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  • 1
    Call number: SR 90.0002(521-C)
    In: Professional paper
    Type of Medium: Series available for loan
    Pages: III, C-32 S. + 2 pl.
    Series Statement: U.S. Geological Survey professional paper 521-C
    Language: English
    Location: Lower compact magazine
    Branch Library: GFZ Library
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  • 2
    Call number: SR 90.0002(521-D)
    In: Professional paper
    Type of Medium: Series available for loan
    Pages: V, D-18 S. + 2 pl.
    Series Statement: U.S. Geological Survey professional paper 521-D
    Language: English
    Location: Lower compact magazine
    Branch Library: GFZ Library
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 4338-4345 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Carbon K edge near edge x-ray absorption fine structure (NEXAFS) spectra of adsorbed acetonitrile and reactive intermediates derived therefrom on Ag(110) were studied in order to determine their orientation and bonding to the surface. For both the multilayer and the adsorbed monolayer there is excellent agreement between the spectra of the adsorbed acetonitrile and the gas phase species. For the multilayer coverage the orientation of the acetonitrile molecules is not completely random; the molecules prefer an orientation with their bond axes closer to parallel than perpendicular to the surface. At monolayer coverage acetonitrile bound to the surface is unrehybridized. It is bound with its linear molecular skeleton parallel to the surface and randomly oriented azimuthally. Annealing molecular CH3 CN to 325 K in the presence of coadsorbed atomic oxygen produces a linear CH2 CN surface intermediate, the molecular axis of which is parallel to the surface and perpendicular to the close-packed direction. The C–C and C–N bond lengths are essentially unperturbed from their values in gas phase CH3 CN. Bonding appears to occur between the methylene carbon and the metal, as expected. A broadening of the π* resonance for transition into the π* orbital perpendicular to the surface is interpreted in terms of π-donor bonding.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Boston, MA, USA : Blackwell Science Inc
    Restoration ecology 7 (1999), S. 0 
    ISSN: 1526-100X
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Reinstatement of vegetation to a similar condition to that prior to disturbance is often required in industrial restoration schemes. Seeding with specially prepared seed mixes containing species suited to local soils is often the preferred option on grounds of practicality and cost. Turf translocation is more difficult and costly but, if successful, meets the reinstatement requirement more precisely. In a pilot study at a proposed opencast coal site in Wales, we compared the effectiveness of whole-turf translocation of herb-rich mesic grassland communities, with a less technically demanding and more cost-effective technique involving spreading turf over twice the area at the receiver site and rotovating it into the underlying soil. The translocated whole turf and rotovated turf plots were cut annually and the vegetation removed to simulate grazing that had occurred prior to translocation. Both the whole-turf and rotovated turf transplant techniques gave successful re-establishment of 50% or more of the species originally present. After three years, the cover and species composition were similar in “whole-turf” and “spread and rotovated” plots. This suggests that the “spread and rotovate” technique provides a satisfactory ecological alternative to whole-turf translocation. However, plant communities changed, in some cases substantially, after translocation using either technique. Altered soil hydrology and nutrition combined with the substitution of cutting for grazing are probably the main causes of these changes.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1475-2743
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences , Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract. The characteristics and variability of soils within a 30 ha experimental site in N. E. Nigeria are analysed in relation to tree establishment. Profile description and analyses for some 480 surface samples of the sandy to clayey surface soils from Lake Chad lacustrine sediments provide baseline properties against which any subsequent modifications resulting from agroforestry practices can be assessed and to which initial tree performance can be related. This has been undertaken using principal component and spatial analyses. Inherited soil properties show spatial variations across the site which can be related to the soil textural parameters. The initial survival of trees planted for agroforestry experimentation shows strong correlations with the inherited characteristics of the soil rather than with acquired soil properties.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7483-7486 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface defect structures on diamond (100) surfaces induced by 500 eV neon ion bombardment and by subsequent annealing were studied in situ with x-ray absorption near-edge structure (XANES) spectroscopy using 250–800 eV synchrotron radiation and with low energy electron diffraction. Ex situ x-ray photoemission spectroscopy (XPS) was also used to characterize the defective layer. Significant changes in the XANES spectra were identified for the defects induced by ion bombardment and subsequent annealing. The diamond discrete exciton absorption at 289.0 eV was clearly suppressed even at the lowest ion fluence used in this study, i.e., 3×1014/cm2, and no such exciton could be observed at 7×1014/cm2. However, the changes in the multi-maxima shape-resonance absorption structure in the range of 290–310 eV indicated that a loss of the diamond long range order required a fluence of 1×1015/cm2. The structural changes were also manifested by the transformation of gap state absorption typical of clean 2×1 surfaces to the π* absorption typical of amorphous carbon. XPS showed that the defective layer was about 2 nm thick. For all samples prepared with the bombardment conditions in the study, both the XANES and XPS data also indicated no phase transformation from defective layers to graphite even after annealing to a temperature of 1100 °C. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 956-958 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We compare the characteristics of three electroabsorption modulators fabricated using GaAs/AlGaAs multiple quantum well structures with well widths 47, 87, and 145 A(ring). We find that the narrow well structure provides the largest change in transmission. The 87 A(ring) well structure provides the largest contrast ratio, while the wide well sample offers the lowest operating voltage.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1927-1929 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We identify the four allowable phonon modes in InxGa1−xAs on InP:InAs-like transverse optical (TO) (225±2 cm−1), InAs-like longitudinal optical (LO) (233±1 cm−1), GaAs-like TO (255±2 cm−1), and GaAs-like LO (269±1 cm−1), using the selectivity of first-order Raman scattering off the (100) normal surface and the (011) cleaved plane and detailed line-shape analysis employing a sequential simplex optimization procedure. Raman scattering off the (011) cleaved plane was achieved for the first time in thin-film InGaAs using microprobing capabilities (∼1 μm). We also identify another phonon mode R* at 244 cm−1 which is attributed to an alloy disorder mode in these films. For the five identified phonon modes, a linear relationship between the Raman frequencies and composition determined from x-ray diffraction was determined for near-lattice-matched conditions (0.42〈1−x〈0.52).
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 803-805 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the photoluminescence (PL) behavior of porous Si and have found that the PL intensity rises with time under exposure to continuous laser light at high power densities ((approximately-greater-than)50 W/cm2). Samples exposed to lower power density laser light exhibit the well-known degradation of its PL intensity. As the power density is raised, the PL intensity increases with time and shows a "window'' effect in which the PL intensities will again degrade at higher power density. Micro-Raman studies were performed on the sample and no apparent change in crystalline structure could be found for differing power densities. We correlate this anomalous PL effect with porous Si samples etched with different HF acid concentrations and show that this effect occurs only for porous Si samples etched with a relatively high acid concentration ((approximately-greater-than)30%).
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 563-565 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on micro-Raman spectroscopy studies of porous silicon which show an amorphous silicon Raman line at 480 R cm−1 from regions that emit visible photoluminescence. A Raman line corresponding to microcrystalline silicon at 510 R cm−1 is also observed. X-ray photoelectron spectroscopy data is presented which shows a high silicon-dioxide content in porous silicon consistent with an amorphous silicon phase.
    Type of Medium: Electronic Resource
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