ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Photoluminescence, photoluminescence excitation, and resonant Raman spectroscopy of disordered and ordered Ga0.52In0.48P (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5163-5172 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ordering in the CuPt structure is known to significantly reduce the band gap of Ga0.52In0.48P as well as induce a number of unusual details in its optical properties, including long, excitation-intensity-dependent lifetimes and an excitation-intensity-dependent emission energy. We report photoluminescence (PL), photoluminescence excitation (PLE), and resonant Raman measurements performed on ordered and disordered Ga0.52In0.48P. The dominant high energy emission process at low temperature in disordered Ga0.52In0.48P is established to be excitonic, but the exciton trapping energy is not unique. PLE from ordered Ga0.52In0.48P shows significant tailing of electronic states into the band gap and a "band edge'' which depends on detection energy. The dominant radiative process in ordered Ga0.52In0.48P is not excitonic. A large increase in the Stokes shift between the absorption edge (band gap) and PL emission peak occurs when the material orders. Hence, low temperature PL is determined to be a particularly poor measure of band gap. Resonant Raman scattering is used to study optical phonons and their coupling to electronic states. We find that the resonance enhancement at the band edge occurs via localized excitons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353792
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Modal gain and lasing states in InAs/GaAs self-organized quantum dot lasers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 615-617 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The modal gain of an InAs/GaAs self-organized quantum dot laser is determined from a measurement of the normal incidence, interband photocurrent. The maximum modal gain of the ground state transition is shown to have a value of (7±3) cm−1, considerably smaller than typical values for comparable quantum well lasers. The photocurrent technique is demonstrated to be a convenient and simple method for determining the spectral form of the gain and for comparing the modal gain of different devices. The consequences of the small modal gain for the laser characteristics are discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371908
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Structural and optical studies of vertically aligned InAs/GaAs self-assembled quantum dots (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6374-6378 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a structural and optical spectroscopic investigation of multiple layer InAs/GaAs self-assembled quantum dots, studied as a function of the GaAs thickness between the quantum dot layers. With decreasing GaAs thickness the positions of dots in different layers exhibit a transition from no correlation to full correlation. Optically the dots in uncorrelated and fully correlated structures are found to exhibit very distinct and different properties. With increasing laser power the photoluminescence of the correlated structure exhibits a high energy, asymmetrical broadening, an effect absent in the uncorrelated structure. In photoluminescence excitation multiple-LO-phonon carrier relaxation features are observed in the spectra of the uncorrelated structure but not in the spectra of the correlated structure. These differences are explained in terms of nonresonant carrier tunneling between the dots in the correlated dot structures. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1418003
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Cross-barrier recombination in a GaAs/AlGaAs double-barrier resonant tunneling structure (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8844-8846 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation by photoluminescence (PL) spectroscopy of cross-barrier recombination between spatially separated two-dimensional electron and hole gases confined respectively in the quantum well (QW) and collector accumulation layer of a GaAs/AlGaAs double-barrier resonant tunneling structure. At the onset of the n=3(E3) resonance in the current–voltage characteristic, the energy of the cross-barrier transition Ecr is found to coincide with that of the PL peak arising from recombination of electrons from the E3 confined level in the QW with n=1 confined hole states (E3lh recombination). Similarly, at the onset of the E4 resonance, Ecr≈E4lh. We show that this behavior arises as a consequence of the symmetrical potential distribution within the structure at the onsets of the resonances. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362511
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Carrier screening effects in piezoelectric strained InGaAs/GaAs quantum wells grown on the [111]B axis (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5447-5452 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Excitation-power-dependent blue shifts in photoluminescence and electroluminescence are studied in piezoelectric strained layer multiple quantum wells (MQWs) incorporated in p-i-n diodes. By investigating MQWs with different geometric structures and controlling external bias it is demonstrated that, in contrast to previous studies, these blue shifts cannot always be attributed to long-range screening across a MQW and that screening must take place due to charge redistribution within individual wells. The results provide design rules to ensure this latter screening mechanism, which is subject to fast recovery.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357202
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Solid-source molecular beam epitaxy growth of GaInP and GaInP-containing quantum wells (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2029-2034 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth and characterization of high quality epitaxial layers of GaInP and GaInP-containing quantum wells grown by solid-source molecular beam epitaxy (MBE) is reported. Bulk GaInP shows photoluminescence linewidths as small as 6.7 meV and double-crystal x-ray diffraction linewidths as narrow as 12.5 arcsec. Evidence for the presence of long-range ordering in MBE-grown GaInP is discussed. GaAs-GaInP quantum wells show good structural and optical quality. A comparison of the measured transition energies with the predictions of a simple, finite depth square well model suggests a very small value for the conduction band offset in this system. GaInP-(Al0.37Ga0.64)0.51In0.49P quantum wells show good optical properties with emission at energies as high as 2.15 eV (≡6000 A(ring) at 300 K) at 4.2 K for a 12 A(ring) well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356304
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Electroluminescence and impact ionization phenomena in a double-barrier resonant tunneling structure (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1164-1166 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electroluminescence (EL) due to impact ionization in the high field region of a double-barrier resonant tunneling structure is reported. Knowledge of the charge distribution in the structure enables a detailed analysis to be made of the impact ionization rate as a function of electric field. Large peak-to-valley ratios of 15:1 in the EL emission intensity from the quantum well active region are observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104352
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Mid-infrared intersubband electroluminescence from a single-period GaAs/AlGaAs triple barrier structure (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2141-2143 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter reports the observation of intersubband electroluminescence from a single-period resonant tunneling structure. Intersubband emission (λ(approximate)8.4 μm), with a full width at half maximum of 7 meV, was observed from a GaAs/AlGaAs triple barrier structure with quantum well widths of 66 and 33 Å. The emission was coupled out of the sample by a metallic grating with a period of 5 μm deposited on the surface. The intensity of emission follows the resonance behavior in the I–V characteristics. As the temperature increases from 10 to 200 K, the emission intensity decreases monotonically by a factor of ∼2 and the emission energy shifts down slightly (ΔE(approximate)2.7 meV). The temperature dependence of the emission energy is explained by a combination of thermal broadening of the electron distribution and the nonparabolicity of the conduction bands. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121302
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Donor identification in bulk gallium arsenide (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 389-391 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report identification, by a spectroscopic method, of shallow donors in both epitaxial and bulk gallium arsenide. Identification is achieved using photoluminescence from resonantly excited two-electron satellites of donor bound exciton lines at 4.2 K in a magnetic field of 9.5 T. Sulfur and a previously unreported lower binding energy donor dominate in liquid-encapsulated Czochralski-grown crystals, while S and Si are dominant in the Bridgman-grown material. Central cell structure is resolved in the (D0,X) lines in a high magnetic field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99475
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Electric-field-dependent photoconductivity in GaInAs-InP quantum wells (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 752-754 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a study of the effects of an electric field on the excitonic, band-to-band photoconductivity spectra of a Ga0.47In0.53As-InP quantum well structure. In a sample with five wells of widths 10–110 A(ring) we show that for carrier motion normal to the quantum well layers a photoconductivity signal is only observed from those wells which are in a region of nonzero electric field. The spectral line shapes of the transitions in the narrowest two wells show strong variations with field, which we attribute to exciton dissociation at high field, and possibly exciton screening by free carriers trapped in the wells at low fields. The results are compared with photoconductivity spectra of the same structure, but for carrier motion in the plane of the layers. The latter geometry is found to reflect more accurately the sample absorption.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99822
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...