ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Infrared dielectric constant of gallium arsenide (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6939-6942 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The real dielectric constant of gallium arsenide has been determined at 300 and at 5 K from fits to observed interference in transmission of thin samples with parallel surfaces. Measurement was carried out over all or part of the range 30–4000 cm−1. An accuracy of ±0.5% is estimated based on the quality of the analytic fits and the sample thickness measurement technique. We find at 300 K, ε0=12.90 and ε∞=10.86. At 5 K, ε0=12.46 and ε∞=10.58. An analytic expression for the dielectric function is given which allows accurate values of the real dielectric constant to be determined throughout most of the 0–4000 cm−1 spectral range. The observed ratio ε0/ε∞ agrees with the Lyddane–Sachs–Teller relation calculated with Raman values of transverse and longitudinal optical phonon frequencies to better than 0.1% at 300 and at 5 K. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363818
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Infrared dielectric constant of cubic SiC (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7255-7258 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The real dielectric constant for chemical vapor deposition 3C-SiC grown on silicon (Si) has been determined at 300 K and at 5 K from an analytic fit to interference fringes in transmission over the spectral range from the near infrared to the submillimeter region. This technique is capable of high accuracy being limited typically by the sample thickness and accuracy with which the thickness is measured. The resulting real dielectric constant is lower than the values usually attributed to this material. We find: at 300 K ε 0=9.52 and ε ∞=6.38; at 5 K ε0=9.28 and ε ∞=6.22. In all cases the estimated error is ±0.8%. The observed ratio ε0 /ε∞ agrees with the Lyddane–Sachs–Teller relation to 0.1% at 300 K and 0.2% at 5 K. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360438
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Model for the ∼1.28-eV double-acceptor luminescence in GaAs (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2535-2537 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The 1.283-eV luminescence band observed in GaAs grown from Ga-rich melts is attributed to a donor–double-acceptor pair transition which leaves the negatively charged final state of the double acceptor in the 2S3/2 excited state. This assignment is shown to be consistent with the estimated energy of such a transition and with the results of Hall effect, infrared absorption, and luminescence measurements. It is proposed that similar emission bands should be observed for other double acceptors and that their observation provides strong evidence for the double-acceptor nature of such impurities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337023
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Photoluminescence of InAs1−xSbx/AlSb single quantum wells: Transition from type-II to type-I band alignment (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8192-8194 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared photoluminescence has been used to study the band-gap energy of InAs1−xSbx digital superlattices and band alignment of InAs1−xSbx/AlSb quantum wells at 5 K. It is found that the InAs1−xSbx digital alloys have a smaller effective band gap than InAs1−xSbx random alloys. In addition, the valence band offset between type-II InAs/AlSb is determined to be 130 meV. This number reduces as the Sb mole fraction in InAs1−xSbx is increased, and the alignment between InAs1−xSbx/AlSb becomes type I when x〉0.15. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373517
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Optimum growth parameters for type-II infrared lasers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1796-1799 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface, structural, and optical properties of InAs/InGaSb/AlSb mid-infrared lasers grown by molecular beam epitaxy have been systematically studied, respectively, by Nomarski differential interference contrast, high-resolution x-ray diffraction, and variable-temperature photoluminescence. It is found that the optimum growth temperature is between 400 and 450 °C, based on the calibrated transmission thermometry. In addition, the impact of interfacial bond type and Sb sources has been investigated. A 5.91 μm laser, grown with the optimal growth parameters, exhibits a maximum cw operating temperature of 210 K. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370971
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Comment on "Native acceptor levels in Ga-rich GaAs'' [J. Appl. Phys. 65, 596 (1989)] (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7618-7619 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent results suggesting that 78-meV acceptors appear only in n-type material while 68-meV acceptors appear in p-type material are in direct conflict with several clear experiments which establish the existence of a 78-meV acceptor in p-type GaAs beyond any reasonable doubt. The available evidence for the 78-meV center is reviewed and some possible sources of error in DLTS and photoluminescence data are mentioned.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345803
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Studies of boron on the arsenic site in electron-irradiated GaAs (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5699-5702 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The introduction of boron on the arsenic site in gallium arsenide, as monitored by the strength of its local vibrational modes (LVM) at 601.7 and 628.3 cm−1, has been observed as a function of 2 MeV electron fluence. Simultaneous monitoring of the strength of the 1S-2P electronic transitions of the neutral shallow acceptors and of the neutral 78 meV acceptor and its singly ionized 203 meV level provides an accurate knowledge of the position of the Fermi level throughout most of the irradiation sequence. The results are inconsistent with previous models for the formation of boron on the arsenic site. We propose a model based on enhanced boron diffusion when the Fermi level lies above 78 meV. A compensation rate for electron irradiation, an introduction rate for the BAs center, and an infrared cross section for the BAs LVM are determined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340306
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Transport properties of Be- and Si-doped AlSb (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7876-7879 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thick epitaxial layers of AlSb(Si) and AlSb(Be) were grown by molecular beam epitaxy and characterized by variable-temperature Hall/van der Pauw measurements. Si is shown to be predominantly an acceptor in AlSb, with an energy level 33±4 meV above the top of the valence band. Be is also an acceptor, with an energy level 38±4 meV above the top of the valence band. Be is a robust doping source for p-AlSb for carrier densities ranging from 1015 to 1019 cm−3. Background impurity levels in AlSb can be assessed by measuring the transport properties of lightly doped AlSb(Be) layers. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373470
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Determination of temperature dependence of GaSb absorption edge and its application for transmission thermometry (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6632-6635 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission spectra of GaSb have been obtained over a temperature range from 10 to 470 °C. Using this information, transmission thermometry is applied to obtain accurate measurements of sample temperature during molecular beam epitaxy growth on GaSb substrates. A GaSb surface reconstruction transition is determined as a function of Sb flux and substrate temperature, establishing a laboratory-independent temperature standard. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370290
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Comment on: "The effect of charge state on the local vibrational mode absorption of the carbon acceptor in semi-insulating GaAs'' (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6731-6732 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A recent study of the effect of photoquenching of EL2 on the compensation of carbon acceptors in GaAs and the resulting effect on the carbon local vibrational mode, LVM, concluded that there was no broadening of the LVM associated with bound holes on neutral carbon acceptors. The failure to observe broadening of the LVM in this study was a result of the failure to neutralize a significant fraction of the carbon atoms by photoquenching EL2. We show that, in the experiment reported, at most only about 3%–4% of the carbon acceptors were neutralized. Such very small modifications of the ionized carbon concentration are unobservable in the LVM spectra unless the spectral stability and signal-to-noise ratio are exceptional.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348898
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...