ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Polycrystalline Al, Mo, Ti, and Ta films deposited on Si wafers were systematically depth profiled by Auger electron spectroscopy using Ar+ and N+2 ions as projectile. In agreement with the traditional concept of reactive sputtering, N+2 sputtering of Al and Mo films textured the surface less, thereby improving depth resolution significantly. N+2-sputtered Ti and Ta films, on the other hand, were characterized by microprojections thickly covering the bombarded area, forming a striking contrast to Ar+-sputtered Ti and Ta displaying less-enhanced surface texturing. As revealed by electron spectroscopy for chemical analysis, the N+2-bombarded surface was nitrided for every material, and the nitride zone was confined to the surface or near-surface for Al and Mo and extended far below the surface for Ti and Ta. It is thus considered that three-dimensional nitridation lay under the enhanced surface texturing observed for N+2-sputtered Ti and Ta.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.348465
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