ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Unintentionally doped ZnO layers grown epitaxially on a sapphire substrate have been exposed either to a hydrogen or deuterium plasma. Secondary ion mass spectroscopy measurements performed subsequently showed a rapid diffusion of hydrogen in these layers. Furthermore, the presence of hydrogen in the ZnO samples is found to be responsible for nearly a factor of 3 increase in the free electron concentration. This effect is attributed to the hydrogen passivation of compensating acceptor impurities present in the as-grown ZnO layers. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1452778
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