ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Determination of deep-level parameters by a new analysis method of isothermal capacitance transients (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3072-3076 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new method to analyze isothermal capacitance transients of Schottky barriers is proposed. Isothermal capacitance transients, recorded at different temperatures by an automatized measurement system, are analyzed by comparing the capacitance values at the same time but different temperatures. This method is similar to that used in the standard deep-level transient spectroscopy (DLTS), by inverting the role of time and temperature. The main parameters of the deep levels can be obtained as in the DLTS analysis. The analysis method is applied to Mo/GaAs Schottky barriers. Results have been compared with those obtained by standard DLTS analysis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348569
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Ti/GaAs Schottky barriers prepared by ion beam sputtering (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4966-4971 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky barrier diodes of Ti on n-GaAs wafers were made by means of an ion beam sputtering (IBS) system under various sputtering conditions. We have investigated Schottky diode parameters by I–V and C–V measurements, and deep level centers by deep level transient spectroscopy (DLTS). The electrical characteristics are typical of good quality Ti/GaAs Schottky diodes for all samples, although a slight deterioration of the electrical performances has been observed for samples prepared at higher beam voltage. DLTS investigation shows the presence of damage defects in concentration lower than 1 × 1014 cm−3 for all samples with the exception of those prepared at higher beam voltage. Such low concentration of defects introduced by the sputtering deposition shows that IBS can be a very useful technique to prepare Schottky barriers on GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350594
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Dual-ion-beam sputter deposition of TiN films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7360-7362 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A dual-ion-beam technique for the deposition of TiN thin films is described. The metal-atom flux is supplied by sputtering a titanium target with an inert ion beam, while the reactive flux is supplied directly to the growing film by a low-energy ion beam. Results are presented for titanium films deposited at room temperature under a range of N+2 ion bombardment to form TiN. Analysis gives the incorporation of nitrogen, the background gas contamination, and the optical and electrical properties of TiN films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347596
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Nanoscale compositional fluctuations in multiple InGaAs/GaAs quantum wires (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2261-2264 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An accurate analysis of nanoscale compositional fluctuations in InGaAs/GaAs quantum wires grown by metalorganic chemical vapor deposition on V-grooved substrates was performed by means of high-spatial-resolution transmission electron microscopy techniques. Small In fluctuations (2%–3% excess indium), spatially localized over approximately 5 nm, were detected and related to changes in the photoluminescence and photoluminescence excitation spectra. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372170
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Structural analysis of ZnS/GaAs heterostructures grown by hydrogen transport vapor-phase epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2429-2434 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural characterization of ZnS epilayers grown by hydrogen transport vapor-phase epitaxy on (100)-oriented GaAs substrates is reported. X-ray-diffraction measurements in both double-axis (DA) and single-axis modes were performed to determine the residual strain tensor and the strain temperature dependence of the epilayer in the range between 25 and 650 °C. From the analysis of the data obtained by DA measurements of several symmetric Bragg reflections at different azimuth angles and several asymmetric reflections recorded in different geometries, an orthorhombic distortion of the ZnS lattice was found. The crystallographic symmetry could be explained by an asymmetric distribution of the misfit dislocation density in the interface plane along the [011] and [01¯1] directions. The temperature dependence measurements of the strain tensor components between room temperature and the growth temperature (650 °C) allowed determination of the thermal misfit between ZnS and GaAs and the linear thermal-expansion coefficient of ZnS. Finally, triple-crystal diffractometry and secondary-ion-mass spectrometry were used to investigate the chemical nature of the ZnS-GaAs interface. The results indicate the presence of an interdiffused ZnS-GaAs interface region, whose occurrence turns out to be associated with the initial defect structure of the substrate surface before the growth. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358769
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Charge trapping and current–voltage bistability in InGaAs quantum wires (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 936-940 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a clear evidence of bistability in the current–voltage characteristics of p-i-n heterostructures containing InGaAs V-shaped quantum wires. The observed phenomenon is explained in the framework of a single carrier transport model in which the quantum wires act like traps for the vertical current. The charge trapping phenomenon is indeed demonstrated by temperature-dependent photocurrent experiments. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362904
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Erratum: "Inhomogeneous strain relaxation and defect distribution of ZnTe layers deposited on (110)GaAs by metalorganic vapor phase epitaxy'' [J. Appl. Phys. 78, 229 (1995)] (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 562-562 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362719
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Structural and optical studies of InxGa1−xAs/GaAs multiple quantum wells (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 482-489 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained multiple quantum wells of InxGa1−xAs/GaAs were grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) and characterized by secondary ion mass spectrometry, x-ray diffraction, and optical spectroscopy. The structural analysis demonstrates the excellent control of the interface morphology and composition achieved by MOCVD growth. Temperature dependent optical absorption, photoluminescence, and magnetotransmission were used to evaluate the well-width dependence of the major excitonic properties. The samples show sharp excitonic resonances with distinct excited states evolving into Landau-type excited states in high magnetic field. The well-width dependence of the excitonic eigenstates and of the exciton binding energy as well reproduced by envelope function and variational calculations, also in the presence of external electric field. Finally, nonlinear electro-optic modulation induced by the quantum confined Stark effect is demonstrated in a Schottky diode with extremely low switching threshold. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362751
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Inhomogeneous strain relaxation and defect distribution of ZnTe layers deposited on (100)GaAs by metalorganic vapor phase epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 229-235 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural characterization of ZnTe epilayers grown on (100)GaAs by metalorganic vapor-phase epitaxy is reported. A detailed study of the ZnTe/GaAs heterostructure based on both high-resolution and conventional electron microscopy and ion channeling Rutherford backscattering spectrometry allows correlation of the type and spatial distribution of the extended defects occurring at or close to the ZnTe/GaAs interface with the amount of residual lattice strain into the ZnTe epilayers. Both pure edge Lomer and 60°-mixed misfit dislocations were identified at the interface along with partial dislocations bounding stacking faults, their overall density and distance distribution indicating the occurrence of a residual compressive strain at the heterostructure interface. By comparing this interface strain to the corresponding surface value of the same samples the occurrence of an inhomogeneous strain relaxation along the growth direction is clearly demonstrated. It is shown that such a strain gradient should be entirely ascribed to threading dislocations occurring into the ZnTe epilayers, their distribution being strictly correlated to the amount of residual strain along the epilayer growth direction. The conclusions are further supported by the analysis of the ZnTe surface strain, whose dependence on the epilayer thickness is consistent with that expected on the basis of a phenomenological model for the epilayer residual strain relaxation by threading dislocations. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360656
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Physical properties of osmium doped tin oxide thin films (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2369-2371 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The sol-gel process has been used to prepare osmium doped tin oxide thin films. The energy gap and refractive index were evaluated from optical measurements. Electrical characterization has been performed in a controlled atmosphere in order to investigate the influence of methane on the electrical conductance. New results have been obtained that make tin oxide doped with osmium a very interesting material for fabrication of low power consumption sensors for methane detection. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366982
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...