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  • 1
    Electronic Resource
    Electronic Resource
    Structural, electrical, and optical properties of CuGaSe2 rf sputtered thin films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 189-194 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of CuGaSe2 have been produced by rf sputtering. Compositional, structural, electrical, and optical properties are strongly influenced by growth temperature. At substrate temperatures lower than 300 °C amorphous or poorly crystalline Se-excess films are obtained, showing high resistivity (≈103 Ω cm) and optical transitions at 1.62, 1.80, and 2.4 eV (values lower than the single-crystal counterparts). At the higher growth temperatures, polycrystalline films are obtained (average grain size 0.7 μm) with lower values of resistivity (1 Ω cm), and optical transitions at 1.68, 1.90, and 2.55 eV (very close to the single-crystal values). A hopping conduction mechanism has been detected at the lower measuring temperature (T〈150 K), and a grain boundary limited conduction process at the higher measurements temperature (T〉150 K). Structural and compositional characteristics are used to explain the behavior observed in the electrical and optical properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347113
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  • 2
    Electronic Resource
    Electronic Resource
    Sensitivity of intramolecular vibrational energy relaxation to stretch–bend potential energy coupling and stability of periodic orbits (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 801-811 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Stretch–bend coupling via 2:1 Fermi resonance is an important mechanism for rapid energy flow from overtone excited CH local mode states. To elucidate the role of potential energy coupling, we have studied the classical dynamics of a two-mode stretch–bend Hamiltonian for the benzene fragment C3 H. The effects of attenuation of the CCH bend force constant by stretching of the CH bond on the short time (up to 0.12 ps) probability decay dynamics of the model system are in good qualitative accord with trends found previously in full scale classical trajectory simulations on planar benzene by Lu, Hase, and Wolf. Surfaces of section are used to study the classical phase space structure of the stretch–bend Hamiltonian. A close correlation between instability of the CH periodic orbit and exponential decay of probability is found, and relaxation rates can be estimated to good accuracy by linear stability analysis of the periodic orbit. Increasing the strength of the potential coupling stabilizes the CH periodic orbit, thereby suppressing overtone relaxation. There is therefore an effective cancellation of kinetic and potential stretch–bend coupling terms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.455203
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  • 3
    Electronic Resource
    Electronic Resource
    Use of Kramers–Kronig transforms for the treatment of admittance spectroscopy data of p-n junctions containing traps (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7830-7836 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of Kramers–Kronig transforms is proposed for the treatment of admittance spectroscopy data of junctions when significant shunt conductance or series resistance is present. An algorithm has been implemented to calculate the transformations numerically and the validity of the method developed has been tested using simulated data. Two experimental systems, p-n junctions into InP made by ion implantation, and atomic-layer-epitaxy-grown CdS/CdTe heterojunctions, have been characterized using this procedure. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362391
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  • 4
    Electronic Resource
    Electronic Resource
    Metal–insulator transition in SrRuO3 induced by ion irradiation (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3375-3377 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effect of He+ irradiation on the electrical resistivity and Curie temperature of ferromagnetic SrRuO3 thin films. An evolution from metallic to insulating behavior is observed when He+ ion fluence is increased, suggesting a metal–insulator transition. Damage by ion irradiation produces a strong decrease of the Curie temperature. On the other hand, no significant change in Tc (∼160 K) takes place in fresh samples grown at different substrate temperatures. We discuss the possible correlation between structural changes induced by irradiation, which reflect in an increase of the pseudocubic lattice parameter, and the observed depression of Tc.© 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122772
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  • 5
    Electronic Resource
    Electronic Resource
    CuInSe2 thin films produced by rf sputtering in Ar/H2 atmospheres (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4163-4169 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural, compositional, optical, and electrical properties of CuInSe2 thin films grown by rf reactive sputtering from a Se excess target in Ar/H2 atmospheres are presented. The addition of H2 to the sputtering atmospheres allows the control of stoichiometry of films giving rise to remarkable changes in the film properties. Variation of substrate temperature causes changes in film composition because of the variation of hydrogen reactivity at the substrate. Measurements of resistivity at variable temperatures indicate a hopping conduction mechanism through gap states for films grown at low temperature (100–250 °C), the existence of three acceptor levels at about 0.046, 0.098, and 0.144 eV above valence band for films grown at intermediate temperature (250–350 °C), and a pseudometallic behavior for film grown at high temperatures (350–450 °C). Chalcopyrite polycrystalline thin films of CuInSe2 with an average grain size of 1 μm, an optical gap of 1.01 eV, and resistivities from 10−1 to 103 Ω cm can be obtained by adding 1.5% of H2 to the sputtering atmosphere and by varying the substrate temperature from 300 to 400 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339135
