ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
Collection
Language
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3535-3537 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe an approach to assess the quality of III-nitride thin films using depth-resolved cathodoluminescence (CL) microanalysis. In this procedure, the depth-resolved peak shift due to self-absorption of the near-edge CL emission is calculated using Monte Carlo simulation techniques and compared with measured peak shift values. A discrepancy between the experimental and modeled data indicates the presence of an exciton peak shift due to strain, near-edge defects, and alloy fluctuation. Depth-resolved peak shift analysis of the near-edge CL from an undoped 700 nm thick Al0.057Ga0.943N film grown on a (0001) Al2O3 substrate is presented to demonstrate the utility of the method. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4479-4491 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that if charging caused by electron irradiation of an insulator is controlled by a defocused flux of soft-landing positive ions, secondary electron (SE) images can contain contrast due to lateral variations in (i) changes in the SE yield caused by subsurface trapped charge and (ii) the SE-ion recombination rate. Both contrast mechanisms can provide information on microscopic variations in dielectric properties. We present a model of SE contrast formation that accounts for localized charging and the effects of gas ions on the SE emission process, emitted electrons above the sample surface, and subsurface trapped charge. The model explains the ion flux dependence of charge-induced SE contrast, an increase in the sensitivity to surface contrast observed in SE images of charged dielectrics, and yields procedures for identification of contrast produced by localized sample charging. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4492-4499 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the properties of electric fields generated as a result of electron irradiation of dielectrics in a low vacuum scanning electron microscope. Individual field components produced by (i) ionized gas molecules located outside the sample surface and (ii) subsurface trapped charge were detected by measurements of changes in (i) primary electron landing energy and (ii) secondary electron (SE) emission current, respectively. The results provide experimental evidence for a recently proposed model of field-enhanced SE emission from electron irradiated insulators in a low vacuum environment [Toth et al., J. Appl. Phys. 91, 4479 (2002)]. Errors introduced into x-ray microanalysis by the electric fields generated by ionized gas molecules can be alleviated by minimizing the steady state ion concentration by the provision of efficient ion neutralization routes. It is demonstrated how this can be achieved using simple sample–electrode geometries. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Inc
    Journal of metamorphic geology 15 (1997), S. 0 
    ISSN: 1525-1314
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences
    Notes: Average crystallite size and mean-square strain of illite in rock specimens and clay separates were measured independently in TEM images and by single-line Fourier (Voigt method) profile analysis of the c. 1 nm peak of XRD patterns for a prograde sequence of pelitic rocks (illite crystallinity indices=0.17–0.58°Δ2θ) from the Gaspé Peninsula, Quebec. The TEM-determined crystallite sizes in clay separates approximate those determined by Fourier profile analyses and those calculated from illite crystallinity indices by the Scherrer equation, with the exception of the diagenetic sample. The crystallite sizes and mean-square strains of illite in rock samples exhibit a trend similar to that determined by profile analyses, but the average crystallite sizes are up to five times larger than those measured for clay separates.TEM images show that all rock samples have a wide range of crystallite sizes, and the proportions of larger crystallites increase with metamorphic grade. The diagenetic illite is defect-rich, fine-grained (mean thickness by volume=c. 70 nm), 1Md material. Anchizonal illite tends to occur as separate aggregates of small 1Md and larger 2M1 crystals (c. 200 nm), comprising arrays of subparallel coalescing packets. The epizone sample has thick (c. 400 nm), defect-free crystals of muscovite occurring in stacks of parallel layers, or subhedral crystals intergrown with large-angle boundaries. Cleaved crystals that are free of intracrystalline layer terminations are dominant in clay separates of all samples, having ranges of smaller sizes with volume-average thicknesses of c. 43, 43, and 81 nm (c. 14, 28, 67 nm by the Voigt method), respectively, for the three zones.The results suggest that illite crystallinity indices do not provide a direct measure of a single microstructural state of illite in rocks, although they yield consistent limits for average crystallite sizes for the anchizone (23 & 48 nm here). Therefore, they serve as a general parameter of the degree of recrystallization on a relative basis, in part because the contributions of all peak-broadening variables (mixed layering, size and strain) decrease regularly with prograde regional metamorphism of pelites. The microstructural changes caused by rock disaggregation are probably a function of those variables as well. The data collectively demonstrate a trend from metastable, defect-rich, small crystals towards a stable assemblage of larger, defect-free crystals, through dissolution of strained crystals and neocrystallization, consistent with the Ostwald step rule.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1114-1116 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the results of a depth-resolved cathodoluminescence (CL) and transmission electron microscopy study of autodoped GaN grown on sapphire. Depth-resolved CL analysis can be used for depth profiling of the yellow luminescence (YL) center concentration which was found to increase with depth. The results are consistent with the (ON–VGa)2− complex model of YL centers [J. Neugebauer and C. G. Van de Walle, Appl. Phys. Lett. 69, 503 (1996) and T. Mattila and R. M. Nieminen, Phys. Rev. B 55, 9571 (1996)]. Depth profiling of the near-edge emission in GaN layers thicker than ∼0.5 μm is not possible due to strong self-absorption. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3983-3985 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Trace levels of Cr impurities in epitaxial GaN grown on sapphire substrates were investigated using cathodoluminescence (CL) spectroscopy. CL emissions characteristic of Cr in an octahedral crystal field were observed from β−Ga2O3 overlayers produced on GaN by post-growth thermal annealing in dry O2. Cr luminescence was also observed from the sapphire substrates, a likely source of the Cr contaminant. The presented results illustrate the use of β−Ga2O3 overlayers as high sensitivity indicators of the presence of Cr in GaN. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 76-78 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a method for imaging depletion layers using the gaseous secondary electron detector (GSED) employed in environmental scanning electron microscopes. GSED images of a p-n junction were obtained from a Si P+PN power diode. Behavior of the junction contrast as a function of imaging conditions is unrelated to reported GSED contrast formation mechanisms [ A. L. Fletcher, B. L. Thiel, and A. M. Donald, J. Phys. D 30, 2249 (1997)]. Optimum imaging conditions are presented, and the contrast behavior is interpreted in terms of a previously unreported induced current component in GSED images. The presented technique is unique as it will enable imaging of depletion layers in uncoated semiconductor/oxide devices in controlled gaseous environments at elevated specimen temperatures. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1342-1344 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present direct experimental evidence for a field assisted component in images acquired using the gaseous secondary electron detector (GSED) employed in environmental scanning electron microscopes. Enhanced secondary electron (SE) emission was observed in GSED images of epitaxial GaN bombarded with MeV He ions. The increase in SE emission is attributed to an electric field generated by electrons trapped at defects produced by ion implantation. The presence of nonradiative recombination centers and of trapped charge in implanted GaN was established by cathodoluminescence spectroscopy and energy dispersive x-ray spectrometry. The field assisted SE component is distinguishable from the "normal" GSED signal by characteristic pressure and temperature dependencies. The presented results demonstrate the utility of the GSED for imaging charge trap distributions in semiconductors. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Biochimica et Biophysica Acta (BBA)/Lipids and Lipid Metabolism 1002 (1989), S. 101-108 
    ISSN: 0005-2760
    Keywords: (Human) ; Decidua ; Glutathione ; Prostaglandin ; Prostanoid ; Thromboxane
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Medicine , Physics
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Biochimica et Biophysica Acta (BBA)/Lipids and Lipid Metabolism 750 (1983), S. 481-489 
    ISSN: 0005-2760
    Keywords: (Chicken) ; Adrenaline ; Glutathione ; Oviposition ; Prostaglandin ; Thromboxane
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Medicine , Physics
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...