-dimensional multifluid equations for electrons and ions to explain the experimental results and elucidate the dominant kinetic pathway which leads to the VUV emission in the ac PDP cells. The time variations of the averaged Xe*(3P1) resonance atom and Xe2*(0u+,v(very-much-greater-than)0), and Xe2*(1u,v=0) dimer densities which emit 147, 152, and 173 nm VUV were compared with the measured time variation of each spectral intensities and showed very close qualitative agreements. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369648
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of process parameters on low-temperature silicon homoepitaxy by ultrahigh-vacuum electron-cyclotron-resonance chemical-vapor deposition (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4112-4117 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of the process parameters on the low-temperature Si homoepitaxial growth in an ultrahigh-vacuum electron-cyclotron-resonance chemical-vapor-deposition (UHV-ECRCVD) system are examined by reflection high-energy electron diffraction and transmission electron microscopy (TEM). The substrate dc bias during plasma deposition drastically changes the crystal structure from polycrystalline silicon at negative bias to single crystalline at positive bias. The defect production during plasma deposition is mainly caused by the energetic ions impinging on the Si substrate, and it can be effectively suppressed by the proper control of the process parameters in the direction of minimizing the ion energy. The positive substrate dc bias is a prerequisite for better crystallinity of low-temperature Si, but additionally the other process parameters such as microwave power, distance of the ECR layer from the substrate, SiH4 partial pressure, and total pressure should be definitely optimized to obtain dislocation-free Si epilayers. Dislocation-free Si epilayers are successfully grown at 560 °C at the positive dc bias greater than +10 V with the optimal control of the other process parameters. At temperatures below 470 °C, a high density of defects in the Si epilayers is observed by plan-view TEM, and the growth of the single-crystalline silicon is possible even without substrate heating but with a high density of defects. It is concluded that the substrate dc bias is a critical process parameter and the other process parameters do play a small but significant role as well in determining the crystallinity of the Si epilayers grown by UHV-ECRCVD. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359870
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  • 5
    Electronic Resource
    Electronic Resource
    Temporal behavior of the wall voltage in a surface-type alternating current plasma display panel cell using laser induced fluorescence spectroscopy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2539-2542 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electric fields were measured using laser induced fluorescence spectroscopy and the wall voltage was estimated from the measured electric fields in a surface-type alternating current plasma display panel cell with a helium discharge (100 Torr) driven by square sustaining pulses. The wall voltage showed very complicated, temporally dynamic behavior. The polarity of the wall voltage changed rapidly as soon as the plasma was ignited, and its magnitude continuously increased due to the continuous injection of charged particles onto the dielectric surface from the afterglow plasma during the rest of the pulse-on period. When there was a self-erasing discharge at the instant of the pulse turn-off, the wall voltage dropped sharply by about 110 V and decreased continuously owing to the diffusion-induced charge redistribution or leakage. The decay rate of the wall voltage during the pulse-off period was very dependent on the surface condition of the protecting layer of the dielectric. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1343893
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  • 6
    Electronic Resource
    Electronic Resource
    Vacuum ultraviolet emission characteristics from He–Ne–Xe gas discharge in an alternating current plasma display panel cell (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1257-1262 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measured the time integrated vacuum ultraviolet (VUV) emission spectra of He–Ne–Xe gas mixture from a surface type alternating current (ac) plasma display panel cell. The measured emission lines are the resonance line (147 nm) from Xe*(1s4), the first continuum (150 nm) and the second continuum (173 nm) from Xe dimer excited states. The relative intensities of VUV spectral lines from Xe* and Xe2* are dependent on the He/Ne mixing ratio as well as the Xe partial and total pressure. The intensity of 147 nm VUV increases with the Ne content increase and Xe2* molecular emission increases with the He content increase. Infrared (IR) spectra and the time variation of VUV were measured to explain the reaction pathway and the effect of the mixing ratio of He/Ne on the spectral intensity. A detailed study for the decay time shows that the decay time of 147 nm has two time constants and the radiation of 150 and 173 nm results mainly from Xe*(1s5). The IR spectra shows that the contribution from Xe**(〉6 s) to Xe*(1s5) and Xe*(1s4) in He–Xe is different from that of Ne–Xe. The change of IR intensity explains the spectral intensity variations of He–Xe and Ne–Xe discharge. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373812
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  • 7
    Electronic Resource
    Electronic Resource
    Low-temperature silicon homoepitaxy by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1021-1023 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality silicon homoepitaxial layers are successfully grown at 560 °C by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition (UHV-ECRCVD) using a SiH4/H2 plasma. The effects of substrate dc bias on the in situ hydrogen plasma clean and the subsequent silicon epitaxial growth are examined by the reflection high-energy electron diffraction (RHEED), secondary ion mass spectroscopy (SIMS), and cross-section transmission electron microscopy (XTEM). It is observed that the substrate dc bias plays a significant role in obtaining a damage-free, clean Si substrate prior to epitaxial growth. Severe damage in the Si surface is observed by XTEM, though RHEED shows a streaky pattern, when the substrate is electrically floating, but the damage can be suppressed with +10 V dc bias to the substrate. Substrate dc bias during plasma deposition drastically changes the crystal structure from polycrystalline at −50 V to high quality epitaxial silicon at substrate biases greater than +50 V. Precise control of the ion energy during in situ cleaning and plasma deposition is very important in low-temperature Si epitaxy by UHV-ECRCVD and it is possible by proper control of the substrate dc bias.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110957
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  • 8
    Electronic Resource
    Electronic Resource
    Surface roughness and defect morphology in electron cyclotron resonance hydrogen plasma cleaned (100) silicon at low temperatures (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3590-3592 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface roughening of (100) Si at low temperatures during electron cyclotron resonance hydrogen plasma cleaning is studied in an ultrahigh vacuum environment. The effects of process parameters on surface roughness are quantitatively analyzed by atomic force microscopy besides reflection high energy electron diffraction. Crystalline defect morphology is studied by transmission electron microscopy to understand its role in surface roughness. Surface roughness is strongly related to the nucleation and growth of {111} platelet defects at the Si subsurface region and the preferential etching at positions where {111} platelet defects intersect the Si surface. Hydrogen ion flux and substrate temperature can be successfully controlled to tailor the {111} platelet defects, therefore, surface roughness. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115327
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  • 9
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    Surface roughness and defect morphology in electron cyclotron resonance hydrogen plasma cleaned (100) silicon at low temperatures (1995)
    American Institute of Physics
    Details
    Publication Date: 1995-12-11
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics
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  • 10
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    Discharge characteristics of He–Ne–Xe gas mixture with varying Xe contents and at varying sustain electrode gap lengths in the plasma display panel (2009)
    American Institute of Physics
    Details
    Publication Date: 2009-09-15
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics
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