Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
83 (1998), S. 3552-3555
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report the diffraction anomalous near-edge structure (DANES) of a nominally lattice matched GaxIn1−xP/GaAs (x=0.51) heteroepitaxial layer, grown by metal organic chemical vapor deposition, which shows long range ordering in the cationic sublattice along the 〈111〉 direction. DANES spectra, originating from the 004 reflections of the substrate and of the epi-layer and that from the "forbidden" −5/2 5/2 −5/2 reflection of the superstructure, have been recorded at the Ga K edge. A full theoretical simulation, based on the kinematic formalism, largely agrees with the experimental data. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.366570
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