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  • 1
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    Pressure-Induced Metallization of Molybdenum Disulfide (2014)
    In:  Physical Review Letters
    Details
    Publication Date: 2020-02-12
    Type: info:eu-repo/semantics/article
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  • 2
    Electronic Resource
    Electronic Resource
    Structural change of polycrystalline silicon films with different deposition temperature (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3844-3849 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline Si films were deposited by changing the deposition temperature (Td=150–750 °C) and film thickness (d=0.05–0.8 μm) using plasma-enhanced chemical vapor deposition. For both the films with Td below 150–250 °C and the films thinner than 0.2 μm with Td=600–650 °C, no crystallization was found. However, the crystallinity for the films with Td=650 °C increased with an increase in d thicker than 0.2 μm. Furthermore, the dominant orientations in thicker films changed in the order of a 〈111〉, 〈110〉, and 〈100〉 texture with increasing Td. It was suggested that less Si dangling bonds in grain boundary regions are formed in strongly uniaxially oriented poly-Si films. Crystallization at a lower Td was strongly influenced by the surface morphology of the substrates, but no crystallization at Td=600–650 °C for films thinner than 0.2 μm may be due to interference among growing grains with different textures, and the crystallization for films thicker than 0.2 μm was suggested to occur as a result of solid-phase crystallization of the underlying 0.2-μm-thick noncrystallized Si layer during film deposition. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369755
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  • 3
    Electronic Resource
    Electronic Resource
    Evaluation of anisotropic thermoelectricity of sintered Bi2Te3 on the basis of the orientation distribution of crystallites (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2235-2239 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Anisotropic thermoelectric characteristics of a sintered Bi2Te3 system have been evaluated on the basis of the orientation distribution of crystallites. Uniaxially anisotropic resistivities, Hall coefficients, and thermal conductivities of sintered Bi2Te3 were expressed by linear combinations of those of single crystal. The combination coefficients are specified by an anisotropy parameter that may be estimated by the anisotropy in the observed resistivities. Two types of x-ray diffraction experiments were performed to confirm the validity of the estimate. The observed diffraction intensities were reasonably consistent with the orientation distribution predicted by the anisotropy parameter. Theoretical curves of resistivities, Hall coefficients, and thermal conductivities of the sintered material were calculated by using the orientation distribution which was specified by a parameter estimated by the observed resistivities. The theoretical curves were in reasonable agreement with the observed data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357641
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  • 4
    Electronic Resource
    Electronic Resource
    Interaction between radiation-induced defects and the Pt-related center in silicon (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2206-2207 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interaction of Pt with electron irradiation induced defects has been observed. Platinum in silicon increases irradiation-induced defects remarkably, especially of the A center, and lowers the annealing temperature to 220–140 °C for the A and E centers, respectively. The level Ea (0.23) in the Pt-doped silicon is the Pt(−/0) level, an acceptor like the A center.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98941
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of deposition temperature on polycrystalline silicon films using plasma-enhanced chemical vapor deposition (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 584-588 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The 200-nm-thick polycrystalline Si films were deposited by changing the deposition temperature (Td=150–750 °C) using plasma-enhanced chemical vapor deposition of monosilane–hydrogen mixtures. The structural and bonding properties were examined using techniques of Raman scattering, x-ray diffraction, infrared (IR) absorption, and electron spin resonance. Except for Td at 150 and 650 °C, crystallization of the films was observed, and the occurrence of two IR absorption bands around 850 and 1000 cm−1 and an increase in the density of Si dangling bonds were observed in the range of Td higher than 500 °C. These origins were discussed in connection with the mechanisms of disappearance of crystalline phases from the film at Td=650 °C. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368085
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  • 6
    Electronic Resource
    Electronic Resource
    Iron-related deep levels in n-type silicon (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3923-3927 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels in iron-doped n-type silicon have been investigated by deep-level transient spectroscopy (DLTS). Three deep levels of Ec−0.29 eV (E1), Ec−0.36 eV (E2), and Ec−0.48 eV (E3) were observed. The concentration of E1 and E2 levels increased during the storage at room temperature. The depth profile of the E3 level concentration indicates the out-diffusion and precipitation of the defects related to the E3 level. In addition, after annealing at 80 °C for 30 min, the E2 and E3 concentrations decreased and then recovered at room temperature. These results suggest that the defects related to these levels are mobile during quenching and storage at room temperature. The temperature dependence of the E3 level concentration shows a formation energy of about 2 eV, which is smaller than that of interstitial iron, and the E3 level concentration is two orders of magnitude lower than the concentration of interstitial iron. The origins of these levels are probably loosely associated iron-related complexes such as iron-acceptor pairs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343433
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  • 7
    Electronic Resource
    Electronic Resource
    Introduction of defect levels in resistive-evaporated n-Si Schottky barrier diodes (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3928-3932 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defect levels in n-type Si Schottky barrier diodes made by resistive evaporation have been investigated by deep level transient spectroscopy. Three defect levels are observed at 0.16, 0.14, and 0.12 eV below the conduction band. The concentrations of the defect levels exponentially decrease into the substrate. The defects are introduced during etching process rather than evaporation process. The concentration of the defects increase with the thickness of the layer removed by etching before Schottky metal deposition, and decrease with the etching rate. This suggests that the defect levels are produced near the surface and are driven into the substrate during etching processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343357
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  • 8
    Electronic Resource
    Electronic Resource
    Observation of the mechanochemically polished surface of Si wafer by electron microscopy and diffuse x-ray scattering (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4159-4162 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: From the analysis of rod-shaped diffuse x-ray scattering from a Si wafer it has been suggested that platelike defects are induced by the wafer making process. It was found, however, from the cross-sectional observation of a mechanochemically polished Si wafer surface by a high-resolution transmission electron microscopy that such defects do not exist under the surface. On the basis of this fact and an additional x-ray measurement from the (001) surface of Si wafer the rod-shaped diffuse x-ray scattering is reinterpreted as scattering due to the truncation of the charge density at the crystal surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339134
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  • 9
    Electronic Resource
    Electronic Resource
    On the behavior of interaction of a Pt-related center with radiation-induced defects and the trace platinum detection (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 515-518 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interaction of platinum (Pt) with electron irradiation-induced defects has been observed. Platinum in silicon increases irradiation-induced defects remarkably, especially the A center, and lowers the annealing temperature to 220 °C for the A center and to 140 °C for the divacancy and E center. The level Ea (0.23) in the Pt-doped silicon is the Pt(−/0) level, an acceptor like the A center. A method is suggested for activating the platinum in silicon with low-energy electron irradiation and subsequent thermal annealing and detecting it by deep level transient spectroscopy (DLTS).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343133
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  • 10
    Electronic Resource
    Electronic Resource
    Photon counting in x-ray diffraction : INTERNATIONAL CONFERENCE ON SYNCHROTRON RADIATION INSTRUMENTATION (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 2324-2327 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The photon counting method is proposed for the field of A(ring) x-ray diffraction. For this purpose, a new memory device was developed. The photon distribution and the photon autocorrelation were measured, and high-intensity sources such as the rotating anode generator and the Photon Factory were characterized. It has been shown that the method is useful to investigate time-dependent phenomena on the time scale down to 10 μs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140753
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