Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
74 (1999), S. 1144-1146
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Transient capacitance methods were applied to the depletion region of an abrupt asymmetric n+−p junction of silicon and unintentionally doped poly[2-methoxy, 5 ethyl (2′ hexyloxy) paraphenylenevinylene] (MEH-PPV). Studies in the temperature range 100–300 K show the presence of a majority-carrier trap at 1.0 eV and two minority traps at 0.7 and 1.3 eV, respectively. There is an indication for more levels for which the activation energy could not be determined. Furthermore, admittance data reveal a bulk activation energy for conduction of 0.12 eV, suggesting the presence of an additional shallow acceptor state. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.123469
Permalink
|
Location |
Call Number |
Expected |
Availability |