ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Ambient scanning tunneling spectroscopy (STS) of n- and p-doped GaAs (110) and (100) surfaces, prepared with a stable, electrically transparent surface oxide, reveals that the current-voltage (I-V) characteristics of these surfaces are essentially identical to the I-V properties of the free (110) surface cleaved in ultrahigh vacuum. These results demonstrate for the first time that: (1) meaningful STS spectra of GaAs surfaces can be obtained in air, (2) the passivating layer, consisting of a stable, ultrathin oxide [J. A. Dagata, W. Tseng, J. Bennett, J. Schneir, and H. H. Harary, Appl. Phys. Lett. 59, 3288 (1991)], allows the scanning tunneling microscopy tip to probe the bulk electrical properties of the semiconductor, and (3) quantitative doping information, 1015〈NA, ND〈1019 cm−3, can be extracted from the STS data.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.108865
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