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  • 1
    Electronic Resource
    Electronic Resource
    Effect of ion energy on the optical and structural properties of SiO2 grown by plasma-enhanced chemical-vapor deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4707-4714 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical and structural properties of SiO2 films have been studied as a function of the energy of the ion bombardment applied during plasma-enhanced chemical-vapor deposition. The stress level, the degree of birefringence, and the type of microstructure on the surface and in the bulk showed systematic variations with energy. A theoretical model of the behavior of the stress developed in the layer during the deposition is compared to the experimental results. A second model developed to explain the birefringence enables the degree of columnar structure in the films to be estimated. The explanation for the variation of the refractive index with the ion energy requires the presence of a dense phase with refractive index greater than that of thermally grown SiO2. The volume fraction of the dense phase, and hence the film refractive index, is correlated with the magnitude of the compressive stress. Conditions of ion bombardment leading to optimum properties for our application were identified. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363428
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  • 2
    Electronic Resource
    Electronic Resource
    Structural investigation of two carbon nitride solids produced by cathodic arc deposition and nitrogen implantation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6914-6919 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon nitride materials have been the focus of research efforts worldwide. Most materials studied have been amorphous, with only a few groups claiming to have found a crystalline material. We investigate the structure of amorphous carbon nitride solids produced by two different techniques: cathodic arc deposition and high dose nitrogen implantation of glassy carbon. Transmission electron microscopy, electron energy loss spectroscopy, energy filtered electron diffraction, Rutherford backscattering, infrared, and Raman spectroscopy are all used to derive structural information. It was found that the carbon nitride materials prepared by both techniques have similar structures and [N]/[C] ratios (0.3). The materials appear to have a primarily sp2 bonded carbon structure with a smaller bond length than found in amorphous carbon. This is explained by nitrogen substituting into "rings'' to a saturation level of about one nitrogen per three carbon atoms. We have found no evidence for a C3N4 crystalline structure, nor any amorphous derivative of it. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361515
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  • 3
    Electronic Resource
    Electronic Resource
    The application of the cathodic arc to plasma assisted chemical vapor deposition of carbon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1563-1568 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article reports on the properties of hydrogenated carbon films deposited using a cathodic arc decomposition process with a graphite cathode used in a plasma assisted chemical vapor deposition mode. In this application of the cathodic arc, acetylene is broken down into radicals to form hydrogenated amorphous carbon films. Some results are also reported using hydrogen gas. The density in terms of plasmon energy or sp3 fraction of the films has been found to decrease with increasing acetylene or hydrogen flow rate, approaching the value for glow discharge deposited polymer-like hydrogenated amorphous carbon. When substrate bias is used, the hydrogen content is reduced and graphite microcrystals appear, together with cauliflower-like growths. In the range between 100 and 500 V, negative substrate bias increases the density of the films. Overall, the hydrogen content decreases with the density of the films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362649
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  • 4
    Electronic Resource
    Electronic Resource
    Properties of TiN films deposited at low temperature in a new plasma-based deposition system (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6279-6285 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stoichiometric titanium nitride (TiN) films were deposited at less than 130 °C in a new configuration of the helicon activated reactive evaporation system. An in situ ellipsometer was used to monitor the optical properties of the films during growth. The film stress, lattice parameter, surface roughness, crystallite size, and preferred orientation were investigated as a function of substrate bias and hence ion energy of the incident species. The intrinsic stress dependence on ion energy shows the expected result also shown by a variety of materials and is in good agreement with the theoretical model of Davis [Thin Solid Films 226, 30 (1993)]. The high stress level at −50 V bias is confirmed by measurement of lattice parameter. X-ray-diffraction measurements show that the (111)-preferred orientation normal to the substrate surface correlates strongly with the stress level of the films. By correlating our results with those from a number of other reported studies at higher substrate temperature we conclude that the observed preferred orientation in TiN films can be explained from the viewpoint of the energy minimization principle. Kinetic factors are of less importance except possibly at the highest bombardment energies. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363704
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  • 5
    Electronic Resource
    Electronic Resource
    Ion-assisted deposition of mixed TiO2-SiO2 films (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1805-1809 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mixed thin films of TiO2 and SiO2 were produced by coevaporation from separate electron-beam sources and simultaneous bombardment of the growing film with oxygen ions. The optical properties of the films were determined during growth by in situ ellipsometry and the surface composition of the deposited films studied by in situ ion scattering spectroscopy, ex situ x-ray photoelectron spectroscopy, and energy filtered electron diffraction. The correlation between the optical and surface characterization is presented. There is evidence of local variations in the relative concentrations of TiO2 and SiO2. The position of the Si 2p binding energy depends on the TiO2 content in the film, indicating the possible formation of an intimate mixture.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344352
