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  • 1
    Electronic Resource
    Electronic Resource
    Argon incorporation in Si(100) by ion bombardment at 15–100 eV (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7101-7106 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Argon incorporation in Si(100) by low energy ion bombardment has been studied by polar angle dependent x-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy. The bombardment was performed at 15, 20, and 100 eV in an ultrahigh vacuum chamber where a mass-separated argon ion beam with an energy spread of less than 1 eV was directed to the target. Both the argon penetration depth and incorporation probability were found to increase with bombardment energy. With a fluence of 2×1017/cm2, most of the incorporated argon was located within 20 A(ring) of the target surface for the 100 eV bombardment and within 10 A(ring) for the 15 eV bombardment. In all cases, the argon depth distribution reached a maximum and then declined. At this fluence, the incorporation probabilities were 0.0015 and 0.0004 for the 100 and 15 eV bombardment, respectively. When the amount of incorporated argon was measured as a function of fluence, it increased with fluence at low fluences, reached a quasisaturation at about 1×1016/cm2, but became fluence dependent again above 1×1018/cm2. The retained argon was stable at room temperature but showed at least two stages of thermal desorption in the temperature range 25–500 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355024
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  • 2
    Electronic Resource
    Electronic Resource
    High-energy (e, 2e) spectrometer for the study of the spectral momentum density of materials (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 3831-3840 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new spectrometer for the study of energy-resolved momentum densities is described. The (e, 2e) spectrometer uses a symmetric configuration and uses incoming energies up to 50 keV. Energy resolution and momentum resolution are 1.8 eV and 0.1 a.u., respectively. Compared to previous spectrometers this spectrometer has rather low levels of multiple scattering, and thus allows for more quantitative analysis of the data and/or the measurement of thicker samples. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1290507
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  • 3
    Electronic Resource
    Electronic Resource
    Condensed matter electron momentum spectrometer with parallel detection in energy and momentum (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 2214-2226 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An electron momentum spectrometer has been constructed which measures electron binding energies and momenta by fully determining the kinematics of the incident, scattered, and ejected electrons resulting from (e,2e) ionizing collisions in a thin solid foil. The spectrometer operates with incident beam energies of 20–30 keV in an asymmetric, non-coplanar scattering geometry. Bethe ridge kinematics are used which for 20 keV incident energy has scattered electron energies of 18.8 keV at a polar angle of θs=14°and azimuthal angles φs in the range from −18° to +18° and ejected electrons of 1.2 keV and θe=76°with φe=π±6°. The technique uses transmission through the target foil, but it is most sensitive to the surface from which the 1.2 keV electrons emerge, to a depth of about 2 nm. Scattered and ejected electron energies and azimuthal angles are detected in parallel using position sensitive detection, yielding true coincidence count rates of 6 Hz from a 5.5 nm thick evaporated carbon target and an incident beam current of around 100 nA. The energy resolution is approximately 1.3 eV and momentum resolution approximately 0.15 a0−1. The energy resolution could readily be improved by monochromating the incident electron beam.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144730
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  • 4
    Electronic Resource
    Electronic Resource
    Selective amorphization of ion-bombarded SiGe strained-layer superlattices (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 951-953 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si/SixGe1−x multilayers were implanted with Si ions of 540 keV at doses between 1.0×1014 and 2.5×1015 ions/cm2. Channeling spectra were taken using 3 MeV B++ ions. These measurements showed a rapid increase of the Ge minimum yield with implantation dose. The increases were paralleled by a growth of disorder peaks in those parts of the Si backscattering spectrum corresponding to the SixGe1−x layers. After 1.2×1015 Si ions/cm2 the SiGe layers were completely amorphized. Cross-sectional transmission electron microscope pictures confirmed the selective amorphization of the SiGe layers. Annealing of an irradiated sample resulted in recrystallization of all the amorphous layers in the 450–550 °C temperature range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104488
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  • 5
    Electronic Resource
    Electronic Resource
    Influence of metal interlayers on Schottky barrier formation for Au/ZnSe (100) and Al/ZnSe (100) (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1530-1532 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky barrier formation for Al/ZnSe (100) and Au/ZnSe (100) was studied using photoelectron spectroscopy. The initial Fermi level position for sputter-annealed ZnSe (100) surfaces was 2.05 eV above the valence-band maximum (VBM). The final Fermi level position, established after the deposition of several monolayers of metal adatoms, was very different for Al (2.17 eV) and Au (1.25 eV, relative to the VBM). The deposition of Au interlayers for Al/Au/ZnSe and Al interlayers for Au/Al/ZnSe showed that it is possible to "tune'' the Schottky barrier height between these extremes by choosing interlayers of definite thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99947
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  • 6
    Electronic Resource
    Electronic Resource
    Femtosecond Biology (1992)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Biophysics and Biomolecular Structure 21 (1992), S. 199-222 
    Details
    ISSN: 1056-8700
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Biology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.bb.21.060192.001215
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  • 7
    Electronic Resource
    Electronic Resource
    Compositional disordering of strained InGaAs/GaAs quantum wells by Au implantation: Channeling effects (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2733-2735 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Compositional disordering of strained InGaAs quantum wells by the implantation of Au ions has been examined as a function of the incident implantation angle. Together, photoluminescence and secondary ion-mass spectrometry demonstrate that mixing at depths significantly greater than the mean-implantation range is due to the creation of point defects by ions which have channeled into the crystal. Compositional disordering effects due to the rapid thermal diffusion of Au ions was negligible.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105899
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  • 8
    Electronic Resource
    Electronic Resource
    Ultrashallow depth profiling using ozone oxidation and HF etching of silicon (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 78-80 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new approach for semiconductor ultrashallow depth profiling is presented. In this technique, the compositional and structural properties in the near-surface region of a silicon sample were measured by Rutherford backscattering spectroscopy, and the chemical and electrical properties by x-ray photoelectron spectroscopy (XPS). The measurements were repeated after the removal of a few atomic layers of silicon via ozone oxidation followed by a hydrofluoric acid etch of the oxide. The depth distributions of composition and surface potential were then determined. The etch-depth per cycle of this treatment was estimated by measuring the oxide thickness formed in each ozone oxidation with XPS, and was calibrated to be 0.5 nm of silicon per cycle by applying the technique to a Si/Ge/Si sample with a known silicon overlayer thickness. This profiling technique, therefore, provides a depth resolution of better than 0.5 nm. The applicability of the technique is demonstrated by showing the compositional profiling results on a p-Si (100) sample treated with reactive ion etching, and the surface potential profiling data on an n-Si (100) sample bombarded by 1 keV Ar+.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109702
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  • 9
    Electronic Resource
    Electronic Resource
    THE BELGIAN NATIONAL RAILWAYS (S. N. C. B.) (1958)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of public and cooperative economics 29 (1958), S. 0 
    Details
    ISSN: 1467-8292
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Economics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1467-8292.1958.tb01065.x
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  • 10
    Electronic Resource
    Electronic Resource
    3-Lithio-1,5-dimethoxypentane. Prognostication, preparation and some properties of a dimeric alkyllithium (1987)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 109 (1987), S. 2187-2188 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00241a050
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