ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
Collection
Keywords
  • 1
    facet.materialart.
    Unknown
    PANGAEA
    In:  Supplement to: Biswas, Haimanti; Cros, Alexander; Yadav, Kamana; Ramana, V Venkata; Prasad, V Rajendra; Archaryya, Tamoghna; Babu, P V Raghunadh (2011): The response of a natural phytoplankton community from the Godavari River Estuary to increasing CO2 concentration during the pre-monsoon period. Journal of Experimental Marine Biology and Ecology, 407(2), 284-293, https://doi.org/10.1016/j.jembe.2011.06.027
    Publication Date: 2024-03-15
    Description: This paper reports for the first time upon the effects of increasing CO2 concentrations on a natural phytoplankton assemblage in a tropical estuary (the Godavari River Estuary in India). Two short-term (5-day) bottle experiments were conducted (with and without nutrient addition) during the pre-monsoon season when the partial pressure of CO2 in the surface water is quite low. The results reveal that the concentrations of total chlorophyll, the phytoplankton growth rate, the concentrations of particulate organic matter, the photosynthetic oxygen evolution rates, and the total bacterial count were higher under elevated CO2 treatments, as compared to ambient conditions (control). delta13C of particulate organic matter (POM) varied inversely with respect to CO2, indicating a clear signature of higher CO2 influx under the elevated CO2 levels. Whereas, delta13CPOM in the controls indicated the existence of an active bicarbonate transport system under limited CO2 supply. A considerable change in phytoplankton community structure was noticed, with marker pigment analysis by HPLC revealing that cyanobacteria were dominant over diatoms as CO2 concentrations increased. A mass balance calculation indicated that insufficient nutrients (N, P and Si) might have inhibited diatomgrowth compared to cyanobacteria, regardless of increased CO2 supply. The present study suggests that CO2 concentration and nutrient supply could have significant effects on phytoplankton physiology and community composition for natural phytoplankton communities in this region. However, this work was conducted during a non-discharge period (nutrient-limited conditions) and the responses of phytoplankton to increasing CO2 might not necessarily be the same during other seasons with high physicochemical variability. Further investigation is therefore needed.
    Keywords: Alkaline phosphatase activity, normalized to particulate organic carbon; Alkaline phosphatase activity, normalized to particulate organic carbon, standard deviation; Alkalinity, total; Alkalinity, total, standard deviation; Aragonite saturation state; Bacteria; Bacteria, abundance, standard deviation; Bicarbonate ion; Biomass/Abundance/Elemental composition; Bottles or small containers/Aquaria (〈20 L); Brackish waters; Calcite saturation state; Calculated; Calculated using CO2SYS; Calculated using seacarb after Nisumaa et al. (2010); Carbon, inorganic, dissolved; Carbon, inorganic, dissolved, standard deviation; Carbon, organic, particulate; Carbon, organic, particulate, standard deviation; Carbon/Nitrogen ratio; Carbon/Nitrogen ratio, standard deviation; Carbonate ion; Carbonate system computation flag; Carbon dioxide; Carbon dioxide, partial pressure, standard deviation; Chlorophyll a; Chlorophyll a, standard deviation; Chlorophyll a/particulate organic carbon ratio; Chlorophyll a/particulate organic carbon ratio, standard deviation; Coulometric titration; Dissolved inorganic nitrogen, standard deviation; Entire community; EPOCA; EUR-OCEANS; European network of excellence for Ocean Ecosystems Analysis; European Project on Ocean Acidification; Fluorescent microscope; Fucoxanthin/chlorophyll a ratio; Fucoxanthin/chlorophyll a ratio, standard devitation; Fugacity of carbon dioxide (water) at sea surface temperature (wet air); Growth/Morphology; Growth rate; Growth rate, standard deviation; Indian Ocean; Isotope ratio mass spectrometry; Laboratory experiment; Mass spectrometry; Nitrogen, inorganic, dissolved; Nitrogen, organic, particulate; OA-ICC; Ocean Acidification International Coordination Centre; Partial pressure of carbon dioxide (water) at sea surface temperature (wet air); Particulate organic nitrogen, standard deviation; Pelagos; pH; pH, standard deviation; Phosphorus, inorganic, dissolved; Phosphorus, inorganic, dissolved, standard deviation; Photosynthetic oxygen evolution, per particulate organic carbon; Photosynthetic oxygen evolution, per particulate organic carbon, standard deviation; Primary production/Photosynthesis; Salinity; Salinity, standard deviation; Silicate; Silicate, standard deviation; Spectrophotometry; Temperature, standard deviation; Temperature, water; Titration potentiometric, 794 Basic Titrino (Metrohm); Tropical; Zeaxanthin/Fucoxanthin ratio; Zeaxanthin/Fucoxanthin ratio, standard devitation; δ13C; δ13C, standard deviation
    Type: Dataset
    Format: text/tab-separated-values, 351 data points
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    Publication Date: 2019-07-16
    Repository Name: EPIC Alfred Wegener Institut
    Type: Article , isiRev
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 3
