ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A laterally segregated diffusion barrier was investigated for Cu metallization. In this scheme, the intended final structure is composed of two different barrier materials; one is the parent barrier layer (TiN, in our case) and the other (Al2O3, in this case) is segregated laterally along the grain boundaries of the parent barrier layer. As a result, the fast diffusion paths, the so-called grain boundaries of the parent diffusion barrier, are effectively passivated. To realize this type of barrier experimentally, the TiN(5 nm)/Al(2 nm)/TiN(5 nm) structure was fabricated by sequential sputtering and compared with TiN(10 nm) as a diffusion barrier against Cu. The etch pit test results indicated that the barrier with the Al interlayer prevented Cu diffusion into the Si up to 650 °C, which is 250 °C higher than achieved by a TiN(10 nm) barrier. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1409594
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