ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Graphitization of the 6H-SiC(0001) surface as a function of annealing temperature hasbeen studied by ARPES, high resolution XPS, and LEED. For the initial stage of graphitization –the 6√3 reconstructed surface – we observe σ-bands characteristic of graphitic sp2-bonded carbon.The π-bands are modified by the interaction with the substrate. C1s core level spectra indicate thatthis layer consists of two inequivalent types of carbon atoms. The next layer of graphite (graphene)formed on top of the 6√3 surface at TA=1250°C-1300°C has an unperturbed electronic structure.Annealing at higher temperatures results in the formation of a multilayer graphite film. It is shownthat the atomic arrangement of the interface between graphite and the SiC(0001) surface ispractically identical to that of the 6√3 reconstructed layer
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.525.pdf
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