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  • 1
    Publication Date: 2011-10-28
    Description: Parasitic diseases have a devastating, long-term impact on human health, welfare and food production worldwide. More than two billion people are infected with geohelminths, including the roundworms Ascaris (common roundworm), Necator and Ancylostoma (hookworms), and Trichuris (whipworm), mainly in developing or impoverished nations of Asia, Africa and Latin America. In humans, the diseases caused by these parasites result in about 135,000 deaths annually, with a global burden comparable with that of malaria or tuberculosis in disability-adjusted life years. Ascaris alone infects around 1.2 billion people and, in children, causes nutritional deficiency, impaired physical and cognitive development and, in severe cases, death. Ascaris also causes major production losses in pigs owing to reduced growth, failure to thrive and mortality. The Ascaris-swine model makes it possible to study the parasite, its relationship with the host, and ascariasis at the molecular level. To enable such molecular studies, we report the 273 megabase draft genome of Ascaris suum and compare it with other nematode genomes. This genome has low repeat content (4.4%) and encodes about 18,500 protein-coding genes. Notably, the A. suum secretome (about 750 molecules) is rich in peptidases linked to the penetration and degradation of host tissues, and an assemblage of molecules likely to modulate or evade host immune responses. This genome provides a comprehensive resource to the scientific community and underpins the development of new and urgently needed interventions (drugs, vaccines and diagnostic tests) against ascariasis and other nematodiases.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Jex, Aaron R -- Liu, Shiping -- Li, Bo -- Young, Neil D -- Hall, Ross S -- Li, Yingrui -- Yang, Linfeng -- Zeng, Na -- Xu, Xun -- Xiong, Zijun -- Chen, Fangyuan -- Wu, Xuan -- Zhang, Guojie -- Fang, Xiaodong -- Kang, Yi -- Anderson, Garry A -- Harris, Todd W -- Campbell, Bronwyn E -- Vlaminck, Johnny -- Wang, Tao -- Cantacessi, Cinzia -- Schwarz, Erich M -- Ranganathan, Shoba -- Geldhof, Peter -- Nejsum, Peter -- Sternberg, Paul W -- Yang, Huanming -- Wang, Jun -- Wang, Jian -- Gasser, Robin B -- Howard Hughes Medical Institute/ -- England -- Nature. 2011 Oct 26;479(7374):529-33. doi: 10.1038/nature10553.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Faculty of Veterinary Science, The University of Melbourne, Parkville, Victoria 3010, Australia. ajex@unimelb.edu.au〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/22031327" target="_blank"〉PubMed〈/a〉
    Keywords: Animals ; Antinematodal Agents ; Ascariasis/drug therapy/parasitology ; Ascaris suum/drug effects/*genetics ; Drug Design ; Genes, Helminth/genetics ; Genome, Helminth/*genetics ; Genomics ; Molecular Sequence Annotation ; Molecular Targeted Therapy
    Print ISSN: 0028-0836
    Electronic ISSN: 1476-4687
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
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  • 2
    Publication Date: 2011-11-18
    Description: Legumes (Fabaceae or Leguminosae) are unique among cultivated plants for their ability to carry out endosymbiotic nitrogen fixation with rhizobial bacteria, a process that takes place in a specialized structure known as the nodule. Legumes belong to one of the two main groups of eurosids, the Fabidae, which includes most species capable of endosymbiotic nitrogen fixation. Legumes comprise several evolutionary lineages derived from a common ancestor 60 million years ago (Myr ago). Papilionoids are the largest clade, dating nearly to the origin of legumes and containing most cultivated species. Medicago truncatula is a long-established model for the study of legume biology. Here we describe the draft sequence of the M. truncatula euchromatin based on a recently completed BAC assembly supplemented with Illumina shotgun sequence, together capturing approximately 94% of all M. truncatula genes. A whole-genome duplication (WGD) approximately 58 Myr ago had a major role in shaping the M. truncatula genome and thereby contributed to the evolution of endosymbiotic nitrogen fixation. Subsequent to the WGD, the M. truncatula genome experienced higher levels of rearrangement than two other sequenced legumes, Glycine max and Lotus japonicus. M. truncatula is a close relative of alfalfa (Medicago sativa), a widely cultivated crop with limited genomics tools and complex autotetraploid genetics. As such, the M. truncatula genome sequence provides significant opportunities to expand alfalfa's genomic toolbox.