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  • 1
    Publication Date: 2006-10-26
    Description: Feasibility of fabricating thick film, insulated gate field effect transistor using integrated screened circuit technology
    Keywords: ELECTRONIC EQUIPMENT
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  • 2
    Publication Date: 2006-10-26
    Description: Pilot process for fabrication of screened resistors on ceramic substrates
    Keywords: ELECTRONIC EQUIPMENT
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  • 3
    Publication Date: 2011-08-17
    Description: Preliminary experimental results are reported on a self-structured, multilayer bubble memory with buried data layer. Stripe domains are used to move carrier bubbles by magnetostatic coupling. An expression is derived for that coupling as a function of thickness of the GGG separation layer. Experimental values of coupling are given as a function of bias field. An expression for stripe curvature as a function of bias field is derived. The performance of seven different current access stripe propagation circuits is reported.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
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  • 4
    Publication Date: 2011-08-10
    Description: Material formulation, processing and firing techniques for screened ceramic microcircuit capacitors and conductor crossovers
    Keywords: MATERIALS, METALLIC
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  • 5
    Publication Date: 2011-08-17
    Description: Research work on multilayer self-structured bubble memories is at an early stage. The coupling of bubbles to stripes is investigated theoretically and experimentally and shown to be adequate for propagation. Propagation of stripes is demonstrated both by current access and field access techniques. These propagation techniques are of prime interest because they can eliminate most photographic features from the storage area. Multilayer films offer great promise for higher-capacity higher-density memories in which most of the photolithography has been eliminated and the minimum feature size of much of the remaining has been increased. Furthermore, stripe propagation can be carried out with current access, providing a significant reduction in packaging cost and power consumption over field access devices.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
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  • 6
    Publication Date: 2019-06-28
    Description: New technique produces high-mobility multilayer films suitable for use on silicon process line. New material is multilayer film of alternate layers of silicon and alloy of silicon and germanium. Films grown thus far have electron mobilities 50 percent greater than epitaxial silicon films grown previously.
    Keywords: FABRICATION TECHNOLOGY
    Type: LAR-12846 , NASA Tech Briefs (ISSN 0145-319X); 8; 3; P. 409
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  • 7
    Publication Date: 2019-06-27
    Description: A modular concept with three separate modules roughly separating bubble domain technology, control logic technology, and power supply technology was employed. These modules were respectively the standard memory module (SMM), the data control unit (DCU), and power supply module (PSM). The storage medium was provided by bubble domain chips organized into memory cells. These cells and the circuitry for parallel data access to the cells make up the SMM. The DCU provides a flexible serial data interface to the SMM. The PSM provides adequate power to enable one DCU and one SMM to operate simultaneously at the maximum data rate. The SSM was designed to handle asynchronous data rates from dc to 1.024 Mbs with a bit error rate less than 1 error in 10 to the eight power bits. Two versions of the SSM, a serial data memory and a dual parallel data memory were specified using the standard modules. The SSM specification includes requirements for radiation hardness, temperature and mechanical environments, dc magnetic field emission and susceptibility, electromagnetic compatibility, and reliability.
    Keywords: SPACECRAFT INSTRUMENTATION
    Type: NASA-TM-78674
    Format: application/pdf
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  • 8
    Publication Date: 2019-07-13
    Description: Bubble device technologies for spacecraft onboard memory offer improved reliability and memory functional characteristics. Recent advances include Permalloy gap devices (commercially available) whose improved performance and higher density are attributable to an asymmetric chevron pattern. Secondly, an order of magnitude increase in density at less power than the Permalloy technology is possible with the ion implant technology. A third technology, the self-structured current access system, offers another order of magnitude improvement in density and data rate, and is being studied. Capacity estimates for Permalloy gap, ion implant, and self-structured current access systems are, respectively, 10 to the 8th, 10 to the 9th, and 10 to the 10th bits, and power per unit data rate efficiencies are 140, 60, and 2 W/Mbps. A flexible modular organization system, compatible with all of these device technologies, is analyzed, and, as the system is contained in a bubble, relatively simple retrofitting is foreseen.
    Keywords: COMPUTER OPERATIONS AND HARDWARE
    Type: nternational Technical Symposium; Aug 22, 1982 - Aug 27, 1982; San Diego, CA
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  • 9
    Publication Date: 2019-07-13
    Description: A solid state data recorder (SSDR) has been developed which offers a high-reliability alternative to tape recorders in many spacecraft telemetry applications. The storage medium used in this recorder was ferrimagnetic garnet films supporting nonvolatile magnetic bubble domains. The recorder was designed using modular construction consisting of a digital control unit, power supply, and two memory modules. A prototype SSDR has been fabricated which is designed for 100-million bits of storage but was populated with 128 chips for a 13-million bit capacity. Preliminary tests indicate satisfactory operation.
    Keywords: SPACECRAFT INSTRUMENTATION
    Type: ITC/USA/''78; Proceedings of the International Telemetering Conference; Nov 14, 1978 - Nov 16, 1978; Los Angeles, CA
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  • 10
    Publication Date: 2019-07-13
    Description: A bubble memory module design providing flexibility for many user applications in spacecraft data recording is described. The memory module can be used with user-designed controllers with the memory organization determined by the application. Asynchronous data rates from zero to 1.33 Mbits/sec at minimum power are accomplished by using 8-chip memory cells with 100 K bit serial chips. The memory module is expandable from a 4 x 2 cell matrix to a 4 x 16 cell matrix corresponding to an expandable capacity of 6.55 M to 52.4 M bits. The module's design, utility in various memory systems, and user clocking scheme are described.
    Keywords: COMPUTER OPERATIONS AND HARDWARE
    Type: International Magnetics Conference; Apr 21, 1980 - Apr 24, 1980; Boston, MA
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