Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
84 (1998), S. 6174-6177
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
CdO thin films were deposited on silica glass substrates by rf sputtering. The orientation of the crystal axis in the films was changed by varying the sputtering conditions. The (100)-oriented films were annealed under various conditions to change the carrier concentration. A blueshift of the optical absorption edge was observed as the carrier concentration increased, and band-gap widening was analyzed using the Burstein–Moss formula. We found that the intrinsic direct-band-gap Eg0 (Γ15–Γ1 gap) and the reduced effective mass mvc* are 2.22±0.01 eV and (0.274±0.013)m0, respectively, at room temperature. The results are discussed in relation to the band structure of CdO. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.368933
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