〈br /〉〈br /〉〈a href="https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3272368/" target="_blank"〉〈img src="https://static.pubmed.gov/portal/portal3rc.fcgi/4089621/img/3977009" border="0"〉〈/a〉   〈a href="https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3272368/" target="_blank"〉This paper as free author manuscript - peer-reviewed and accepted for publication〈/a〉〈br /〉〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Young, Nevin D -- Debelle, Frederic -- Oldroyd, Giles E D -- Geurts, Rene -- Cannon, Steven B -- Udvardi, Michael K -- Benedito, Vagner A -- Mayer, Klaus F X -- Gouzy, Jerome -- Schoof, Heiko -- Van de Peer, Yves -- Proost, Sebastian -- Cook, Douglas R -- Meyers, Blake C -- Spannagl, Manuel -- Cheung, Foo -- De Mita, Stephane -- Krishnakumar, Vivek -- Gundlach, Heidrun -- Zhou, Shiguo -- Mudge, Joann -- Bharti, Arvind K -- Murray, Jeremy D -- Naoumkina, Marina A -- Rosen, Benjamin -- Silverstein, Kevin A T -- Tang, Haibao -- Rombauts, Stephane -- Zhao, Patrick X -- Zhou, Peng -- Barbe, Valerie -- Bardou, Philippe -- Bechner, Michael -- Bellec, Arnaud -- Berger, Anne -- Berges, Helene -- Bidwell, Shelby -- Bisseling, Ton -- Choisne, Nathalie -- Couloux, Arnaud -- Denny, Roxanne -- Deshpande, Shweta -- Dai, Xinbin -- Doyle, Jeff J -- Dudez, Anne-Marie -- Farmer, Andrew D -- Fouteau, Stephanie -- Franken, Carolien -- Gibelin, Chrystel -- Gish, John -- Goldstein, Steven -- Gonzalez, Alvaro J -- Green, Pamela J -- Hallab, Asis -- Hartog, Marijke -- Hua, Axin -- Humphray, Sean J -- Jeong, Dong-Hoon -- Jing, Yi -- Jocker, Anika -- Kenton, Steve M -- Kim, Dong-Jin -- Klee, Kathrin -- Lai, Hongshing -- Lang, Chunting -- Lin, Shaoping -- Macmil, Simone L -- Magdelenat, Ghislaine -- Matthews, Lucy -- McCorrison, Jamison -- Monaghan, Erin L -- Mun, Jeong-Hwan -- Najar, Fares Z -- Nicholson, Christine -- Noirot, Celine -- O'Bleness, Majesta -- Paule, Charles R -- Poulain, Julie -- Prion, Florent -- Qin, Baifang -- Qu, Chunmei -- Retzel, Ernest F -- Riddle, Claire -- Sallet, Erika -- Samain, Sylvie -- Samson, Nicolas -- Sanders, Iryna -- Saurat, Olivier -- Scarpelli, Claude -- Schiex, Thomas -- Segurens, Beatrice -- Severin, Andrew J -- Sherrier, D Janine -- Shi, Ruihua -- Sims, Sarah -- Singer, Susan R -- Sinharoy, Senjuti -- Sterck, Lieven -- Viollet, Agnes -- Wang, Bing-Bing -- Wang, Keqin -- Wang, Mingyi -- Wang, Xiaohong -- Warfsmann, Jens -- Weissenbach, Jean -- White, Doug D -- White, Jim D -- Wiley, Graham B -- Wincker, Patrick -- Xing, Yanbo -- Yang, Limei -- Yao, Ziyun -- Ying, Fu -- Zhai, Jixian -- Zhou, Liping -- Zuber, Antoine -- Denarie, Jean -- Dixon, Richard A -- May, Gregory D -- Schwartz, David C -- Rogers, Jane -- Quetier, Francis -- Town, Christopher D -- Roe, Bruce A -- BB/G023832/1/Biotechnology and Biological Sciences Research Council/United Kingdom -- BBS/B/11524/Biotechnology and Biological Sciences Research Council/United Kingdom -- England -- Nature. 2011 Nov 16;480(7378):520-4. doi: 10.1038/nature10625.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Plant Pathology, University of Minnesota, St Paul, Minnesota 55108, USA. neviny@umn.edu〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/22089132" target="_blank"〉PubMed〈/a〉
    Keywords: *Biological Evolution ; *Genome, Plant ; Medicago truncatula/*genetics/*microbiology ; Molecular Sequence Data ; Nitrogen Fixation/genetics ; Rhizobium/*physiology ; Soybeans/genetics ; *Symbiosis ; Synteny ; Vitis/genetics
    Print ISSN: 0028-0836
    Electronic ISSN: 1476-4687
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
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  • 3
    Publication Date: 2014-03-07
    Description: Ultra-large-scale integrated (ULSI) circuits have benefited from successive refinements in device architecture for enormous improvements in speed, power efficiency and areal density. In large-area electronics (LAE), however, the basic building-block, the thin-film field-effect transistor (TFT) has largely remained static. Now, a device concept with fundamentally different operation, the source-gated transistor (SGT) opens the possibility of unprecedented functionality in future low-cost LAE. With its simple structure and operational characteristics of low saturation voltage, stability under electrical stress and large intrinsic gain, the SGT is ideally suited for LAE analog applications. Here, we show using measurements on polysilicon devices that these characteristics lead to substantial improvements in gain, noise margin, power-delay product and overall circuit robustness in digital SGT-based designs. These findings have far-reaching consequences, as LAE will form the technological basis for a variety of future developments in the biomedical, civil engineering, remote sensing, artificial skin areas, as well as wearable and ubiquitous computing, or lightweight applications for space exploration. Scientific Reports 4 doi: 10.1038/srep04295
