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  • 1
    Electronic Resource
    Electronic Resource
    Growth of diamond thin films by spiral hollow cathode plasma-assisted chemical vapor deposition (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4676-4684 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A direct current spiral hollow cathode which combines hot-filament, electron-beam, and plasma-assisted chemical vapor deposition mechanisms has been developed to grow diamond crystallites and continuous thin films from CH4/H2 [/Ar] gas mixtures. A comprehensive study of system parameters such as deposition time, gas pressure, susceptor temperature, methane concentration, distance between the cathode and the substrate, substrate material, and surface treatment indicates that diamond deposition in such a reaction is a composite process. By varying the susceptor temperature and gas pressure during deposition, the deposition process can be tailored in favor of the synthesis of structurally uniform diamond thin films. The deposits, obtained at a growth rate of about 1 μm/h, have been characterized using scanning electron microscopy, Raman spectroscopy, Auger spectroscopy, x-ray diffraction, reflection high-energy electron diffraction, infrared absorption spectroscopy, and current-voltage curve plotting.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343824
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  • 2
    Electronic Resource
    Electronic Resource
    Charge trapping/generation and reliability for high-performance tantalum oxide capacitors (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4837-4842 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Charge trapping/generation behavior and reliability of recently developed high-performance sputtered/anodized tantalum oxide films in structures of Al–tantalum-oxide–Ta metal-insulator-metal (MIM) capacitors under constant current stress are studied by observing the voltage-time and time-to-breakdown characteristics in comparison with those of the usual tantalum oxide MIM capacitors prepared by either anodization or reactive sputtering. The dominant charge trapping/generation in the anodized tantalum oxide films is either slow electron trapping under current stress on the Ta bottom electrodes or positive charge generation under current stress on the Al top electrodes. Positive charge generation due to oxygen vacancies after fast electron trapping is dominant in the sputtered tantalum oxide films which show defect-related breakdown phenomena. The sputtered/anodized tantalum oxide demonstrates much superior reliability because of its less charge trapping/generation and better enduring property under charge injection compared with the anodized or the sputtered tantalum oxide films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343799
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  • 3
    Electronic Resource
    Electronic Resource
    Multiple flame deposition of diamond films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2645-2647 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A multiple flame burner has been used to deposit diamond films of up to 20 mm in diameter from an oxygen-acetylene mixture. The burner consists of nine equally spaced linear holes each sustaining its own flame and rotates under a water-cooled substrate. The diamond film's quality is characterized as a function of its radial distance from the center of the film by scanning electron microscopy, Raman spectroscopy, and photoluminescence spectroscopy. Typical films exhibit variations in thickness and crystal structure with an increasing graphitic component present towards the edge of the film as evidenced by Raman analysis. Photoluminescence spectra exhibit defect bands at 1.95 eV present near the outer edge of the film and at 2.16 eV present near the center of the film. These luminescence bands are discussed and attributed to defects induced from the flame's chemistry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104795
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  • 4
    Electronic Resource
    Electronic Resource
    Low dark current, planar In0.4Ga0.6As p-i-n photodiode prepared by molecular beam epitaxy growth on GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2396-2398 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report here the successful fabrication of a planar, low dark current, and high sensitivity In0.4Ga0.6As p-i-n photodiode fabricated on a semi-insulating GaAs substrate with the aid of a multistage strain-relief buffer system. Without using surface passivation and anti-reflection coatings, the detector has a quantum efficiency of 42% and a peak responsivity of 0.45 A/W at 1.3 μm wavelength. The reverse leakage current for the mesa-etched photodiode with an active area of 2×10−4 cm2 is 5×10−9 A at −5 V, and the breakdown voltage exceeds 25 V.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104882
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  • 5
    Electronic Resource
    Electronic Resource
    Growth of diamond films on silicon from an oxygen-acetylene flame (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 134-136 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Clear diamond films have been deposited on silicon substrates by a tilted oxygen-acetylene flame operating at one atmosphere pressure in air. High quality diamond films are formed by well-defined diamond crystallites in the octahedral and cubooctahedral shapes as well as of intermediate forms. Raman spectra of the flame deposited diamond display a peak very close to that for natural diamond with little or no broad band corresponding to graphitic bonding as well as a peak corresponding to the underlying silicon substrate. This shows that the diamond is transparent to visible light and that there are little or no interfacial materials other than silicon and diamond. Using an O2 :C2 H2 volume ratio around 0.98 high quality diamond films thicker than 10 μm have been grown on silicon in less than 30 min by an oxygen-acetylene flame that is aimed at the silicon substrate at about 70° with respect to the direction normal to the silicon surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103052
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  • 6
    Electronic Resource
    Electronic Resource
    High-temperature superconductor opening switch (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 949-950 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A jitter-free, repetitive opening switch made of YBa2Cu3O7−x high-temperature superconductor is demonstrated. The switch conducts electrical current at no loss when it is superconducting. A pulse or pulse train of magnetic field on the order of 100 G causes the transition of the switch from the superconducting state to the resistive normal state and forces current to flow through a load resistor that is connected in parallel with the switch. Repetitive operation of this switch at rep rates higher than 1 kHz has been demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100816
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  • 7
    Electronic Resource
    Electronic Resource
    High performance silver ohmic contacts to YBa2Cu3O6+x superconductors (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 155-156 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silver-YBa2Cu3O6+x superconductor ohmic contacts with specific contact resistance on the order of 10−8 Ω cm2 have been demonstrated. Alloying the contacts in O2 at 500 °C enhances the contact conductivity by two orders of magnitude.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99036
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  • 8
    Electronic Resource
    Electronic Resource
    High electrical resistivity diamond films deposited from an oxyacetylene flame (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 789-791 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond films with electrical resistivity as high as 1014 Ω cm have been deposited on silicon, molybdenum, and other foreign substrates from an oxyacetylene flame. Exposure of the highly resistive diamond films to a hydrogen plasma leads to the decrease of the electrical resistivity by several orders of magnitude. Low level incorporation of atomic hydrogen in the oxyacetylene flame into the diamond film under the flame deposition conditions is believed to be the cause of the high electrical resistivity of the flame-grown diamond films. In contrast to the relatively low resistivity of diamond films deposited in a hydrogen/methane plasma, flame deposition provides a means of growing electrically insulating diamond thin films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103421
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  • 9
    Electronic Resource
    Electronic Resource
    Spiral hollow cathode plasma-assisted diamond deposition (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2326-2327 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality diamond films have been deposited on silicon and sapphire by means of a combined hot filament/electron beam/plasma-assisted chemical vapor deposition technique. A spiral tantalum foil is used as the hot cathode to generate a high-current dc discharge at a low sustaining voltage. Gas mixtures consisting of methane, hydrogen, and argon flowing through the spiral cathode towards the anode are effectively decomposed by the hot cathode and the high-density plasma. Diamond particles and films, grown at a rate between 0.5 and 5 μm/h, have been characterized by scanning electron microscopy, x-ray diffraction, and Raman spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100268
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  • 10
    Electronic Resource
    Electronic Resource
    Very low friction for diamond sliding on diamond in water (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3586-3588 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter reports the lowest coefficient of friction measured for diamond sliding on diamond. When a natural diamond stylus with a spherical tip about 50 μm in diameter slides on a polished polycrystalline chemically vapor deposited diamond film in water at a speed of 0.05 mm/s under a load of 50 g, the coefficient of friction falls to ∼0.001. This clearly shows the effectiveness of water for lubricating diamond sliding on diamond.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110762
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