ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We fabricated 4H-SiC lateral JFETs with a reduced surface field (RESURF) structure,which can prevent the concentration of electric field at the edge of the gate metal [1]. Previously, wereported on the 4H-SiC RESURF JFET with a gate length (LG) of 10 μm [2]. Its specific on-resistancewas 50 mΩcm2, which was still high. Therefore, a Ti/W layer was used as an ion implantation maskso as to decrease the thickness of the mask and to improve an accuracy of the device process. ARESURF JFET with the gate length (LG) of 3.0 μm was fabricated, and the specific on-resistance of6.3 mΩcm2 was obtained. In this paper, the fabrication process and the electrical characteristics of thedevice are described
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1203.pdf
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