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  • 1
    Electronic Resource
    Electronic Resource
    Neutron irradiation defects in gallium sulfide: Optical absorption measurements (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6651-6656 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gallium sulfide single crystals have been irradiated with different thermal neutron doses. Defects introduced by neutron irradiation turn out to be optically active, giving rise to absorption bands with energies ranging from 1.2 to 3.2 eV. Bands lying in the band-gap exhibit Gaussian shape. Their energies and widths are independent of the irradiation dose, but their intensities are proportional to it. Thermal annealing is completed in two stages, ending at around 500 and 720 K, respectively. Centers responsible for the absorption bands are proposed to be gallium-vacancy-galliuminterstitial complexes in which the distance between the vacancy (acceptor) and the interstitial (donor) determines the energy and intensity of the absorption band, as well as the annealing temperature. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365204
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  • 2
    Electronic Resource
    Electronic Resource
    The application of the photoacoustic transmittance oscillations for determining elastic constants in gallium and indium selenides (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3200-3204 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmittance periodic oscillations are observed in GaSe and InSe on excitation with optical pulses. Such oscillations are explained in terms of photoacoustic generation of dilatational waves, which become resonant within the crystal. Spectral analysis of those oscillations in samples of different thickness has led to an accurate determination of the longitudinal acoustic-wave velocity along the crystallographic axis c. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361219
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  • 3
    Electronic Resource
    Electronic Resource
    Optical properties of zinc phosphide (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3282-3288 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical absorption edge of Zn3P2 has been measured by transmittance and photoconductivity at 300 K. The absorption coefficient in both polarizations is shown to follow the expected behavior for indirect gaps at 1.39 and 1.41 eV in parallel and perpendicular configurations. The high-absorption region has been measured in thin single crystals and the absorption coefficient is shown to agree with the optical constants derived from reflectivity for values of the absorption coefficient up to 105 cm−1. The optical properties and the behavior of photoconductivity are discussed in view of possible applications of Zn3P2 to solar energy conversion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337719
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  • 4
    Electronic Resource
    Electronic Resource
    Light-induced transmission nonlinearities in gallium selenide (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3780-3785 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The intensity of a He–Ne laser (633 nm, 5 mW) transmitted by different GaSe samples is observed to change in correlation with a Nd-yttrium–aluminum–garnet laser pulse (532 nm, 7.8 ns, 3 mJ) which excites them. Such time response has been attributed to a nonlinear optical effect, i.e., a decrease in the refractive index due to the exciton screening by the photogenerated carriers. A calculation of the absorption coefficient and refractive index at different carrier concentrations has led to a reconstruction of transmittance transients which fully agree with the experimental data at different incident intensities and temperatures.© 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369748
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  • 5
    Electronic Resource
    Electronic Resource
    Parametric decays of a circularly polarized electromagnetic wave in an electron–positron plasma (1998)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 5 (1998), S. 3171-3179 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Parametric decays of a circularly polarized electromagnetic wave in an electron–positron unmagnetized plasma are studied. Like in the case of a plane polarized wave, there are two distinctive situations. One in which vs/c〈c/vp (vs is the electroacoustic speed, c the speed of light, and vp is the phase velocity of the electromagnetic wave), and the other situation when vs/c≥c/vp. In the first case, there is an ordinary decay instability and two modulational instabilities. One of the modulational instabilities is a resonant instability, and the other is a nonresonant, essentially electromagnetic instability in which the pump wave decays into two sideband waves. In the second situation (vs/c≥c/vp), there are two modulational instabilities similar to the previous situation, but as the intensity of the pump wave increases, the resonant modulational instability disappears and only the nonresonant electromagnetic instability remains. The effect of Landau damping on the electroacoustic modes is also studied. This effect is simulated through a collisional term in the fluid equations. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.873045
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  • 6
    Electronic Resource
    Electronic Resource
