Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
75 (1999), S. 489-491
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
SiO2 was thermally grown on arrays of silicon planes obtained from 〈110〉 substrates by means of micromachining. Blue photoluminescence was observed under pulsed-laser excitation from SiO2 grown on these planes. Experiments revealed that this emission was not affected by the Si/SiO2 interface properties or the silicon thickness, whereas its intensity and spectral features depended on the oxide thickness. Moreover, no detectable luminescence was observed from the oxide grown on unpatterned regions, where a smaller amount of oxide was excited by the laser beam. The photoluminescence disappeared when the oxide was removed. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.124425
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