Publication Date:
2019-07-13
Description:
Single event latchup (SEL) in a 65 nm CMOS SRAM technology is observed and sensitivity is shown to be a strong function of lateral beam orientation, angle of incidence, and temperature. The significance of these results are discussed and the foundation for a predictive model of SEL is laid out for use with the MRED tool.
Keywords:
Nuclear Physics
Type:
International Electrical and Electronics Engineering (IEEE) Nuclear and Space Radiation Effects Conference (NSREC); Jul 14, 2008 - Jul 18, 2008; Tucson, AZ; United States
Format:
application/pdf
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