    Electronic ISSN: 2045-2322
    Topics: Natural Sciences in General
    Published by Springer Nature
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 187-190 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mobile ions in oxides formed on silicon by low-temperature processes have been studied using a combination of bias-temperature stress and triangular voltage sweep experiments. It is found that these oxides contain intrinsically low concentrations of mobile ions (〈1010 cm−2) and that the ionic instabilities which are seen are due to alkali metal ions rather than other contaminants or the inherent water and hydrogen. Mobile sodium behaves slightly differently in low-temperature oxides compared with conventional thermal oxides, and can be gettered and passivated using a low-temperature process. It is shown that sodium ions are trapped by polycrystalline silicon during plasma hydrogenation, and that atomic hydrogen is involved in this process. The trapped ions are released back into the oxide during subsequent bias-temperature stressing.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3567-3575 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-dose silicon implants have been used to preamorphize the surface of single-crystal silicon prior to the implantation of low-energy BF2. The preamorphization results in shallow junction formation with minimal channeling of the boron, but high concentrations of electrically active defects are formed, leading to excessive reverse bias leakage currents. Measurements of leakage current and deep-level defects indicated that two distinct types of electrically active defects were important: those associated with what are probably complexes or clusters of point defects located near the far end of the range of the implanted silicon, and those associated with extended defects (loops) at the edge of the regrown amorphous region. The former defects were deep-level donors present in high concentrations (〉1017 cm−3) after regrowth of the amorphous layer at 600 or 700 °C and resulted in leakage currents 〉10−4 A/cm2. These centers could be annealed out at 800 °C reducing the leakage current to values between 5×10−8 and 2×10−5 A/cm2 depending upon the relative locations of the extended defects and the metallurgical junction. Measurements and modeling have shown that the location of the band of extended defects is critical in controlling the leakage current and that it will need to be a few hundred angstroms shallower than the junction itself for the associated generation current to be fully suppressed.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3441-3443 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly conducting silicon layers of less than 500 A(ring) in thickness have been formed following the implantation of 12-keV antimony or 10-keV arsenic and subsequent annealing at 700 °C for 15 min. Minimum resistivities of 2.2×10−4 Ω cm for antimony and 6.5×10−4 Ω cm for arsenic at a dose of 1×1015 cm−2 are obtained, with corresponding peak electrical activities of ∼4.8×1020 cm−3 and ∼1.6×1020 cm−3, respectively. Both correspond to metastable states well above the equilibrium solid solubilities. Whereas the arsenic activity remains almost unchanged for anneals of up to ∼300 min, the higher antimony activity decreases, but remains above that of the arsenic.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2189-2194 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon layers implanted with 10 keV arsenic have been characterized using the differential Hall effect, secondary-ion-mass spectrometry, and Rutherford backscattering. Arsenic has been implanted to doses up to 2×1015 cm−2 and the layers have been annealed for 15 min at temperatures in the range 600–900 °C. The maximum free-carrier concentration and sheet resistance obtainable are 2.8×1014 cm−2 and 320 Ω/(D'Alembertian), respectively, for a dose of 1×1015 cm−2 annealed at 700 °C. There is evidence for both the loss of arsenic into a thin surface layer and the incomplete electrical activation of the arsenic remaining in the bulk. It is proposed that incomplete electrical activation is due to clustering in the amorphous phase during the solid-phase-epitaxial regrowth of the layer rather than clustering in the crystalline phase after the regrowth has occurred.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Analytical chemistry 47 (1975), S. 2373-2376 
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Analytical chemistry 48 (1976), S. 427-429 
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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