Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
70 (1991), S. 5420-5422
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
p,n Ga1−xAlxSb/GaSb heterojunctions obtained by liquid phase epitaxy, were studied by capacitance-voltage characterization and spectral photoresponse. It is shown that the band offsets of this system are ΔEc=0.14±0.03 eV and ΔEv=0.07±0.03 eV, in agreement with other work. This preliminary study is used to propose a variation law of the electron affinity as a function of the composition x.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.350199
Permalink
|
Location |
Call Number |
Expected |
Availability |