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  • 1
    Electronic Resource
    Electronic Resource
    Recording of transitions at high linear density in exchange isolated Pt/CoCrTa multilayer thin films (abstract) : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4383-4383 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multilayer Pt/CoCrTa thin film structures that display little intergranular exchange coupling and nearly 100% remanence in the perpendicular direction were prepared. Written transitions retain good fidelity at more than 300 000 transitions per inch. Magnetic recording of continuous square waves and dibit patterns were characterized using an inductive contact recording transducer, a flying magnetoresistive transducer, and magnetic force microscopy. With the introduction of intergranular exchange isolation into the media, observed media noise in the recording transducers becomes negligible relative to the noise from the recording system electronics. Analysis of magnetic force microscopy images yields a signal to integrated noise ratio of 17 dB at 309 000 transitions per inch written in a 4-μm wide track, which is comparable to a measured signal to total noise ratio of 8 dB at 350 000 reversals per inch measured using an inductive transducer at 100 in./s. These results are contrasted with recording on exchange coupled Pt/Co multilayers and longitudinal media. ©1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364831
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  • 2
    Electronic Resource
    Electronic Resource
    Study of reactive-ion-etch-induced lattice damage in silicon by Ar, CF4, NF3, and CHF3 plasmas (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2059-2063 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactive-ion-etch-induced damage in silicon has been investigated using transmission electron microscopy (TEM), Rutherford backscattering (RBS) ion channeling, and laser-induced thermal waves (TW). A correlation has been found between lattice damage in silicon due to reactive ion etching and leakage current properties of thermal oxide films subsequently grown on the damaged silicon. The silicon wafers were plasma etched using Ar, CF4, NF3, and CHF3 etch gases at dc bias voltages ranging from 150 V to 450 V. Lattice damage at the silicon surface, as determined by TEM and RBS, was found to depend on both the dc bias voltage and the etch chemistry. Subsequent leakage current measurements of the silicon oxides show that the samples with more silicon substrate lattice damage prior to oxidation also have correspondingly higher leakage. The thermal wave technique also indicates a damage dependence on dc bias and on etch chemistry; however, the thermal wave measurements indicate a damage dependence on etch chemistry different from TEM and RBS measurements. The source of this difference is not yet understood.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341713
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  • 3
    Electronic Resource
    Electronic Resource
    Ballistic-electron emission microscopy study of the Au/Si(111)7×7 and Au/CaF2/Si(111)7×7 interfaces (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2300-2302 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ballistic-electron emission microscopy (BEEM) has been performed on Au/n-Si(111)7×7 and Au/CaF2/n-Si(111)7×7 in UHV. In both cases, the topography of the Au surface is characterized by ≈2.5 A(ring) height terraces, stacked in several stages, with rounded shapes for Au/Si, and hexagonal shapes for Au/CaF2/Si. BEEM up to tip voltages of 8 V on Au/Si is not altering the ballistic transmissivity, in contrast to previous work on Au/Si interfaces which involved chemical preparations of the Si surfaces. The shape of the BEEM spectra on Au/CaF2/Si depends on spectral features of the density of states of the CaF2 thin film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111650
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  • 4
    Electronic Resource
    Electronic Resource
    p+ doping of Si by Al diffusion upon annealing Al/n-Si(111)7×7 (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3010-3012 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel method for the formation of a p+-layer underneath a Si(111)7×7 surface is presented. It is based on annealing of an epitaxial Al/n-Si(111) interface up to complete desorption of the Al film. This leads to a strong potential variation within the substrate, as observed in Si-2p core-level photoemission spectra with variable sampling depth, while scanning-tunneling microscopy reveals an unchanged 7×7 reconstructed surface. These observations are consistent with a p+ doping of (4±2)×1018/cm3 and a lowering of the surface Fermi level by (0.06±0.02) eV. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114260
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of local facet and lattice damage on nucleation of diamond grown by microwave plasma chemical vapor deposition (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1559-1561 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond deposition on an anisotropic etched Si and ion implanted Si surfaces have been examined here for the first time. Local facets on an anisotropic etched surface shows no nucleation of diamond. Synthetic diamond, in contrast, has been able to nucleate on an As+ or Si+ ion implanted Si substrate without diamond abrasive pretreatment. Selective deposition of diamond occurs only for low dose ion implantation, 100 keV 1014 cm−2, but not for high dose ion implantation, 100 KeV 1016 cm−2. Strain is proposed as the main reason for nucleation of diamond on the ion implanted Si substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107250