    Response to "Comment on ‘Parametric decays of a circularly polarized electromagnetic wave in an electron–positron plasma' " [Phys. Plasmas 6, 633 (1999)] (1999)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 6 (1999), S. 635-635 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this response we shall rebut what we consider to be misleading statements in the comment by Shukla and Stenflo (hereafter referred to as SS). © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.873219
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  • 7
    Electronic Resource
    Electronic Resource
    Structural defects in Hg1−xCdxI2 layers grown on CdTe substrates by vapor phase epitaxy (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4889-4891 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hg1−xCdxI2 20–25-μm-thick layers with a uniform composition in the range of x=0.1–0.2 were grown on CdTe substrates by vapor phase epitaxy (VPE). The growth was carried out using an α-HgI2 polycrystalline source at 200 °C and in the time range of 30–100 h. The layers were studied by scanning electron microscopy (SEM) and high resolution synchrotron x-ray topography (SXRT). The SEM and SXRT images of Hg1−xCdxI2 VPE layers allow one to identify the defects affecting the layer structure. The two main types of structural defects in the layers are subgrain boundaries and densely spaced striations similar to those referred generally to as vapor grown HgI2 bulk crystals. The effect of the growth time on these defects has been analyzed and on the basis of this it has been possible to grow Hg1−xCdxI2 layers with low defect density.© 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366352
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  • 8
    Electronic Resource
    Electronic Resource
    Hg1−xCdxI2/CdTe heterostructures for nuclear radiation detectors: Effect of epitaxial growth on substrate properties (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2023-2025 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the possibility to fabricate nuclear radiation detectors operating at room temperature from CdTe substrates affected by the vapor phase epitaxy (VPE) growth of Hg1−xCdxI2 layers. The VPE layers with the thickness 10–30 μm were grown using an α-HgI2 polycrystalline source at 220 °C and time in the range of 30–100 h. The as-grown heterostructures were chemically etched to remove the epilayers, and Au–CdTe–Au detectors were made. The substrates were characterized by synchrotron x-ray topography before and after the VPE growth, and the current–voltage (I–V) and spectroscopic measurements of the detectors were carried out. The effect of the VPE growth on the substrates and detectors has been studied and on the basis of this it has been possible to fabricate γ-ray detectors with Ohmic I–V characteristic and good spectral response. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121253
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  • 9
    Electronic Resource
    Electronic Resource
    Substrate effect on CdTe layers grown by metalorganic vapor phase epitaxy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1314-1316 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdTe layers were grown by metalorganic vapor phase epitaxy (MOVPE) on different substrates like sapphire, GaAs, and CdTe wafers. The growth was carried out at the temperature 340 °C and time in the range of 2–4 h using dimethyl-cadmium and diisopropil-tellurium as precursors. The layers were studied by scanning electron microscopy, Rutherford backscattering spectroscopy, and high resolution low-temperature photoluminescence spectroscopy. The surface morphology and RBS and PL spectra of CdTe MOVPE layers are reported and the substrate effect on the layer properties is demonstrated. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118522
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  • 10
    Electronic Resource
    Electronic Resource
    Growth and survival response of the Catarina scallop Argopecten circularis (Sowerby) to stocking density and length of culture period (1996)
    Oxford, UK : Blackwell Publishing Ltd
    Aquaculture research 27 (1996), S. 0 
    Details
    ISSN: 1365-2109
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Growth and survival of the Catarina scallop, Argopecten circularis (Sowerby), were determined in relation to stocking density and length of culture period. Data were analysed by means of the von Bertalanffy growth equation and the weight-length allometric relationship. A mortality equation was empirically derived from the experimental data. Stocking density significantly affected both growth (P〈0.05) and mortality parameters (P〈0.01). The coefficients for the weight-length relationship. however, were not affected by stocking density. Mortality was highly variable, both during the culture period and between the different stocking densities. Two mortality patterns were identified. One was associated with post-spawning mortality and lower stocking rates. The other occurred at high densities where increased temperatures and overstocking provoked high mortalities and extremely divergent survival responses. The results showed that mortality, rather than growth, reflects more accurately the effects of density, and that better survival is not necessarily produced by stocking at the lowest rate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2109.1996.00779.x
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