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  • 1
    Electronic Resource
    Electronic Resource
    Recording performance of submicron track width thin film heads : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5645-5647 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This spin-stand measurement study focuses on recording characteristics at submicron scale track width. The pole tips of a set of identical thin film heads were trimmed from the air-bearing surface by focused ion beam etching. A set of thin film heads with track widths ranging from W=2 μm to W=0.5 μm were produced. Recording experiments were performed on a high precision spin-stand tester using these heads. Both on-track and off-track performances were studied and analyzed. As the track width is scaled down, degrading of recording performance is observed. When the width of a recording head is decreased, the onset of partial erasure occurs at a lower density, and the noise power per unit head track width increases. Further investigation on the track profiles reveals that the extent of partial erasure is higher at the track edge as density increases, and this phenomenon is more pronounced in narrower track width heads. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361850
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  • 2
    Electronic Resource
    Electronic Resource
    Dependence of supercooling of a liquid on its overheating (1997)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 107 (1997), S. 7964-7966 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The degree of overheating of a melt often plays a significant role in determining its supercooling behavior and thus the nucleation and growth of crystals and their qualities. However, the relationship between the level of melt overheating and the resulting degree of supercooling is far from being understood. It is demonstrated that the dependence of the degree of supercooling on the level of melt overheating for bismuth is a function of the duration of melt overheating above its melting point. Depending on the duration, the degree of supercooling can increase either discontinuously or continuously with the level of melt overheating. These observations, which can be linked to the transient evolution of short-range structures during melting and solidification, suggest that the similar observations should also be observable for substances exhibiting substantially different short-range structures in the solid and liquid state. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.475057
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  • 3
    Electronic Resource
    Electronic Resource
    The spin flop of synthetic antiferromagnetic films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5055-5057 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spin flop of synthetic antiferromagnetic pinned layers (SAF), under a magnetic field has been theoretically predicted and recently reported [J. G. Zhu and Y. Zheng, IEEE Trans. Magn. 34, 1063 (1998); J. G. Zhu, IEEE Trans. Magn. 35, 655 (1999)]. However, no experimental data have yet being reported to confirm the theoretical prediction. This article will provide direct experimental evidence to confirm the spin flop phenomenon in SAF layers. A spin valve, [CoFe/NiFe]/Cu/[CoFe(II)/Ru/CoFe(I)]/IrMn, was used to verify the spin flop in SAF layers. The exchange bias direction of CoFe(I)/IrMn was introduced by a magnetic annealing process at 225 °C with a field strength of Han(10 kOe) and the exchange bias direction was found parallel to the magnetic field. These samples serve as the reference for the remaining experiments. By magnetic annealing the reference samples at 225 °C with lower magnetic fields, we found that the magnetic field threshold for SAF spin flop is about 1 kOe. When the field is further increased, the spins of CoFe(I) and CoFe(II) scissor toward the applied magnetic field axis and the moment of the SAF reaches saturation when the applied field is equal to or greater than 10 kOe. Thus the above experiments demonstrate the flop behavior of the SAF. It also provides direct evidence that the exchange bias direction between a ferro/antiferromagnetic interface is determined by the magnetization of the ferromagnetic layer, not by the magnetic annealing field. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373246
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  • 4
    Electronic Resource
    Electronic Resource
    Characterization of ion beam and magnetron sputtered thin Ta/NiFe films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5780-5782 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin Ta/NiFe films were deposited using ion beam deposition (IBD), pulsed, and static magnetron sputtering techniques. These NiFe films show anisotropy field values ∼4 Oe, easy axis coercivities ≤1 Oe, and hard axis coercivities ≤0.3 Oe. IBD films exhibit higher magnetoresistance ratios (ΔR/R), while little difference is noted between different deposition techniques in the sheet resistance of NiFe films. A ΔR/R value of 1.8% has been measured for a 90 Å IBD NiFe films. X-ray diffraction measurements indicate that NiFe films of the same thickness have about the same grain size regardless of deposition technique, however, IBD films exhibit superior (111) texture and crystallinity. Our results clearly indicate that the superior magnetic properties of thin IBD Ta/NiFe films are a result of high crystallographic quality of these films. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370124
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  • 5
    Electronic Resource
    Electronic Resource
    Ion beam sputtered spin-valve films with improved giant magnetoresistance response (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4454-4456 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A large value of giant magnetoresistance ΔR/R=9% with an exchange field Hex=350 Oe has been measured from simple NiFe/CoFe/Cu/CoFe/IrMn top spin-valve films prepared by ion beam deposition (IBD) techniques. The exchange biasing was greatly enhanced when a synthetic pinned layer, CoFe/Ru/CoFe, is used in the spin-valve structures. Apparent exchange field values in excess of 2000 Oe and ΔR/R values above 8% have been obtained in synthetic spin-valve films. These IBD spin-valve films show excellent thermal stability and they are suitable for the applications in high density magnetic recording heads. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370372
