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  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7708-7711 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Structural correlations in amorphous gallium arsenide are investigated with molecular-dynamics simulations using a new interatomic potential function. The calculated static structure factor, in particular the height and width of the first peak which is a signature of the intermediate-range correlations, is in excellent agreement with x-ray diffraction experiments. Atomistic topology on intermediate length scales is elucidated through the analyses of shortest-path rings, partial static structure factors, and bond-angle distributions. The calculated energy difference between crystalline and amorphous systems is also in good agreement with electronic-structure calculations. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 10001-10010 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: The effect of pressure on inter- and intramolecular phonons in solid C60 is studied using a unified model which consists of a tight-binding potential for the intramolecular interaction and a Lennard-Jones and bond charge model for the intermolecular interaction. At various pressures (up to 56 kbar), the phonon dispersion and density of states of solid C60 are calculated in the energy range from 0 to 210 meV. At zero pressure, the intermolecular phonon density of states shows peaks around 2.3 and 3.7 meV, and extends to 7.6 meV. Not only the intermolecular phonon modes but also the intramolecular modes show significant dispersions, especially those modes with energy below 70 meV. Under pressure, the intermolecular phonon spectrum shows strong broadening. The libron modes shift to higher frequencies at a rate of 0.40 cm−1/kbar. The effect of pressure on intramolecular modes manifests in two ways: (i) the lower-frequency modes broaden and shift toward higher energies, and (ii) the higher-frequency modes split and shift upward in energy. Intramolecular modes shift to higher energy at a rate up to 0.88 cm−1/kbar. Most Raman and infrared active modes show strong pressure dependence. Inter- and intramolecular phonon spectra at various pressures are presented and results are compared with experiments.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3328-3330 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Multimillion-atom molecular dynamics simulations of silicon diselenide nanowires are used to study mechanical properties and changes in nanowire structure under strain. The nanowires transform from a body-centered orthorhombic structure to a body-centered tetragonal structure under uniaxial strain, which causes an unexpected elongation in one of the transverse directions. For larger strains, the nanowires undergo a process of local amorphization, followed by fracture at one of the resulting crystalline–amorphous interfaces. The critical strain for fracture is 15%. Local temperature and stress distributions after failure are interpreted in terms of the local amorphization. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 4332-4334 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Molecular dynamics simulations of nanoindentation of 10 million atom α-Si3N4 films using a rigid indenter are reported. Local pressure distributions and configuration images of the plastically deformed region are presented. Residual tensile pressures correspond to voids and cracks that separate regions of compacted, plastically deformed material and elastically recovered crystalline material. Structural analysis shows that pile-up material on the surface and deformed material under the indenter is amorphous. With this indenter geometry, Si3N4 deforms primarily by amorphization, which is arrested by cracking at the indenter corners and piling-up of material along the indenter sides. Indentation fracture exhibits anisotropic behavior consistent with the orientation-dependent fracture toughness values. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 5
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4577-4579 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Lateral size effects on the stress distribution and morphology of InAs/GaAs square nanomesas are investigated using molecular dynamics (MD) method. Two mesas with the same vertical size but different lateral sizes are simulated. For the smaller mesa, a single stress domain is observed in the InAs overlayer, whereas two stress domains are found in the larger mesa. This indicates the existence of a critical lateral size for stress domain formation in accordance with recent experimental findings. The InAs overlayer in the larger mesa is laterally constrained to the GaAs bulk lattice constant but vertically relaxed to the InAs bulk lattice constant. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 6
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3717-3719 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Large-scale molecular dynamics simulations are performed to investigate the mechanical stresses in InAs/GaAs nanomesas with {101}-type sidewalls. The in-plane lattice constant of InAs layers parallel to the InAs/GaAs(001) interface starts to exceed the InAs bulk value at the twelfth monolayer (ML) and the hydrostatic stresses in InAs layers become tensile above ∼12 ML. As a result, it is not favorable to have InAs overlayers thicker than 12 ML. This may explain the experimental findings of the growth of flat InAs overlayers with self-limiting thickness of ∼11 ML on GaAs nanomesas. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 7
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1132-1134 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Structure, mechanical properties, and sintering of nanostructured SiC (n-SiC) are investigated with neutron scattering and molecular-dynamics (MD) techniques. Both MD and the experiment indicate the onset of sintering around 1500 K. During sintering, the pores shrink while maintaining their morphology: the fractal dimension is ∼2 and the surface roughness exponent is ∼0.45. Structural analyses reveal that interfacial regions in n-SiC are disordered with nearly the same number of three- and fourfold coordinated Si atoms. The elastic moduli scale with the density as ∼ρμ, where μ=3.4±0.1. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 8
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1969-1971 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Ten million atom multiresolution molecular-dynamics simulations are performed on parallel computers to determine atomic-level stress distributions in a 54 nm nanopixel on a 0.1 μm silicon substrate. Effects of surfaces, edges, and lattice mismatch at the Si(111)/Si3N4(0001) interface on the stress distributions are investigated. Stresses are found to be highly inhomogeneous in the nanopixel. The top surface of silicon nitride has a compressive stress of +3 GPa and the stress is tensile, −1 GPa, in silicon below the interface. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 9
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3470-3472 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Resonant tunneling of an electron through a double quantum dot is studied in the presence of phonon scattering and magnetic field. The coupled time-dependent Schrödinger equations for an electron and longitudinal-optical phonons are solved numerically within a mean-field approximation. Phonon-induced electron localization is observed. A magnetic field reduces the buildup time of electron probability density in the dots, but increases the decay time associated with the resonant tunneling. Inelastic processes increase the decay time, but their effect on the buildup time depends on the strength of the magnetic field.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 10
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2569-2571 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A quantum-dynamics (QD) simulation scheme is developed to study highly nonlinear electron dynamics far from equilibrium. The time-dependent density functional theory is combined with the Langevin equation to incorporate quantum effects, electron-electron interaction, and dissipation. We perform QD simulations on a massively parallel computer to study the many-electron dynamics in a resonant tunneling diode. The dynamic response of electrons in n+-doped layers on the femtosecond scale is found to have a profound influence on the current-voltage (I-V) characteristic. The resulting time-averaged I-V characteristics are in excellent agreement with experiments.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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