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  • 1
    Electronic Resource
    Electronic Resource
    Preferred alignment of twin boundaries in YBa2Cu3Ox thin films and YBa2Cu3Ox/PrBa2Cu3Ox superlattices on SrTiO3 (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2174-2176 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of YBa2Cu3Ox thin films and YBa2Cu3Ox/PrBa2Cu3Ox superlattice films grown on (00L) SrTiO3 substrates has been studied using x-ray diffraction and transmission electron microscopy. The films consist of four symmetry-equivalent domains related by mutually perpendicular (hh0) and (hh¯0) twin boundaries. One twin orientation is often highly favored over the other. We have correlated this in-plane symmetry breaking with small miscuts of the substrate surface towards the [HH0] direction and propose that interfacial steps act as nucleation sites for twins. Thus, by controlling the surface normal, a technique is described for producing films containing aligned twin boundaries.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104997
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  • 2
    Electronic Resource
    Electronic Resource
    Spatially selective photochemical vapor deposition of GaAs on synthetic fused silica (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 595-597 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photochemical vapor deposition of polycrystalline GaAs on synthetic fused silica is reported here. A Hg-Xe arc lamp is used as the light source with triethylgallium and arsine serving as the reactants. We report, for the first time, on a GaAs deposition process using the above-mentioned light source and reactants which is completely controlled by the light source with no deposition occurring in the absence of light. GaAs thin films of thicknesses up to 1.6 μm have been deposited. X-ray diffraction, energy-dispersive spectrometry, and optical transmittance are used to analyze these films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100631
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  • 3
    Electronic Resource
    Electronic Resource
    Hydrogen-assisted pulsed-laser deposition of epitaxial CeO2 films on (001)InP (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 106-108 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the growth of epitaxial CeO2 on (001) InP using hydrogen-assisted pulsed-laser deposition. Epitaxy is achieved via laser ablation of a CeO2 target in the presence of molecular hydrogen that is introduced during nucleation to reduce native In2O3 from the InP surface. X-ray diffraction scans confirm a cube-on-cube epitaxial relationship between the oxide film and the InP substrate. Rapid heating to the deposition temperature proved important in avoiding significant decomposition of the InP surface prior to film growth. This result should enable the integration of electronic oxide functionality with InP-based semiconductor technologies, and provide a means to explore InP metal–oxide–semiconductor field-effect transistor structures. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1431696
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  • 4
    Electronic Resource
    Electronic Resource
    Nucleation of epitaxial yttria-stabilized zirconia on biaxially textured (001) Ni for deposited conductors (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2427-2429 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nucleation of (001)-oriented yttria-stabilized zirconia (YSZ) directly on the (001) Ni surface is realized via nucleation on an oxygen-terminated nickel surface using pulsed-laser deposition. Under conditions where the nickel surface is either oxygen free or substantially covered with NiO, a mixed orientation of YSZ occurs. The epitaxial YSZ layer grown on a biaxially textured Ni(001) surface was used as a single buffer layer for a high temperature superconducting coated conductor architecture, yielding superconducting YBa2Cu3O7 films with high critical current densities, Jc. This architecture eliminates the necessity for a multilayer buffer architecture, since high Jc superconducting films are achieved with no intermediate buffer layer between the (001) YSZ and the biaxially textured metal. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126365
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  • 5
    Electronic Resource
    Electronic Resource
    Hydrogen-assisted pulsed-laser deposition of (001)CeO2 on (001) Ge (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1677-1679 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of epitaxial (001)CeO2 on a (001) Ge surface using a hydrogen-assisted pulsed-laser deposition method is reported. Hydrogen gas is introduced during film growth in order to reduce or eliminate the presence of the GeO2 from the semiconductor surface during the initial nucleation of the metal–oxide film. The hydrogen partial pressure and substrate temperature are selected to be sufficiently high such that the germanium native oxides are thermodynamically unstable. The Gibbs free energy of CeO2 is larger in magnitude than that of the Ge native oxides, making it more favorable for the metal–oxide to reside at the interface in comparison to the native Ge oxides. By satisfying these criteria, the metal–oxide/semiconductor interface is shown to be atomically abrupt with no native oxide present. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126133
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  • 6
    Electronic Resource
    Electronic Resource
