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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4432-4433 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the gettering effect of an evaporated aluminum layer on single crystalline and cast multicrystalline silicon doped with radioactive cobalt-57 by means of radiotracer methods and Mössbauer spectroscopy. We present evidence that aluminum gettering works at high temperatures and transfers the cobalt atoms from the Si bulk to the liquid Al-Si phase. Presumably Al gettering can be explained as a segregation induced process caused by a higher solubility of the metallic impurity in the liquid Al-Si phase compared with that in solid silicon.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 911-913 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report first results on the recombination properties of structurally well defined NiSi2 precipitates in n-type silicon. Under the conditions applied, precipitates form without the occurrence of punched out dislocations or any other secondary defects. We find that the minority-carrier diffusion length (LD) measured by electron beam induced current (EBIC) is related to the precipitate density NV and LD (approximately-equal-to) 0.7 × NV−1/3. EBIC investigations of individual precipitates reveal contrasts up to 40% demonstrating NiSi2 particles to be efficient recombination centers.
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2689-2691 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used local plastic deformation and electron irradiation to create p-n junctions in Hg0.3Cd0.7Te. The electron induced current mode of scanning electron microscopy was used to detect the local conversion from p type to n type. Control experiments with CdTe and independent results show that the migration of interstitial mercury and its reaction with an acceptor must be responsible for the observed conversion.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2207-2209 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We give experimental evidence for cobalt in silicon that each of the processes defining phosphorus diffusion gettering (PDG), i.e., (1) P doping by in-diffusion and (2) SiO2 growth, achieves moderate gettering, while the cooperation of the two processes leads to strong gettering of cobalt. In a tentative model, gettering is attributed to the coupling between local currents of silicon self-interstitials, which are generated during PDG, and 3d impurities on substitutional sites.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 854-856 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the direct imaging of Be δ-doped layers in GaAs, in the concentration range (0.5–2)×1014/cm2, comparing samples grown by gas source molecular beam epitaxy (MBE) and conventional MBE. The gas source MBE δ layers are ∼15 A(ring) wide, and at least at high concentrations, consist of clusters ∼12 A(ring) in diameter. At 2×1014 Be atoms/cm2, the MBE δ layer is an order of magnitude wider than that grown at the same temperature by gas source MBE. Our results imply that layers with Be concentrations in excess of 1021/cm3 can be fabricated by gas source MBE.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3590-3593 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion of manganese in silicon was studied in the temperature range 900–1200 °C by deep-level transient spectroscopy and the tracer method, with particular emphasis on well-defined boundary conditions. The surface concentrations from the tracer method agree with solubility data and the concentration of electrically active interstitial manganese is found to be 60–70% of the total manganese concentration. Both methods yield identical diffusion coefficients which are described by an Arrhenius law, D(T)=(6.9±2.2)×10−4 cm2 s−1 exp [(−0.63±0.03)eV/kT].
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2519-2523 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The gettering of cobalt in silicon during phosphorus diffusion under high surface concentrations (PDG) has been investigated by Mössbauer spectroscopy between 825 and 1000 °C. It has been found that cobalt, distributed uniformly in the specimen before PDG, is concentrated within a highly phosphorus doped Si-surface layer thinner than 0.5 μm after PDG. It is also shown that PDG suppresses surface gettering and that the residual cobalt concentration in the bulk can be lower than the cobalt solubility. Mössbauer spectra of this layer show that cobalt occurs as two species there. The first of these has nearly cubic symmetry and is transformed into the second species upon annealing at 600 °C. This species is stable under the conditions of PDG. Neither the formation of phosphorus-cobalt pairs nor the presence of CoSi2 can provide a comprehensive explanation of all experimental facts.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2703-2704 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: α and β dislocations are separately investigated in p-CdTe by deep level transient spectroscopy. Two lines, whose amplitudes increase with increasing dislocation density are found. The defect concentration is found to be higher in case of β dislocations. One line, at Ev+0.44 eV, is Gaussian broadened, while the second, at Ev+0.35 eV, shows unusual capture characteristics.
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Czechoslovak journal of physics 35 (1985), S. 307-317 
    ISSN: 1572-9486
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A thorough understanding of recovery phenomena in high-temperature plasticity requires information on both creep (constant stress) and constant strain-rate deformation in the corresponding steady-state regimes. This is demonstrated for the diamond cubic structure elements Si and Ge, where dynamical recovery is characterized by two independent mechanisms, crossing in the range accessible to measurements, which have been identified to obey self-diffusion or cross-slip. In consequence, the stress-strain curves of single crystals show two recovery stages, while in steady-state creep only one (the second) recovery stage can be observed. From deformation experiments on fcc metals published in the literature it is concluded, that the stress-strain curves of at least Au and Al single crystals are also characterized by two recovery stages at high temperatures; it will be shown, however, that the situation is different from that of the semiconductors to some extent. Finally, some preliminary comments concerning dynamical recovery of hexagonal metals are given.
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  • 10
    ISSN: 1432-1203
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary Double heterozygosity of pyruvate kinase (PK) deficiency associated with hereditary hemolytic anemia is emphasized by studies of a kindred harboring two distinct mutant forms of this enzyme. The hematologically unaffected parents exhibit slightly reduced PK activity, a normal Hill coefficient, and a normal thermodynamic dissociation constant for the overall reaction. The paternal enzyme is characterized by normal substrate affinities and decreased activities with the substrate analogues CDP and GDP, whereas the maternal enzyme shows normal affinity for PEP, but an increased affinity for ADP and low thermostability. It is assumed that the erythrocytes of the parents contain a mixture of normal PK and a functionally abnormal isoenzyme, the latter differing between the parents. The two children suffer from hereditary hemolytic anemia. Their PK must be a combination of the mutant paternal and maternal isoenzymes, and their activities are reduced to about 30%. These enzymes are characterized by an increased affinity for PEP and a decreased affinity for ADP, a Hill coefficient of about 1 (indicating lack of cooperativity due to a loss of its allosteric properties), a decreased overall catalytic activity, and a higher resistance to heat denaturation. Further differences are observed in the SDS-gel electrophoresis between the two patients' enzymes. From the enzymological point of view it is impossible to characterize true PK variants in such double heterozygous cases which contain a combination of two different isoenzymes. The cause of chronic hemolysis appears to depend mainly on the loss of the allosteric properties, i.e., the lack of enzyme cooperativity.
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