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  • 1
    Electronic Resource
    Electronic Resource
    Influence of domain size on optical properties of ordered GaInP2 (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2633-2639 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using dark-field transmission electron microscopy images of ordered GaInP samples, we show how the ordering domain size depends on the growth temperature. Samples with different average domain sizes are compared with regard to their photoluminescence (PL) and excitation spectra. We find a close correlation between the size of the ordered domains and the relative intensity of the PL peak from band–band recombination compared with the rapidly shifting, below-band-gap luminescence emission. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361099
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  • 2
    Electronic Resource
    Electronic Resource
    Determination of free carrier concentration in n-GaInP alloy by Raman scattering (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2515-2519 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present results of Raman scattering from coupled phonon-plasmon modes in Se-doped n-Ga0.52In048P alloy. Due to the small energy separation between the Γ- and the L-point conduction-band minima for this alloy composition, a significant fraction of the free carriers at room temperature are present in the L-conduction-band valley, giving rise to a multicomponent plasma. The carrier concentrations extracted from the Raman spectra for the different epilayers are in good agreement with the free electron concentrations determined by capacitance-voltage measurements. We employ the light scattering technique to extract the carrier concentration in the n-type emitter layer of a GaInP-based solar cell. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360715
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of strain, substrate misorientation, and excitonic transition on the optical polarization of ordered zinc-blende semiconductor alloys (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6365-6373 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical polarization in ordered GaInP2 alloys has been studied by low-temperature photoluminescence. A perturbative theory that includes the effects of lattice mismatch, substrate misorientation, and excitonic transitions has been developed for making quantitative comparisons between experimental results and theoretical predictions. We show that to obtain quantitative information about ordering from the polarization of near-band-gap transitions, all of the above-mentioned effects should be taken into account. This study demonstrates that the electronic and optical properties of a monolayer superlattice formed by partial ordering in the GaInP2 alloy can be well described by a simple perturbative Hamiltonian, i.e., a quasicubic model. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364390
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetoluminescence study on the effective mass anisotropy of CuPtB-ordered GaInP2 alloys (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2814-2817 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence measurements in a magnetic field between 0 and 13.6 T were carried out on CuPtB-ordered GaInP at liquid-helium temperature. Four samples of different degrees of ordering (η, varying from 0 to 0.54) were studied. Experimental results show that the ordering not only induces a band-gap reduction and valence-band splitting, it also causes changes in effective masses and an effective mass anisotropy. By measuring and analyzing the magnetoluminescence with the magnetic field aligned along both ordering (the [1¯11]) and growth (the [001]) directions, we demonstrate that, for the band-edge excitonic state, the reduced mass in the plane perpendicular to the ordering direction is smaller than that in the ordering direction and also smaller than that of a disordered alloy. The exciton binding energy is found nearly independent of the degree of ordering, in agreement with theoretical predictions. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363938
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  • 5
    Electronic Resource
    Electronic Resource
    Laterally modulated composition profiles in AlAs/InAs short-period superlattices (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6088-6094 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laterally modulated composition profiles in AlAs/InAs short-period superlattices grown by molecular-beam epitaxy under tensile strain on (001) InP are examined by transmission electron microscopy (TEM) and x-ray diffraction K mapping. Weak, one-dimensional modulation with a wavelength of λm=110 Å is observed for a period of 1 ML. At 2 ML, the composition profile is irregular, while a two-dimensional network of wire and dot structures with λm=130 Å occurs at 3 ML. At a high growth rate, 4-ML samples exhibit smooth modulated profiles with λm=220 Å. When the growth rate is reduced with beam interrupts, sharp profiles develop that show strong alignment in the substrate plane with λm=270 Å. TEM dark-field image contrast of the modulated profiles is simulated using dynamical diffraction theory to reproduce features observed in experiment. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368921
