ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The initial stage of formation of oxygen precipitates in silicon is investigated by deep-level transient spectroscopy, selective etching, and infrared spectrometry. It is established that the formation of oxygen precipitates at T a =600–960 °C is sustained by the emergence of local zones enriched with interstitial oxygen. As the anneal time is increased, these zones decrease in size, and the local oxygen concentration makes a transition to the SiO2 phase. Hydrostatic pressure applied in the nucleation stage leads to the formation of finer precipitates and accelerates the transition to the SiO2 phase.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187240
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