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  • 1
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    Wnt3a-mediated formation of phosphatidylinositol 4,5-bisphosphate regulates LRP6 phosphorylation (2008)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 2008-09-06
    Description: The canonical Wnt-beta-catenin signaling pathway is initiated by inducing phosphorylation of one of the Wnt receptors, low-density lipoprotein receptor-related protein 6 (LRP6), at threonine residue 1479 (Thr1479) and serine residue 1490 (Ser1490). By screening a human kinase small interfering RNA library, we identified phosphatidylinositol 4-kinase type II alpha and phosphatidylinositol-4-phosphate 5-kinase type I (PIP5KI) as required for Wnt3a-induced LRP6 phosphorylation at Ser1490 in mammalian cells and confirmed that these kinases are important for Wnt signaling in Xenopus embryos. Wnt3a stimulates the formation of phosphatidylinositol 4,5-bisphosphates [PtdIns (4,5)P2] through frizzled and dishevelled, the latter of which directly interacted with and activated PIP5KI. In turn, PtdIns (4,5)P2 regulated phosphorylation of LRP6 at Thr1479 and Ser1490. Therefore, our study reveals a signaling mechanism for Wnt to regulate LRP6 phosphorylation.〈br /〉〈br /〉〈a href="https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2532521/" target="_blank"〉〈img src="https://static.pubmed.gov/portal/portal3rc.fcgi/4089621/img/3977009" border="0"〉〈/a〉   〈a href="https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2532521/" target="_blank"〉This paper as free author manuscript - peer-reviewed and accepted for publication〈/a〉〈br /〉〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Pan, Weijun -- Choi, Sun-Cheol -- Wang, He -- Qin, Yuanbo -- Volpicelli-Daley, Laura -- Swan, Laura -- Lucast, Louise -- Khoo, Cynthia -- Zhang, Xiaowu -- Li, Lin -- Abrams, Charles S -- Sokol, Sergei Y -- Wu, Dianqing -- AR051476/AR/NIAMS NIH HHS/ -- CA132317/CA/NCI NIH HHS/ -- DA018343/DA/NIDA NIH HHS/ -- HL080706/HL/NHLBI NIH HHS/ -- NS36251/NS/NINDS NIH HHS/ -- P30 DA018343/DA/NIDA NIH HHS/ -- R01 AR051476/AR/NIAMS NIH HHS/ -- R01 AR051476-01A1/AR/NIAMS NIH HHS/ -- R01 AR051476-02/AR/NIAMS NIH HHS/ -- R01 AR051476-03/AR/NIAMS NIH HHS/ -- R01 CA132317/CA/NCI NIH HHS/ -- R01 CA132317-01A2/CA/NCI NIH HHS/ -- R01 CA139395/CA/NCI NIH HHS/ -- New York, N.Y. -- Science. 2008 Sep 5;321(5894):1350-3. doi: 10.1126/science.1160741.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Pharmacology, Yale University School of Medicine, New Haven, CT 06510, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/18772438" target="_blank"〉PubMed〈/a〉
    Keywords: Adaptor Proteins, Signal Transducing/metabolism ; Animals ; Axin Protein ; Cell Line ; Frizzled Receptors/metabolism ; Humans ; LDL-Receptor Related Proteins/*metabolism ; Low Density Lipoprotein Receptor-Related Protein-6 ; Mice ; Models, Biological ; Phosphatidylinositol 4,5-Diphosphate/*metabolism ; Phosphoproteins/metabolism ; Phosphorylation ; Phosphotransferases (Alcohol Group Acceptor)/metabolism ; RNA, Small Interfering ; Recombinant Proteins/metabolism ; Repressor Proteins/metabolism ; Serine/metabolism ; Signal Transduction ; Threonine/metabolism ; Wnt Proteins/*metabolism ; Wnt3 Protein ; Wnt3A Protein ; Xenopus/embryology ; Xenopus Proteins
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 2
    Electronic Resource
    Electronic Resource
    Temperature dependence of the properties of heteroepitaxial Y2O3 films grown on Si by ion assisted evaporation (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 198-204 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial Y2O3 films were grown on an Si(111) substrate by ion assisted evaporation in an ultrahigh vacuum, and their properties such as crystallinity, film stress, and morphological change were investigated using the various measurement methods. The crystallinity was assessed by x-ray diffraction (XRD) and reflection high-energy electron diffraction. Interface crystallinity was also examined by Rutherford backscattering spectroscopy (RBS) channeling and transmission electron microscopy. The strain of the films was measured by RBS channeling and XRD. Surface and interface morphological characteristics were observed by atomic force microscopy and x-ray scattering method. By comparing the interface with the surface characteristics, we can conclude that many defects at the interface region were generated by interface interaction between the yttrium metal and Si substrate. Moreover, the film quality dominantly depended on the deposition temperature. The crystallinity was greatly improved and the surface roughness was drastically decreased in the temperature range 500–600 °C. On the other hand, in the temperature range 600–700 °C, the compressive stress and film density were further increased, and the island size decreased. Also, the shape of the surface islands was transformed from elliptical to triangular. The film stress was found primarily at the interface area because of the interaction between yttrium and Si substrate. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370717
