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  • 1
    Electronic Resource
    Electronic Resource
    Pulsed photoconductivity of chlorophyll-a films in contact with a nonpolar solution (1975)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 79 (1975), S. 2723-2728 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100592a004
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  • 2
    Electronic Resource
    Electronic Resource
    Interfacial chemistry of Alq3 and LiF with reactive metals (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2756-2765 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic structure and chemistry of interfaces between tris-(8-hydroxyquinoline) aluminum (Alq3) and representative group IA and IIA metals, Al, and Al/LiF have been studied by x-ray and ultraviolet photoelectron spectroscopies. Quantum-chemical calculations at the density functional theory level predict that the Alq3 radical anion is formed upon reaction with the alkali metals. In this case, up to three metal atoms can react with a given Alq3 molecule to form the trivalent anion. The anion formation results in a splitting of the N 1s core level and formation of a new feature in the previously forbidden energy gap. Virtually identical spectra are observed in the Al/LiF/Alq3 system, leading to the conclusion that the radical anion is also formed when all three of these constituents are present. This is support by a simple thermodynamic model based on bulk heats of formation. In the absence of LiF or similar material, the reaction of Al with Alq3 appears to be destructive, with the deposited Al reacting directly with the quinolate oxygen. We proposed that in those circumstances where the radical anion is formed, it and not the cathode metal are responsible for the electron injection properties. This is borne out by producing excellent injecting contacts when Ag and Au are used as the metallic component of the cathode structure. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1324681
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of treated indium–tin–oxide surfaces used in electroluminescent devices (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1688-1692 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of oxidative and reductive treatments of indium–tin–oxide (ITO) on the performance of electroluminescent devices is presented. The improvement in device performance is correlated with the surface chemical composition and work function. The work function is shown to be largely determined by the surface oxygen concentration. Oxygen-glow discharge or ultraviolet–ozone treatments increase the surface oxygen concentration and work function in a strongly correlated manner. High temperature, vacuum annealing reduces both the surface oxygen and work function. With oxidation the occupied, density of states (DOS) at the Fermi level is also greatly reduced. This process is reversible by vacuum annealing and it appears that the oxygen concentration, work function, and DOS can be cycled by repeated oxygen treatments and annealing. These observations are interpreted in terms of the well-known, bulk properties of ITO. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370948
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  • 4
    Electronic Resource
    Electronic Resource
    Enhanced electron injection in organic electroluminescence devices using an Al/LiF electrode (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 152-154 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A bilayer is used as an electrode for organic electroluminescent devices. The bilayer consists of an ultrathin LiF layer adjacent to an electron-transporting layer and an aluminum outerlayer. Devices with the bilayer electrode showed enhanced electron injection and high electroluminescence efficiency as compared with a Mg0.9Ag0.1 cathode. Similar effects were observed when replacing MgO for LiF. The improvements are attributed to band bending of the organic layer in contact with the dielectrics. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118344
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  • 5
    Electronic Resource
    Electronic Resource
    Organic electroluminescent diodes (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 913-915 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel electroluminescent device is constructed using organic materials as the emitting elements. The diode has a double-layer structure of organic thin films, prepared by vapor deposition. Efficient injection of holes and electrons is provided from an indium-tin-oxide anode and an alloyed Mg:Ag cathode. Electron-hole recombination and green electroluminescent emission are confined near the organic interface region. High external quantum efficiency (1% photon/electron), luminous efficiency (1.5 lm/W), and brightness (〉1000 cd/m2) are achievable at a driving voltage below 10 V.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98799
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  • 6
    Electronic Resource
    Electronic Resource
    Electroluminescence of doped organic thin films (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3610-3616 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electroluminescent (EL) devices are constructed using multilayer organic thin films. The basic structure consists of a hole-transport layer and a luminescent layer. The hole-transport layer is an amorphous diamine film in which the only mobile carrier is the hole. The luminescent layer consists of a host material, 8-hydroxyquinoline aluminum (Alq), which predominantly transports electrons. High radiance has been achieved at an operating voltage of less than 10 V. By doping the Alq layer with highly fluorescent molecules, the EL efficiency has been improved by about a factor of 2 in comparison with the undoped cell. Representative dopants are coumarins and DCMs. The EL quantum efficiency of the doped system is about 2.5%, photon/electron. The EL colors can be readily tuned from the blue-green to orange-red by a suitable choice of dopants as well as by changing the concentration of the dopant. In the doped system the electron-hole recombination and emission zones can be confined to about 50 A(ring) near the hole-transport interface. In the undoped Alq, the EL emission zone is considerably larger due to exciton diffusion. The multilayer doped EL structure offers a simple means for the direct determination of exciton diffusion length.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343409
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  • 7
    Electronic Resource
    Electronic Resource
    Doped organic electroluminescent devices with improved stability (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1665-1667 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Remarkable improvement in stability has been demonstrated in an organic electroluminescent (EL) device using a doped emitter consisting of 8-hydroxyquinoline aluminum (Alq) as the host and N,N-dimethylquinacridone (DMQA) as the emissive dopant. A luminance half-life on the order of about 7500 h has been achieved in the DMQA/Alq EL device, operating under a constant current of 20 mA/cm2 and starting at a high luminance of 1400 cd/m2. The improved stability was attributed to the elimination of intermolecular hydrogen bonding between the dopant molecules. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118664
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  • 8
    Electronic Resource
    Electronic Resource
    Bimolecular reactions of singlet excitons in tris(8-hydroxyquinoline) aluminum (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4168-4170 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied singlet excited state dynamics in thin films of tris(8-hydroxyquinoline) aluminum (Alq3), a well known emitter for organic electroluminescent devices. Our experimental results show that bimolecular recombination dominates the singlet exciton decay in pristine films at high intensities, thus decreasing the photoluminescence quantum efficiency and the singlet lifetime. Because of the relatively low carrier concentration at which light emitting diodes operate the electroluminescence efficiency is not affected. The measured rate constant of singlet–singlet annihilation in Alq3 films is γss=(3.5±2.5)×10−11 cm3 s−1. The diffusion coefficient and the diffusion length of singlet excitons estimated from γss are Ds=(1.2±0.8)×10−5 cm2 s−1 and L=98±40 A(ring), respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116974
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  • 9
    Electronic Resource
    Electronic Resource
    Work function of indium tin oxide transparent conductor measured by photoelectron spectroscopy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2699-2701 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We used ultraviolet and x-ray photoelectron spectroscopy (XPS) and (UPS) techniques to directly measure absolute values of vacuum work function of indium tin oxide (ITO) thin films. We obtained a work function of 4.4–4.5 eV which is lower than the commonly cited value. These values do not change substantially by heating and Ar ion sputtering. The atomic concentrations of each element in ITO, measured with XPS, are also quite stable under heat treatment and ion sputtering. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116313
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  • 10
    Electronic Resource
    Electronic Resource
    Interface engineering in preparation of organic surface-emitting diodes (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3209-3211 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface-emitting organic light emitting diode (OLED) was prepared by sputter deposition of indium-tin-oxide on a buffered organic layer structure. Confirming a previous report, a thin film of copper phthalocyanine (CuPc) was found to be a useful buffer layer in preventing sputter damage to the OLED layer structure, particularly the underlying Alq emissive layer. However, the CuPc layer forms an electron-injection barrier with the Alq layer, resulting in increased electron-hole recombination in the nonemissive CuPc layer, and thus a substantial reduction in electroluminescence efficiency. Incorporation of Li at the CuPc/Alq interface was found to reduce the injection barrier at the interface and recover the overall device efficiency with good surface emission characteristics. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124107
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