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of microstructure on excitonic luminescence of spontaneously ordered Ga0.52In0.48P alloys (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5418-5420 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We compare the results of low-temperature (4.2 K) microphotoluminescence (PL) measurements on cleaved edges of spontaneously ordered GaInP2 alloy samples with the results of cross-section transmission electron microscopy (TEM). The TEM dark-field images show that the size of ordered domains grows as the deposition progresses. The excitonic luminescence peak in the micro-PL spectra of GaInP2 is stronger near the surface of the thin film than near the substrate. From these results, we conclude that there is a direct correlation between the domain size or alternatively, the density of domain boundaries, and the relative strength of the excitonic peak. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367371
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  • 7
    Electronic Resource
    Electronic Resource
    Magnetoexcitons in anisotropic semiconductors (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 448-454 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a numerical technique, we have calculated the exciton ground state in a uniaxially anisotropic semiconductor with and without the presence of a magnetic field. Numerical results are given for the exciton energy level as a function of magnetic field for a wide range of anisotropy parameters 0.001≤αβ≤1000 and effective field 0≤γ≤10. We have demonstrated that by fitting the experimental data of the field dependence, in a proper field range, with the field aligned in the direction of the uniaxis, the exciton in plane reduced mass μ⊥ and the parameter αβ can be obtained simultaneously. As an example, magnetoluminescence of ordered GaInP2 measured in the field range B≤14 T is analyzed by applying this method. Analytical formulas have been found for calculating exciton binding energy and the related variational parameters for a well-known method with trial function f(x,y,z)=(πa2b)−1 exp[−(x2+y2)/a2+z2/b2]. Various approximate approaches for calculating the exciton binding energy and the magnetoexciton states are discussed and compared. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366659
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  • 8
    Electronic Resource
    Electronic Resource
    Raman spectroscopic investigation of superconducting YBa2Cu3O7−x, semiconducting YBa2Cu3O6+x, and possible impurity phases (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 242-243 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Raman spectroscopic investigation of specimens of superconducting YBa2Cu3O7−x and of the possible impurity phases YBa2Cu3O6+x (semiconductor), Y2BaCuO5, Y2Cu2O5, BaCuO2, CuO, Y2O3, and BaCO3 indicates that in the range 100–700 cm−1, there are six characteristic lines belonging to the superconductor. At 13 K, these lines are at 150, 338, 441, 507, 590, and 644 cm−1. Comparison of the Raman spectra of the superconductor and the semiconductor indicates a mode stiffening of the pair at 338 and 441 cm−1, but a mode softening of the pair at 507 and 590 cm−1. A factor group analysis leads to a tentative assignment of the Raman and infrared allowed modes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99651
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  • 9
    Electronic Resource
    Electronic Resource
    Low-temperature cleaved-edge polarized-photoluminescence studies of spontaneously ordered GaInP2 alloys (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1773-1775 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report low-temperature polarized-photoluminescence (PL) measurements on (110) cleaved edges of ordered GaInP2 alloys. By comparing the intensity of the forbidden PL polarized along the ordering axis with that of the allowed PL polarized orthogonal to the ordering axis, we study the effect of coulomb interaction on the excitonic transition rate. The experimentally obtained polarization ratios of 13–20 are consistent with calculations based on an eight-band k⋅p model. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366898
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  • 10
    Electronic Resource
    Electronic Resource
    The effect of excitons on CdTe solar cells (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8786-8792 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature and doping-level dependence of CdTe solar cells is investigated, taking into account the involvement of excitons on photocurrent transport. We show that the density of excitons in CdTe is comparable with that of minority carriers at doping levels ≥1015 cm−3. From the investigation of the dark-saturation current, we show that the product of electron and hole concentrations at equilibrium is several orders of magnitude more than the square of the intrinsic carrier concentration. With this assumption, we have studied the effect of excitons on CdTe solar cells, and the effect is negative. CdTe solar cell performance with excitons included agrees well with existing experimental results. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373611
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