ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Bulk n+-4H-SiC wafers (n=1-2×1019 cm-3) containing annealing-inducedstacking faults were examined by Raman scattering. The coupled plasmon-LO modewas observed to shift in a manner consistent with 1018 cm-3 doping in the 4H-SiC.Numerical simulations were performed using a self-consistent Poisson-Schrödingersolver and agree well with the experimental observations of carrier transfer from the4H-SiC into the 3C-SiC stacking faults. The Raman data also shows that the 3Cstacking faults induce a tensile strain on the surrounding 4H-SiC regions
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.347.pdf
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