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  • 1
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    In:  Persoonia - Molecular Phylogeny and Evolution of Fungi (0031-05850) vol.34 (2015) nr.1 p.100
    Publication Date: 2015-07-02
    Description: During a survey of cold-adapted fungi in alpine glaciers on the Qinghai-Tibet Plateau, 1 428 fungal isolates were obtained of which 150 species were preliminary identified. Phoma sclerotioides and Pseudogymnoascus pannorum were the most dominant species. Psychrotolerant species in Helotiales (Leotiomycetes, Ascomycota) were studied in more detail as they represented the most commonly encountered group during this investigation. Two phylogenetic trees were constructed based on the partial large subunit nrDNA (LSU) to infer the taxonomic placements of these strains. Our strains nested in two well-supported major clades, which represented Tetracladium and a previously unknown lineage. The unknown lineage is distant to any other currently known genera in Helotiales. Psychrophila gen. nov. was therefore established to accommodate these strains which are characterised by globose or subglobose conidia formed from phialides on short or reduced conidiophores. Our analysis also showed that an LSU-based phylogeny is insufficient in differentiating strains at species level. Additional analyses using combined sequences of ITS+TEF1+TUB regions were employed to further investigate the phylogenetic relationships of these strains. Together with the recognisable morphological distinctions, six new species (i.e. P. antarctica, P. lutea, P. oli-vacea, T. ellipsoideum, T. globosum and T. psychrophilum) were described. Our preliminary investigation indicates a high diversity of cold-adapted species in nature, and many of them may represent unknown species.
    Keywords: glaciers ; Phoma sclerotioides ; Pseudogymnoascus pannorum ; Psychrophila ; psychrotolerant ; Tetracladium
    Repository Name: National Museum of Natural History, Netherlands
    Type: Article / Letter to the editor
    Format: application/pdf
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  • 2
    Publication Date: 2019-11-04
    Description: JCR Journal
    Description: open
    Keywords: aeronomy ; ionosphere ; 01. Atmosphere::01.02. Ionosphere::01.02.99. General or miscellaneous
    Repository Name: Istituto Nazionale di Geofisica e Vulcanologia (INGV)
    Type: article
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  • 3
    facet.materialart.
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    In:  Persoonia - Molecular Phylogeny and Evolution of Fungi vol. 34 no. 1, pp. 100-112
    Publication Date: 2024-01-12
    Description: During a survey of cold-adapted fungi in alpine glaciers on the Qinghai-Tibet Plateau, 1\xe2\x80\xaf428 fungal isolates were obtained of which 150 species were preliminary identified. Phoma sclerotioides and Pseudogymnoascus pannorum were the most dominant species. Psychrotolerant species in Helotiales (Leotiomycetes, Ascomycota) were studied in more detail as they represented the most commonly encountered group during this investigation. Two phylogenetic trees were constructed based on the partial large subunit nrDNA (LSU) to infer the taxonomic placements of these strains. Our strains nested in two well-supported major clades, which represented Tetracladium and a previously unknown lineage. The unknown lineage is distant to any other currently known genera in Helotiales. Psychrophila gen. nov. was therefore established to accommodate these strains which are characterised by globose or subglobose conidia formed from phialides on short or reduced conidiophores. Our analysis also showed that an LSU-based phylogeny is insufficient in differentiating strains at species level. Additional analyses using combined sequences of ITS+TEF1+TUB regions were employed to further investigate the phylogenetic relationships of these strains. Together with the recognisable morphological distinctions, six new species (i.e. P. antarctica, P. lutea, P. oli-vacea, T. ellipsoideum, T. globosum and T. psychrophilum) were described. Our preliminary investigation indicates a high diversity of cold-adapted species in nature, and many of them may represent unknown species.
    Keywords: glaciers ; Phoma sclerotioides ; Pseudogymnoascus pannorum ; Psychrophila ; psychrotolerant ; Tetracladium
    Repository Name: National Museum of Natural History, Netherlands
    Type: info:eu-repo/semantics/article
    Format: application/pdf
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 78 (1974), S. 2531-2535 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 5
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1368-1372 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaSb/In0.19Ga0.81Sb single quantum well structures have been grown successfully by metalorganic chemical vapor deposition. The conduction band to mj=±3/2 heavy hole (1C-1HH) transition peak was observed in GaSb/In0.19Ga0.81Sb single quantum well (SQW) with the well width of 100–270 A(ring). From the excitation power dependence of the photoluminescence spectra, the 1C-1HH transition peak was still observed at low excitation power, 0.31 W/cm2, indicating that the carrier confinement in the well is good. From the temperature dependence of emission intensity of the 1C-1HH transition, the nonradiative recombination centers were few and less than that of the D°-A (donor-acceptor) transition arising from the GaSb barrier layers at temperatures below 30 K. This indicates the good quality of our SQW structure. The dependence of the 1C-HH transition energy was compared with the theoretical results using a strained model.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1509-1512 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to fabricate high brightness and high efficiency thin-film electroluminescent (EL) devices, the emission characteristics of devices employing low resistivity and high dielectric constant materials, such as radio-frequency-sputtered HfO2 films, have been studied. It was found that the EL device with a glass/indium tin oxide/BaTiO3/ZnS:TbF3/HfO2/Ta2O5/HfO2/Al structure exhibited higher brightness and higher efficiency than the other devices. The highest luminous efficiency (η) and brightness of 0.9 lm/W and 1000 cd/m2, respectively, were obtained at 1-kHz sinusoidal wave voltage excitation. This was mainly due to the insulating layers adjacent to the active layer, which have low resistivity and high dielectric constant. So, it has higher density of interface states and deeper interface states at HfO2–ZnS and BaTiO3–ZnS interfaces.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 826-829 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InGaAs(P)/InP double heterojunction bipolar transistors have been successfully fabricated by inserting an n-type InGaAsP (Eg=0.95 eV) quaternary (0.1 μm, undoped) layer on either side of the base by liquid-phase epitaxy (LPE). As we know, it is the first time to grow this structure by LPE. These devices have been fabricated using a non-self-aligned technology. In this case it can improve the common-emitter current/voltage (IC /VCE) characteristics. Small signal current gain hfe about 100 and dc current gain hFE about 80 at IC=38 mA can be obtained. The ideality factor of emitter-base junction is 1.43.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 56-59 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zn-doped GaSb epilayers grown on GaAs and GaSb substrates by low-pressure metal-organic chemical vapor deposition were studied. Triethylgallium and trimethylantimony were used as Ga and Sb sources, respectively. The carrier concentrations of p-type GaSb epilayers were affected by V/III ratio and growth temperature. Diethylzinc(DEZn) was used as the p-type dopant. The relationship between carrier concentration P and mole fraction [DEZn] is P=K[DEZn]2.3. Photoluminescence for different carrier concentration was compared. There exist two different regions for the carrier concentration versus growth temperature.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2335-2338 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon oxide films (SiOx,0〈x〈2) have been prepared by photolysis of disilane (Si2H6) with nitrous oxide (N2O) at temperature below 200 °C using 2537-A ultraviolet light. Ellipsometric studies prove that the refractive index and etching rate of the photo-oxide films depend on the substrate temperatures and gas ratio. Composition and electrical properties of the interface (SiOx/InSb) are discussed by using Auger electron spectroscopy and metal-oxide-semiconductor capacitors. Hysteresis-free capacitance-voltage characteristics measured at 77 K are attained and the minimum interface state density is only 1.5×1011 cm−2 eV−1.
    Type of Medium: Electronic Resource
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