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of angular biasing on the magnetic performance of spin-valve devices (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4976-4978 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In spin-valve devices, hard magnets are placed at both ends of the sensor to suppress Barkhausen noise. As a consequence, the signal amplitude decreases. We have shown that, by initializing the magnets in a direction other than along the free layer easy axis, it is possible to increase the magnetoresistance ratio by more than a factor of 2. The ΔR/R of similar devices without permanent magnets cannot be reached by this method. This angular initialization may have technological applications. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370063
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  • 7
    Electronic Resource
    Electronic Resource
    Exchange biasing and thermal stability of CoFe/PtPdMn films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4915-4917 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two sets of PtPdMn exchange biased films Ta 50 Å/CoFe 100 Å/PtPdMn (tAF) Å/Ta 50 Å, with PtPdMn thickness, tAF=350, 600 Å, were deposited on Si substrates by dc magnetron sputtering techniques. After magnetic annealing, these two sets of films exhibited values of exchange bias field, Hex=229 and 254 Oe, respectively. The PtPdMn layer was then thinned to various thicknesses from 600 down to 50 Å by ion beam etching. Hex does not retain its original value. It decreases with decreasing tAF and becomes zero at tAF∼75 Å. In addition, we have observed that the training effect or the anomalous hysteresis loss becomes more pronounced with decreasing tAF. This confirms that not only face-centered-tetragonal phase but, more critically, tAF plays role in determining exchange biasing and its thermal stability. The blocking temperature, TB, appears unaffected by the thinning of the PtPdMn layer, and no apparent change occurs in the local blocking temperature distribution, as suggested by the finite size effect. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373201
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  • 8
    Electronic Resource
    Electronic Resource
    Magnetic properties of ultrathin NiFe and CoFe films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6618-6620 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, we report the magnetic properties of ultrathin (15–200 Å) NiFe and CoFe films deposited using ion beam deposition techniques. They are symmetrically sandwiched between Ta, Cu, or Ta/Cu under and capping layers. NiFe and CoFe films grown between Ta/Cu and Cu/Ta bilayers exhibit the smallest magnetic thickness loss of about 1 Å. This interfacial magnetic dead layer thickness, t0, is about 5 Å for Cu-sandwiched films and about 15 Å for Ta-sandwiched films. As the film thickness becomes thinner than 100 Å, the magnetic properties are found to be more sensitive to the choice of material and growth environment. CoFe films show an interfacial contribution, λi, about ten times larger than that for NiFe films. Among others, NiFe and CoFe films sandwiched by Ta/Cu and Cu/Ta bilayers exhibit the smallest values of λi. The magnetic anisotropy in Ta-sandwiched CoFe films appears to be predominantly magnetoelastic in nature. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372789
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  • 9
    Electronic Resource
    Electronic Resource
    Magnetic properties of ion beam deposited CoCrPt hard bias films for magnetoresistive heads (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5843-5845 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion beam deposition techniques have been employed to prepare Cr/CoCrPt bilayers for hard bias applications in giant/anisotropic magnetoresistive recording heads. The bilayers were deposited at different deposition angles, which is defined as the angle between deposition beam direction and substrate plane. The magnetic properties of CoCrPt films, such as coercivity (Hc), remnant magnetization–thickness product (Mrt), and coercive squareness (S*) as a function of CoCrPt layer thickness and deposition angle have been studied and correlated to film microstructures. Typical values of Hc, Mrt, and S* for a Cr100 Å/CoCrPt490 Å bilayer deposited at 42° are 1580 Oe, 2.90 memu/cm2, and 0.90, respectively. The increase in Mrt with increasing CoCrPt layer thickness at a fixed deposition angle is accompanied by a linear decrease in Hc. We have observed, however, that for the same bilayer geometry both Hc and Mrt of CoCrPt layer increase with decreasing deposition angle, whereas S* remains almost unchanged. High angle x-ray diffraction measurements indicate that the hexagonal-close-packed (101¯0) crystallographic orientation of CoCrPt films is enhanced with decreasing deposition angles. This suggests that the improvement in both Mrt and Hc for CoCrPt films deposited with decreasing deposition angle results from an enhancement in in-plane c-axis texture, and crystallinity. This could be attributed to an enhancement in in-plane adatom mobility at low deposition angles. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369935
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  • 10
    Electronic Resource
    Electronic Resource
    Investigations on nanocrystalline Fe78B13Si9 alloys by positron annihilation spectroscopy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5124-5129 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline Fe78B13Si9 alloys with nanoscale grain sizes prepared by the crystallization method have been studied by positron lifetime and Doppler-broadened line-shape measurements. The results obtained are different from those on amorphous or coarse-grained crystalline alloys with the same composition. When the grain sizes are clearly smaller than the mean positron diffusion length (L+(approximately-equal-to)100 nm), saturation trapping and annihilation of the positrons in the samples should occur at traps within the interfaces. There are two kinds of defects in the interfaces of the nanocrystalline FeBSi alloys, i.e., the free volumes (the size of which is slightly smaller than that of the amorphous counterpart) and the microvoids. The dependence of grain sizes on the type of interface defects and structure-sensitive properties has also been studied by positron spectroscopy. The measurements and comparison of the mean positron lifetime τ¯ and the Doppler parameter S on the nanocrystalline, amorphous, and coarse-grained crystalline alloys have given a satisfactory explanation for the relationship between the structure-sensitive properties, grain sizes, and crystalline states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352042
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