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  • 3
    Electronic Resource
    Electronic Resource
    Application of atomic-force-microscope direct patterning to selective positioning of InAs quantum dots on GaAs (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2607-2609 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The application of atomic-force-microscope (AFM) direct patterning to the selective positioning of InAs quantum dots (QDs) on a (100) GaAs substrate has been proposed and experimentally implemented. The AFM direct patterning was used to generate various patterns of several tens of nanometers in size, and InAs QDs were subsequently grown by a metalorganic chemical vapor deposition technique. A nonuniform distribution of the QDs was observed near the patterns. The detailed shape of the QD distribution and the size of the QDs depended on the geometrical properties such as the sidewall angle, the spacing, and the width of the patterns. We have been able to ascertain, through our work, what growth conditions are necessary for QDs' alignment along the patterns. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1318393
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  • 4
    Electronic Resource
    Electronic Resource
    Epitaxial growth of Y2O3 films on Si(100) without an interfacial oxide layer (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 903-905 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial Y2O3 films were grown on Si(100) substrates by the technique of reactive ionized cluster beam deposition. The crystallinity of the films was investigated with reflection high energy electron diffraction (RHEED), glancing angle x-ray diffraction (GXRD), and the interface was examined by high resolution transmission electron microscopy (HRTEM). Under the condition of 5 kV acceleration voltage at the substrate temperature of 800 °C, the Y2O3 film grows epitaxially on the Si(100) substrate. RHEED and GXRD results revealed that the epitaxial relationship between Y2O3 and Si(100) is Y2O3(110)//Si(100), and HRTEM observation showed a sharp interface without an amorphous layer. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119683
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  • 5
    Electronic Resource
    Electronic Resource
    Direct nanometer-scale patterning by the cantilever oscillation of an atomic force microscope (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 292-294 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A resistless nanostructure patterning technique using tip oscillation of an atomic force microscope (AFM) was systematically investigated. Commercial AFM cantilevers are used to successfully generate patterns as narrow as 10 nm on a GaAs surface, without further sharpening of the tips. Reliable patterns with fully controlled width and depth are achieved by adjusting the feedback gain and the scan speed. This process allows nanometer-scale patterning to be performed simply, and is well suited for nanodevice fabrication. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124351
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  • 6
    Electronic Resource
    Electronic Resource
    Sulfur-sulfur bond lengths, or can a bond length be estimated from a single parameter? (1988)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 110 (1988), S. 7299-7301 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00230a005
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  • 7
    Electronic Resource
    Electronic Resource
    Homologation of large rings
    Amsterdam : Elsevier
    Tetrahedron 48 (1992), S. 4773-4792 
    Details
    ISSN: 0040-4020
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/S0040-4020(01)81574-X
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  • 8
    Electronic Resource
    Electronic Resource
    Density difference representation of the charge clouds of the monatomic ions of the alkali halides
    Amsterdam : Elsevier
    Journal of Molecular Structure 92 (1983), S. 167-171 
    Details
    ISSN: 0022-2860
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0022-2860(83)90358-7
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  • 9
    Electronic Resource
    Electronic Resource
    A model for the enzyme-catalyzed, coenzyme B"1"2-dependent interconversion of β-methylaspartate with glutamate
    Amsterdam : Elsevier
    Tetrahedron 44 (1988), S. 2137-2148 
    Details
    ISSN: 0040-4020
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/S0040-4020(01)81721-X
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  • 10
    Electronic Resource
    Electronic Resource
    Density difference representation of the charge clouds of the monatomic ions of the alkali halides
    Amsterdam : Elsevier
    Journal of Molecular Structure: THEOCHEM 92 (1983), S. 167-171 
    Details
    ISSN: 0166-1280
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0166-1280(83)80066-9
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