    Plume-induced stress in pulsed-laser deposited CeO2 films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2134-2136 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Residual compressive stress due to plume-induced energetic particle bombardment in CeO2 films deposited by pulsed-laser deposition is reported. For laser ablation film growth in low pressures, stresses as high as 2 GPa were observed as determined by substrate curvature and four-circle x-ray diffraction. The amount of stress in the films could be manipulated by controlling the kinetic energies of the ablated species in the plume through gas-phase collisions with an inert background gas. The film stress decreased to near zero for argon background pressures greater than 50 mTorr. At these higher background pressures, the formation of nanoparticles in the deposited film was observed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123780
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  • 7
    Electronic Resource
    Electronic Resource
    High critical current density superconducting tapes by epitaxial deposition of YBa2Cu3Ox thick films on biaxially textured metals (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1795-1797 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method to obtain long lengths of flexible, biaxially oriented substrates with smooth, chemically compatible surfaces for epitaxial growth of high-temperature superconductors is reported. The technique uses well established, industrially scalable, thermomechanical processes to impart a strong biaxial texture to a base metal. This is followed by vapor deposition of epitaxial buffer layers (metal and/or ceramic) to yield chemically compatible surfaces. Epitaxial YBa2Cu3Ox films grown on such substrates have critical current densities exceeding 105 A/cm2 at 77 K in zero field and have field dependencies similar to epitaxial films on single crystal ceramic substrates. Deposited conductors made using this technique offer a potential route for the fabrication of long lengths of high-Jc wire capable of carrying high currents in high magnetic fields and at elevated temperatures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117489
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  • 8
    Electronic Resource
    Electronic Resource
    Bend strain tolerance of critical currents for YBa2Cu3O7 films deposited on rolled-textured (001)Ni (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1904-1906 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting YBa2Cu3O7/CeO2/YSZ/CeO2 multilayer structures were grown on rolled-textured (001)Ni using pulsed-laser deposition. Critical current densities greater than 1 MA/cm2 were obtained for relatively thick YBa2Cu3O7 films. The compressive and tensile bend strain tolerance of critical currents for the YBa2Cu3O7 films deposited on these rolling-assisted biaxially textured substrates was also determined. These conductors retained up to 80% of their unstrained critical currents for applied compressive bend diameters as small as 1.5 cm and tensile bend diameters of 3.2 cm. The degradation of Jc is caused by the formation and propagation of transverse cracks. The results also suggest a correlation between bend-strain tolerance for these coated conductors and total oxide layer thickness. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122321
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  • 9
    Electronic Resource
    Electronic Resource
    Alternating current losses in biaxially textured YBa2Cu3O7−δ films deposited on Ni tapes (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2029-2031 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: YBa2Cu3O7−δ films grown on rolling-assisted biaxially textured substrates carry critical current densities 105–106 A/cm2 at 77 K and low applied magnetic fields. In the low-field and low-current regime, ac transport current studies show hysteresis energy loss (per cycle and per unit length) roughly the value expected for a superconductor of elliptic cross section. The critical current Ic was deduced from observed dc and dynamic current-voltage relations. The power loss rises sharply as I0 (the maximum current in each cycle) is raised above Ic. In the present configuration, ferromagnetic hysteresis of the Ni substrate contributes little or no loss. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119777
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  • 10
    Electronic Resource
    Electronic Resource
    Semiconducting epitaxial films of metastable SrRu0.5Sn0.5O3 grown by pulsed laser deposition (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2147-2149 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Synthesis of the perovskite solid solution that forms between metallic SrRuO3 and insulating SrSnO3 is reported. This material is proposed as a conducting thin-film electrode/epitaxial-substrate material. While the bulk solid solution could not be formed, thin films of single-phase SrRu0.5Sn0.5O3 were grown on (001) KTaO3 single-crystal substrates by pulsed laser deposition. These films exhibit a commensurate in-plane lattice match with KTaO3 (a=3.989 Å); accordingly, the lattice constant of SrRu0.5Sn0.5O3 is larger than that of commonly used conducting-oxide thin-film electrodes (e.g., SrRuO3, LaNiO3, and YBa2Cu3O7−δ). The SrRu0.5Sn0.5O3 films were analyzed using x-ray diffraction, Rutherford backscattering, atomic force microscopy, Z-contrast transmission electron microscopy, and Hall effect measurements. The results revealed excellent atomic-scale structural properties, flat surfaces (13 Å rms roughness), and p-type conduction with a room-temperature resistivity of 16 mΩ cm. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119082
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