ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
From the studies of the initial growth mechanisms of ternary InGaAs and binary InAs epilayers on GaAs, a novel binary buffer layer concept is proposed for application in the large lattice-mismatched heteroepitaxy. Although the growth of this binary buffer layer results in three-dimensional island growth at the initial stage, no vertical-type dislocations are generated and most dislocations are annihilated during the island coalescence stage. Using this new concept and selecting InP as the binary buffer, device-quality In0.53Ga0.47As grown on InP-coated GaAs substrates can be achieved. This technique has the potential to be further applied to other heteroepitaxial systems.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.110493
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