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5625-5629 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of deposition temperature on growth, composition, structure, adhesion properties, stress, and resistivity of chemically vapor deposited W deposited purely by SiH4 reduction of WF6 are discussed. At lower deposition temperatures, due to incomplete Si reduction reaction, a small amount of Si is incorporated in the film. This elemental Si in W is responsible for the observed high stresses and high resistivities over a wide temperature range. With the increase in the deposition temperature, the conversion of incorporated Si as well as the initial Si reduction are taking place, stimulating increased grain growth and thereby relieving stress and reducing resistivity. The optimum values for stress and resistivity are achieved around 500 °C, as Si content is at its minimum. At higher temperatures the reaction between residual Si and W, is the prime cause of resistivity increase.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1428-1441 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper addresses the kinetics and related mechanisms of non-self-limiting nature of Si reduction of WF6 in cold wall systems for the first time. The growth of such films in low-pressure chemical-vapor deposition (LPCVD) and ultrahigh vacuum (UHV) systems is compared. Both systems produce non-self-limiting, uniform, controllable, nonporous films. The growth is controlled by process parameters such as the wafer temperature and WF6 concentration at the wafer surface. The order of the Si reduction reaction is 0.5 in the concentration of WF6. The tungsten films deposited in the LPCVD system contaminated with water vapor are thicker than the films grown in the UHV system even when the temperature is below 450 °C. Such thicker films are produced as a result of the formation of an amorphous W-O layer. From the thermodynamic considerations, the origin of W-O layer is attributed to a parallel reaction between water vapor, WF6, and substrate Si. The beneficial role played by the W-O layer is that it prevents any volume shrinkage of the converted layer and restricts lateral encroachment. In the absence of such a layer as in the case of the UHV system, severe volume shrinkage and encroachment are observed. A theoretical model together with physical mechanisms explaining the non-self-limiting phenomenon are proposed. The mechanism suggests that a fine-grained W structure surrounded by a W-O layer, formed in the LPCVD system, assists faster out-diffusion of Si through the tungsten films compared to the UHV system. The higher values of the diffusion coefficient for Si out-diffusion through films grown in the LPCVD system as compared with the UHV system support this mechanism. The out-diffused Si is substituted to W by reduction reaction to complete the film growth.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 1336-1338 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A miniature high-pressure cell for electrical and galvanomagnetic measurements down to 2 K has been designed and fabricated. The Bridgman anvils are made of either tungsten carbide, or reinforced alumina, for pressures up to 8 and 4 GPa, respectively. This cell is calibrated both at high pressures and at low temperatures. The pressure clamped at room temperature is not found to vary significantly when cooled down to liquid helium temperatures.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2847-2853 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The hole transport properties of gallium antimonide with various degrees of tellurium compensation have been investigated in the temperature range of 4.2–300 K. For the undoped GaSb, the p-type conductivity arises from a doubly ionizable native defect VGa GaSb. In the Te compensated samples, apart from the Te-donor level and the VGaGaSb center, an acceptor level resulting from complexation of VGa GaSb with TeSb has been found. This acceptor level lies ∼70 meV above the valence band edge. The concentration of this center depends on the melt composition and the level of Te present in the melt during growth of crystals. Most interestingly, at very low level of Te concentration, an additional triple native acceptor (VGa GaSb VGa) has also been observed. With the increase in Te concentration, the mobility decreases and a shift in the mobility peak to higher temperature is observed. The low-temperature mobility is limited by ionized impurity scattering. At higher temperatures, the scattering mechanisms depend on Te concentration in the sample. In this regime, significant contributions from acoustic, nonpolar optical, and polar optical phonon scattering are observed for samples with low levels of Te. In contrast, the impurity scattering dominates even at room temperature for highly compensated crystals. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6861-6863 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The La0.6Pb0.4MnO3(LPMO) thin films were in situ deposited at different oxygen partial pressure and at a substrate temperature of 630 °C by pulsed laser deposition. The films grown at lower oxygen partial pressures showed an increase in lattice parameter and resistivity and a decrease in the insulator–metal transition temperature as compared to the stoichiometric LPMO thin film grown at 400 mTorr. Further, these oxygen-deficient thin films showed over 70% giant magnetoresistance (GMR) near the insulator–metal transition temperature against the 40% GMR in the case of stoichiometric thin films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3923-3925 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly textured, as-deposited La0.6Pb0.4MnO3 thin films have been grown on LaAlO3 by pulsed laser deposition. The films are ferromagnetic metals below 300 K. Giant negative magnetoresistance of over 40% is observed at 300 K at 6 T.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 10
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...