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  • 6
    Electronic Resource
    Electronic Resource
    Role of deep levels and interface states in the capacitance characteristics of all-sputtered CuInSe2/CdS solar cell heterojunctions (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3236-3241 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: All-sputtered CuInSe2/CdS solar cell heterojunctions have been analyzed by means of capacitance-frequency (C-F) and capacitance-bias voltage (C-V) measurements. Depending on the CuInSe2 layer composition, two kinds of heterojunctions were analyzed: type 1 heterojunctions (based on stoichiometric or slightly In-rich CuInSe2 layers) and type 2 heterojunctions (based on Cu-rich CuInSe2 layers). In type 1 heterojunctions, a 80-meV donor level has been found. Densities of interface states in the range 1010–1011 cm2 eV−1 (type 1) and in the range 1012–1013 cm−2 eV−1 (type 2) have been deduced. On the other hand, doping concentrations of 1.6×1016 cm−3 for stoichiometric CuInSe2 (type 1 heterojunction) and 8×1017 cm−3 for the CdS (type 2 heterojunction) have been deduced from C-V measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342676
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  • 7
    Electronic Resource
    Electronic Resource
    Stoichiometry control over a wide composition range of sputtered CuGaxIn(1−x)Se2 (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1239-1241 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Films of CuGaxIn(1−x)Se2 (CGIS) have been grown by rf sputtering from stoichiometric single targets with different Ga/In ratios. Adjusting growth temperature and argon pressure we are able to deposit films with a wide range of Cu contents: From CGIS Cu-poor (16 at. %) to Cu2Se. Reevaporation of (Ga,In)2Se3 binaries is observed when substrate temperature is increased at a constant argon pressure (20 mTorr). An increase in Ar pressure from 5 to 150 mTorr at a growth temperature of 450 °C, produces a decrease in Cu atomic percentage from 24% to 16% due to a preferential diffusion of Cu sputtered atoms in the plasma. The relevant film properties of the analyzed films are found to be ruled by the Cu content. Graded composition absorbers with adequate physical properties for the fabrication of photovoltaic devices are grown with a proper choice of growth parameters.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110851
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  • 8
    Electronic Resource
    Electronic Resource
    Optical spectroscopic study of the growth dynamics of radio-frequency-sputtered YBa2Cu3O7−x thin films (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 231-233 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An optical spectroscopic study of the plasma produced during rf sputtering of an YBa2Cu3O7−x target was performed to analyze two basic properties of the deposition process: resputtering effects and oxidation mechanisms. Strong emissions of all the species above a value of the target voltage were found. These observations are associated to a strong secondary electron emission of the target which originates a negative self-bias of the substrate and a subsequent resputtering by argon cations. The addition of different amounts of oxygen to the discharge reveals that preoxidation in the gas phase may decrease the oxygen content in the films: the oxidation of the films is dominated by atomic oxygen.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108193
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  • 9
    Electronic Resource
    Electronic Resource
    Chalcopyrite CuGaxIn1−xSe2 semiconducting thin films produced by radio frequency sputtering (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1875-1877 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CuGaxIn1−xSe2 thin films have been deposited by rf sputtering from three targets with different (Ga,In) content (x=0.25, x=0.5, and x=0.75). A structural, compositional, optical, and electrical study has been carried out for films grown at substrates temperatures higher than 350 °C. We have successfully obtained chalcopyrite single phase stoichiometric films. Very sharp absorption edges are obtained, with band gaps of 1.12, 1.35, and 1.51 eV for x=0, x=0.5, and x=0.75, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107140
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  • 10
    Electronic Resource
    Electronic Resource
    Detection of new superconductors using phase-spread alloy films (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3677-3679 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe an effective method for discovery of new superconductors, which combines phase-spread alloy thin film preparation with a magnetic field modulated (MFM) microwave absorption technique. The MFM technique can detect superconductivity in YBa2Cu3O7−δ volumes as small as 5×10−11 cm3. As an illustration, PrxGd1−xBa2Cu3O7−δ thin films with varying x were simultaneously grown on the same substrate using a phase-spread alloy technique. The onset temperature determined from the microwave absorption agrees with resistivity, Auger spectroscopy, and energy-dispersive x-ray microanalysis data. When phase-spread Lax(NiB)1−xNy films (0〈x〈1) were grown at several different N partial pressures and temperatures, no superconductivity was detected except that of pure La. In contrast, superconductivity was detected in Yx(NiB)1−xCy films grown on MgO. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114138
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