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  • 6
    Electronic Resource
    Electronic Resource
    Cathode spot phenomena in titanium vacuum arcs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 505-512 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Investigations of cathode spot behavior on a titanium cathode in the presence of a variable magnetic field are presented. The cathode spot velocity as a function of magnetic field strength, arc current, and gas pressure has been determined using an optical technique, and the results have been compared with a number of available theories. The cathode spots have been investigated using a magnetic probe coil, and using both high-speed and conventional photography. The observations show that the motion of the spots is consistent with the presence of a positive space charge at the spot.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343566
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  • 7
    Electronic Resource
    Electronic Resource
    Optical properties of chemically ordered a-Si1−xCxB: H alloys (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1694-1698 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties (n,k,ε,neff) of chemically ordered a-Si1−xCx@B:H alloys have been measured and then analyzed with the effective-medium theory. Included is the first experimental result for an amorphous binary semiconductor that is known to be almost fully chemically ordered, and represented by the formula a-SiC0.64@B:H. Chemical order is induced by heavy dilution of the plasma with hydrogen. Chemical ordering shifts absorption to shorter wavelengths. Analysis using a scaling theory to define optical constants of different tetrahedron components leads to serious errors in the a-Si1−xCx@B:H series.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342940
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  • 8
    Electronic Resource
    Electronic Resource
    The structure and properties of ion-beam-synthesized boron nitride films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3980-3986 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Films containing boron and nitrogen were prepared by electron-beam evaporation of boron and bombardment of the growing film with nitrogen ions of energy up to 1500 eV. Hard films of high transparency (extinction coefficient 〈0.01) were prepared with nitrogen-to-boron atomic arrival ratios greater than one. The optical constants in the visible part of the spectrum were determined as a function of B-to-N atomic ratio in the film and substrate temperature using optical photometry. Measurements of the optical constants were extended to 40 eV using a Kramers–Kronig analysis of electron-energy-loss spectra. Boron-to-nitrogen atomic arrival rates were determined and show that as ion energy and substrate temperature are increased ion flux must be increased to achieve the same stoichiometry. Film structure was imaged using high-resolution electron microscopy, and the radial distribution function (RDF) was determined. The RDF of stoichiometric films showed that high substrate temperatures increased the size of the ordered regions. The RDF and high-resolution imaging of all films were consistent with the presence of the hexagonal form of BN with substoichiometric films containing amorphous boron as the other constituent. This conclusion is consistent with the analysis derived from the sum rule obtained from the optical constants. No evidence could be found for the cubic form of BN.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341357
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  • 9
    Electronic Resource
    Electronic Resource
    Growth dynamics of aluminum nitride and aluminum oxide thin films synthesized by ion-assisted deposition (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 760-769 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Some aspects of the dynamics of thin-film synthesis of aluminum nitride and aluminum oxide produced by ion-assisted deposition have been deduced from in situ measurements by ellipsometry, photometry, and ion scattering spectroscopy. Measurements obtained during the etching of aluminum films by nitrogen and oxygen ion beams have established the thickness of the synthesized layer and the rate of compound formation. Some of these measurements have been compared with a theoretical model which predicts the time evolution of the synthesized surface layer as well as the steady-state layer thickness. The breakdown voltage and variation of capacitance with applied voltage of aluminum oxide films prepared by ion-assisted deposition are also presented. Furthermore, the optical properties of ion-assisted AlN and Al2O3 in the visible region are given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340068
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  • 10
    Electronic Resource
    Electronic Resource
    Metal ion implantation using a filtered cathodic vacuum arc (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4198-4204 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: When plasma immersion ion implantation is performed in the condensable plasma stream produced by a cathodic vacuum arc, deposition as well as implantation usually occurs. In this article we describe a method of achieving pure implantation by orienting the substrate so that it is shadowed from the plasma beam. Implantation depth profiles measured in glassy carbon and CR39 polymer using Rutherford backscattering are compared to illustrate the effectiveness of the technique for conducting and insulating substrates. Charging of the insulating substrate was found to cause a reduction in implantation depth compared to a conducting substrate. The depth profiles in glassy carbon were comparable to those achieved by conventional extracted ion beam implantation. Implantation of magnesium into hydroxyapatite and alumina was carried out to improve the bone cell adhesion onto these materials for prosthetic applications. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373052
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