Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
75 (1994), S. 3571-3578
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We investigated the low-temperature emission of Al0.48In0.52As under high pressures from 1 bar up to 92 kbar, paying special attention to the changes in luminescence mechanisms that occur concurrently with the crossover between the Γ- and the X-related states. By investigating the temperature and excitation power dependence of the photoluminescence together with the photoluminescence excitation, we demonstrate the low-temperature emission of Al0.48In0.52As is due to neutral donor-acceptor-pair (D0,A0) transitions with a relatively deep acceptor. This occurs in both the Γ- and the X-related states. We suggest the shallow donor ground states associated with the X and the Γ conduction bands seem to be tied quite rigidly to these conduction bands. Variations in the donor binding energies with the pressure and the Γ-X related state crossover seem to be minor. The linear pressure coefficients αΓ and αX of the (D0,A0) related to the Γ and the X levels in the conduction band are 7.9±0.1 and −2.9±0.1 meV/kbar, respectively. The Γ-X related state crossover occurs at ∼52.5±0.5 kbar at 2 K. The direct band gap EΓg and the indirect band gap Exg of Al0.48In0.52As are ∼1.61 and ∼2.17 eV at 1 bar and 2 K, respectively.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.356068
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