Publication Date:
2011-03-19
Description:
Author(s): N. Sircar, S. Ahlers, C. Majer, G. Abstreiter, and D. Bougeard We present evidence that electrical transport studies of epitaxial p-type GeMn thin films fabricated on high-resistivity Ge substrates are severely influenced by parallel conduction through the substrate, related to the large intrinsic conductivity of Ge due to its small band gap. Anomalous Hall mea... [Phys. Rev. B 83, 125306] Published Fri Mar 18, 2011
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
Permalink