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  • 6
    Electronic Resource
    Electronic Resource
    Localized electron trapping and trap distributions in SiO2 gate oxides (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3123-3125 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Localized trap filling and trap creation in SiO2 were investigated by injecting electrons into metal-oxide-semiconductor structures with a scanning tunneling microscope. The resulting charging causes changes in the oxide potential that were studied as a function of an applied oxide field. The charge densities and charge distributions were obtained by modeling the field dependence of the potential arising from multiple sets of sheet charges in the oxide. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120266
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  • 7
    Electronic Resource
    Electronic Resource
    Quantum interference in SiO2: A conduction-band mass reappraisal (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1221-1223 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantum oscillations arising from interference in over-the-barrier injected electrons crossing a metal–oxide–semiconductor structure were observed for a 2.8 nm SiO2 layer. Model calculations that include image force effects are fitted to the data to obtain a conduction-band mass of mox=(0.63±0.09)m0. The field dependence of the oscillations was used to deduce the polarity and magnitudes of oxide charge induced by the high fluence of electrons injected with the scanning tunneling microscope during spectral acquisitions. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122133
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  • 8
    Electronic Resource
    Electronic Resource
    High linear density written transitions in exchange isolated Pt/CoCrTa multilayer thin films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 124-126 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multilayer Pt/CoCrTa thin-film structures have been prepared which display little intergranular exchange coupling and nearly 100% remanence in the perpendicular direction. Magnetic recordings of continuous square wave patterns have been made and characterized using an inductive contact recording transducer and by magnetic force microscopy. Written transitions appear to retain good fidelity at more than 300 000 transitions per inch. With exchange isolation of the grains, media noise becomes negligible relative to thermal noise from the recording system electronics. Analysis of magnetic force microscopy images yields a signal to integrated noise ratio of 17 dB at 309 000 transitions per inch written in a 4 μm wide track, which is comparable to a measured signal to total noise ratio of 8 dB at 350 000 reversals per inch measured using an inductive transducer at 100 in./s. These results are contrasted with observations on exchange coupled Pt/Co multilayers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118096
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  • 9
    Electronic Resource
    Electronic Resource
    Control of Follicle-Stimulating Hormone and Luteinizing Hormone Release by Hypothalamic Peptides (1993)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 687 (1993), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1993.tb43853.x
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  • 10
    Electronic Resource
    Electronic Resource
    Effects of exogenous neurohormone, gonadotropin (GtH) and dopaminergic drugs on the serum GtH content and ovulatory responsiveness of wild catfish, Silurus asotus (Linnaeus, 1758) (2004)
    Oxford, UK : Blackwell Science Ltd
    Aquaculture research 35 (2004), S. 0 
    Details
    ISSN: 1365-2109
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Wild female catfish Silurus asotus (Linnaeus, 1758) were injected with domperidone (DOM) alone, [d-Ala6, Pro9 Net]-luteinizing hormone-releasing hormone (LHRH-A) alone once or twice, LHRH-A plus DOM once or twice simultaneously at 6-h intervals, LHRH-A plus carp pituitary extract (CPE) twice simultaneously at 6-h intervals and LHRH-A plus human chorionic gonadotropin (HCG) twice simultaneously 6 h apart respectively. The results indicated that injection of LHRH-A at a dosage of 0.01–0.02 μg g−1 body weight (BWt) alone induced a low but significant increase in serum gonadotropin (GtH) (P〈0.05) and resulted in a very low ovulation rate, while DOM at a dosage of 5 μg g−1 BWt alone did not induce an increase in the serum GtH levels and ovulation; in contrast, LHRH-A at a dosage of 0.01 μg g−1 BWt plus DOM at a dosage of 5 μg g−1 BWt (termed the Linpe technique) increased the serum GtH (P〈0.05) significantly and induced an ovulatory rate of 100%, while LHRH-A plus CPE or HCG resulted in an increase in the serum GtH (P〈0.05) and high ovulatory rate, although the latency period was longer when fish were given LHRH-A plus HCG or CPE.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2109.2004.01017.x
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